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IDT70V25L25PFGI8

Renesas Electronics

IDT70V25L25PFGI8 by Renesas Electronics

The Renesas Electronics IDT70V25L25PFGI8 is an 8Kx16 MULTI-PORT SRAM with a 25 ns max access time. Operating at 3.3V, it features a memory density of 131072 bit and is ideal for industrial applications requiring fast parallel data processing in a compact FLATPACK package.

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Vyrian

USA . 774 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Corohmni

South Africa . 204 parts In-Stock

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$4.083

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AZTECH Wire

Italy . 774 parts In-Stock

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$9.665

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Ampacity Inc.

Singapore . 1,308 parts In-Stock

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$20.000

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Argo Parts USA

USA . 1,151 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Continental Prestige Electronics

USA . 673 parts In-Stock

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Overview

Experience unparalleled speed and reliability with the IDT70V25L25PFGI8 by Renesas Electronics. As a leading manufacturer in the industry, Renesas Electronics delivers exceptional quality and performance. This SRAM device is perfect for a wide range of applications, offering customers seamless operation and advanced functionality. Trust in Renesas Electronics to provide innovative solutions that enhance your products and elevate your business to new heights. Unlock the full potential of your designs with the IDT70V25L25PFGI8.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the SRAM, making it a reliable choice for various applications.

Surface Mount: YES

This SRAM can be easily mounted on circuit boards, allowing for efficient and space-saving integration into electronic devices.

Package Shape: SQUARE

The square package shape offers a compact design, ideal for applications where space is limited.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent access to memory locations, enhancing the overall efficiency of data retrieval.

Nominal Supply Voltage / Vsup (V): 3.3

The low nominal supply voltage of 3.3V makes this SRAM energy-efficient and suitable for battery-powered devices.

No. of Terminals: 100

With a high number of terminals, this SRAM offers enhanced connectivity options, ensuring seamless integration into complex systems.

Package Style (Meter): FLATPACK, LOW PROFILE, FINE PITCH

The flatpack, low profile, and fine pitch package style makes this SRAM suitable for compact applications where space optimization is crucial.

Maximum Operating Temperature: 85 °C

The SRAM can operate efficiently at high temperatures up to 85°C, ensuring reliability in various environmental conditions.

Organization: 8KX16

The 8Kx16 organization of this SRAM provides a balance between memory capacity and data width, offering versatility for different data processing requirements.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this SRAM is suitable for use in extreme cold environments without compromising performance.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers corrosion resistance and ensures a stable electrical connection, making the SRAM ideal for long-term use.

Terminal Position: QUAD

The quad terminal position allows for easy installation and connection, simplifying the assembly process for system integration.

Maximum Seated Height: 1.6 mm

The low maximum seated height of 1.6mm enables a slim profile for the SRAM, making it suitable for compact electronic devices.

Width: 14 mm

The 14mm width of the SRAM contributes to its compact design, making it a good choice for applications with limited space.

Minimum Supply Voltage (Vsup): 3 V

The minimum supply voltage of 3V ensures compatibility with a wide range of power sources, making this SRAM versatile and easy to integrate.

Length: 14 mm

The 14mm length of the SRAM complements its compact width, providing a space-efficient solution for electronic applications.

Temperature Grade: INDUSTRIAL

The industrial temperature grade certification ensures that this SRAM is suitable for use in rugged industrial environments, making it a reliable choice for demanding applications.

Technology: CMOS

The CMOS technology used in this SRAM offers low power consumption and high-speed operation, making it energy-efficient and fast for data processing tasks.

Parallel or Serial: PARALLEL

The parallel data processing mode allows for simultaneous access to memory locations, enhancing the overall speed and efficiency of data retrieval.

Terminal Form: GULL WING

The gull wing terminal form provides a strong connection and allows for easy soldering, ensuring a secure attachment to the circuit board.

No. of Words: 8192 words

With a high number of words, this SRAM offers ample storage capacity for data processing tasks, making it suitable for applications with large memory requirements.

Memory Width: 16

The 16-bit memory width of this SRAM allows for efficient data transfer and processing, enhancing the overall performance of the device.

Terminal Pitch: 0.5 mm

The 0.5mm terminal pitch offers precise alignment and connection, ensuring reliable data transmission and integration into circuit boards.

No. of Words Code: 8

The 8K words code provides a specific memory size designation, making it easy to identify and select the appropriate SRAM for a particular application.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, this SRAM is resistant to moisture damage, ensuring long-term reliability in humid environments.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V allows for a wide voltage range, providing flexibility in powering the SRAM for various applications.

Memory Density: 131072 bit

The high memory density of 131072 bits offers ample storage capacity for data-intensive applications, making this SRAM suitable for tasks that require large memory storage.

Memory IC Type: MULTI-PORT SRAM

The multi-port SRAM design allows for multiple data access points simultaneously, improving data processing efficiency and speed.

Maximum Access Time: 25 ns

With a fast maximum access time of 25 nanoseconds, this SRAM can rapidly retrieve data, making it ideal for applications requiring quick response times.

Technical Specifications

SRAM IDT70V25L25PFGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

25 ns

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

100

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

IDT70V25L25PFGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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