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N01L83W2AN25I

Onsemi

N01L83W2AN25I by Onsemi

N01L83W2AN25I by Onsemi is a 128Kx8 SRAM with 3.6V max supply voltage, operating at -40 to 85 °C. It features a small outline package, 0.5mm terminal pitch, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact spaces.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,827 parts In-Stock

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Digiode

USA . 1,286 parts In-Stock

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AZTECH Wire

Italy . 1,172 parts In-Stock

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$16.830

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Component Stockers USA

USA . 246 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 7,316 parts In-Stock

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SupplyDigital Components

Austria . 6,945 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 4,766 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,592 parts In-Stock

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Kepictronics

USA . 2,106 parts In-Stock

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Corphita

USA . 1,332 parts In-Stock

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UHIMA Technologies

Türkiye . 771 parts In-Stock

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Corohmni

South Africa . 202 parts In-Stock

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Microchip USA

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TANS Electronics

Latvia . 47 parts In-Stock

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Overview

Discover unparalleled performance and reliability with the N01L83W2AN25I by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and innovation in every product they create. The N01L83W2AN25I belongs to the SRAM category, offering fast and efficient data storage solutions for various applications. With a nominal supply voltage of 3V and a compact package style, this memory IC provides seamless operation and ease of integration. Elevate your projects with the superior benefits and value that the N01L83W2AN25I brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the SRAM, making it suitable for a variety of environments.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, saving space and simplifying the assembly process.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for fast and independent access to memory locations, improving overall performance and efficiency.

Nominal Supply Voltage / Vsup (V): 3

Operating at a 3V nominal supply voltage ensures compatibility with standard power sources and reduces power consumption.

No. of Terminals: 32

With 32 terminals, this SRAM offers numerous connection points for integration into complex electronic systems.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliability and performance in challenging thermal conditions.

Memory Density: 1048576 bit

With a high memory density of 1048576 bits, this SRAM offers ample storage capacity for data-intensive applications.

Maximum Access Time: 70 ns

The fast maximum access time of 70 nanoseconds allows for quick read and write operations, enhancing overall system responsiveness.

Technical Specifications

SRAM N01L83W2AN25I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

Length:

11.8 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.56,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

14 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

8 mm

Trade Compliance

N01L83W2AN25I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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