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N02L63W3AB25I

Onsemi

N02L63W3AB25I by Onsemi

N02L63W3AB25I by Onsemi is a 128Kx16 SRAM with 70ns access time, operating at 2.5/3.3V. It features a low profile grid array package and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.

Median Price

$2.490

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,103 parts In-Stock

1+ parts

-

100+ parts

$2.150

1k+ parts

$1.920

10k+ parts

$1.810

3,103

-

$2.150

$1.920

$1.810

DigiKey

USA . 480 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.490

10k+ parts

-

480

-

-

$2.490

-

Verical

USA . 480 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.688

10k+ parts

-

480

-

-

$2.688

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 113 parts In-Stock

1+ parts

$2.270

100+ parts

-

1k+ parts

-

10k+ parts

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113

$2.270

-

-

-

Vyrian

USA . 3,877 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,877

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-

-

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DigiKey Marketplace

USA . 480 parts In-Stock

1+ parts

-

100+ parts

$2.490

1k+ parts

-

10k+ parts

-

480

-

$2.490

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 500 parts In-Stock

1+ parts

$2.050

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$2.050

-

-

-

Corphita

USA . 583 parts In-Stock

1+ parts

$2.151

100+ parts

-

1k+ parts

-

10k+ parts

-

583

$2.151

-

-

-

Component Stockers USA

USA . 692 parts In-Stock

1+ parts

$2.460

100+ parts

$2.310

1k+ parts

$2.090

10k+ parts

-

692

$2.460

$2.310

$2.090

-

QUARKTWIN TECHNOLOGY LTD

USA . 22,659 parts In-Stock

1+ parts

-

100+ parts

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22,659

-

-

-

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Problanco Electronics

Mexico . 8,215 parts In-Stock

1+ parts

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8,215

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-

-

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SupplyDigital Components

Austria . 5,394 parts In-Stock

1+ parts

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5,394

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Microchip USA

USA . 3,359 parts In-Stock

1+ parts

-

100+ parts

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3,359

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Continental Prestige Electronics

USA . 3,103 parts In-Stock

1+ parts

-

100+ parts

$2.910

1k+ parts

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10k+ parts

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3,103

-

$2.910

-

-

Kulean Microsystems

USA . 2,541 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,541

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-

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UHIMA Technologies

Türkiye . 485 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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485

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-

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TANS Electronics

Latvia . 324 parts In-Stock

1+ parts

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324

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-

Overview

Unlock unparalleled performance and reliability with the N02L63W3AB25I by Onsemi. As a leading manufacturer in the industry, Onsemi consistently delivers top-notch quality products like this SRAM module. Ideal for industrial applications, this memory IC offers a seamless experience with its common input/output type and 3-state output characteristics. Enjoy the benefits of fast access times, low power consumption, and a wide operating temperature range. Elevate your projects with Onsemi's innovative technology and trust in the exceptional value that the N02L63W3AB25I brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and helps protect the internal components of the SRAM.

Surface Mount: YES

Surface mount capability makes it easy to integrate this SRAM into electronic circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient data retrieval and storage.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard supply voltage of 3V, compatible with many systems.

Memory Density: 2097152 bit

With a high memory density, this SRAM can store a large amount of data efficiently.

Technical Specifications

SRAM N02L63W3AB25I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

Length:

8 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.34 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

16 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

N02L63W3AB25I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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