Loading...

N02L83W2AN25IT

Onsemi

N02L83W2AN25IT by Onsemi

N02L83W2AN25IT by Onsemi is a 256Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline, thin profile package and operates in industrial temperature range. Ideal for applications requiring fast access times and low standby current.

Median Price

$1.940

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$1.830

1k+ parts

$1.640

10k+ parts

$1.540

4,000

-

$1.830

$1.640

$1.540

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.050

10k+ parts

-

4,000

-

-

$2.050

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,224 parts In-Stock

1+ parts

$1.938

100+ parts

-

1k+ parts

-

10k+ parts

-

2,224

$1.938

-

-

-

Vyrian

USA . 5,082 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,082

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 84 parts In-Stock

1+ parts

$1.750

100+ parts

-

1k+ parts

-

10k+ parts

-

84

$1.750

-

-

-

Corphita

USA . 149 parts In-Stock

1+ parts

$1.836

100+ parts

-

1k+ parts

-

10k+ parts

-

149

$1.836

-

-

-

Component Stockers USA

USA . 5,400 parts In-Stock

1+ parts

$2.100

100+ parts

$1.970

1k+ parts

$1.780

10k+ parts

-

5,400

$2.100

$1.970

$1.780

-

AZTECH Wire

Italy . 89 parts In-Stock

1+ parts

$16.960

100+ parts

-

1k+ parts

-

10k+ parts

-

89

$16.960

-

-

-

TANS Electronics

Latvia . 4,789 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,789

-

-

-

-

Continental Prestige Electronics

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$2.480

1k+ parts

-

10k+ parts

-

4,000

-

$2.480

-

-

SupplyDigital Components

Austria . 3,064 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,064

-

-

-

-

Problanco Electronics

Mexico . 2,501 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,501

-

-

-

-

Kulean Microsystems

USA . 882 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

882

-

-

-

-

Microchip USA

USA . 379 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

379

-

-

-

-

UHIMA Technologies

Türkiye . 93 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

93

-

-

-

-

Overview

Enhance your electronic projects with the N02L83W2AN25IT by Onsemi, a top-quality SRAM memory chip that promises reliability and efficiency. Manufactured by Onsemi, a trusted name in the industry, this memory chip offers seamless integration into various applications, thanks to its common input/output type and asynchronous operating mode. With a small outline and thin profile package style, this chip is perfect for space-constrained designs. Experience fast access times and low power consumption, making it ideal for industrial-grade projects. Upgrade your systems with the N02L83W2AN25IT and enjoy superior performance and value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness for the product.

Surface Mount: YES

Ease of installation and space-saving on the circuit board.

Operating Mode: ASYNCHRONOUS

Allows for independent operation and flexibility in data access.

Nominal Supply Voltage / Vsup (V): 3

Compatibility with common voltage requirements in many electronic systems.

No. of Words: 262144 words

High memory capacity for storing a large amount of data.

Maximum Access Time: 70 ns

Fast data retrieval for efficient performance.

Technical Specifications

SRAM N02L83W2AN25IT attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

Length:

11.8 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.56,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

16 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

8 mm

Trade Compliance

N02L83W2AN25IT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20