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71024S25TYGI8

Integrated Device Technology

71024S25TYGI8 by Integrated Device Technology

STANDARD SRAM; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,844 parts In-Stock

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VNN

France . 3,705 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$3.737

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$3.700

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$3.551

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AZTECH Wire

Italy . 266 parts In-Stock

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$16.007

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Ampacity Inc.

Singapore . 458 parts In-Stock

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Continental Prestige Electronics

USA . 6,927 parts In-Stock

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Argo Parts USA

USA . 3,430 parts In-Stock

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Microchip USA

USA . 410 parts In-Stock

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Bastille Electronics

Australia . 71 parts In-Stock

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Technical Specifications

SRAM 71024S25TYGI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

JESD-609 Code:

e3

Memory IC Type:

Moisture Sensitivity Level (MSL):

3

Peak Reflow Temperature (C):

260

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

71024S25TYGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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