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M68AF031AL55N1F

STMicroelectronics

M68AF031AL55N1F by STMicroelectronics

M68AF031AL55N1F by STMicroelectronics is a 32Kx8 CMOS SRAM with a max access time of 55 ns and operates at a nominal voltage of 5V. It features a compact SOIC package, ideal for space-constrained applications. This asynchronous memory is perfect for high-speed data storage in consumer electronics.

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 516 parts In-Stock

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Anansix

USA . 336 parts In-Stock

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Digiode

USA . 273 parts In-Stock

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IDEA Electronic Components Group

UK . 785 parts In-Stock

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$5.410

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$4.869

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785

$5.410

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MKK Technologies

India . 4 parts In-Stock

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$10.172

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DigiPath Technology Company

USA . 4 parts In-Stock

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$10.172

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Corphita

USA . 3,566 parts In-Stock

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Parana Technologies

USA . 154 parts In-Stock

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$6.468

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Overview

Elevate your designs with the M68AF031AL55N1F SRAM from STMicroelectronics, a leader in high-quality semiconductor solutions. This compact and efficient memory chip offers exceptional performance for diverse applications—from consumer electronics to industrial automation. Enjoy faster response times, lower power consumption, and reliable operation even in demanding environments. Trust in STMicroelectronics for innovation and quality that enhances your projects and drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection against environmental factors, making the SRAM reliable in various applications.

Surface Mount: YES

Surface mount technology allows for compact design and efficient use of PCB space, suitable for modern electronics.

Package Shape: RECTANGULAR

The rectangular shape enhances layout efficiency on circuit boards, facilitating better design flexibility.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster response times without the need for a clock signal, improving performance in specific use cases.

Input/Output Type: COMMON

A common I/O type simplifies design and integration with other components in a system.

Nominal Supply Voltage / Vsup: 5V

Operating at a nominal 5V makes this SRAM easily compatible with many standard logic levels in electronics.

Power Supplies (V): 5V

This single power supply requirement reduces design complexity and manufacturing costs.

No. of Terminals: 28

28 terminals provide sufficient connectivity for memory access while maintaining a compact form factor.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The thin profile allows for use in tight spaces and reduces overall device weight.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliability under moderate thermal conditions.

Organization: 32KX8

This organization provides a good balance of memory density and access speed, making it effective for various applications.

Output Characteristics: 3-STATE

3-state output allows for multiple devices to share the same output line, enhancing circuit design flexibility.

Minimum Standby Voltage: 2V

A low standby voltage requirement contributes to power efficiency in battery-operated applications.

Minimum Operating Temperature: 0 °C

Suitable for a variety of environments, as it can operate in temperatures as low as 0 °C.

Terminal Finish: TIN/TIN BISMUTH

The tin/tin bismuth finish provides good solderability and prevents corrosion, ensuring long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for more versatile mounting options on circuit boards.

Maximum Seated Height: 1.2 mm

A low seated height allows for compact designs while conforming to space constraints.

Width: 8 mm

The compact width is advantageous for space-sensitive applications.

Minimum Supply Voltage (Vsup): 4.5V

Operates effectively within a range of voltages, ensuring compatibility with various systems.

Peak Reflow Temperature: 260 °C

High peak reflow temperature capability makes it suitable for modern manufacturing processes.

Length: 11.8 mm

A compact length contributes to reduced footprint on circuit boards, beneficial for small electronic devices.

Temperature Grade: COMMERCIAL

Commercial temperature grading opens usage in everyday electronics, balancing performance and cost.

Technology: CMOS

CMOS technology provides low power consumption and high-speed operation, making this SRAM efficient.

Parallel or Serial: PARALLEL

Parallel processing capabilities support faster data access compared to serial interfaces, enhancing performance.

Terminal Form: GULL WING

Gull wing terminals allow for easier soldering and better placement accuracy during assembly.

Maximum Supply Current: 50 mA

A maximum supply current of 50 mA ensures adequate power for reliable memory access without overheating.

No. of Words: 32768 words

With a capacity of 32K words, this SRAM is well-suited for a variety of data-heavy applications.

Memory Width: 8

An 8-bit memory width strikes a good balance between speed and data handling capabilities in most applications.

Terminal Pitch: 0.55 mm

A 0.55 mm terminal pitch allows for denser packaging of components on PCBs without sacrificing performance.

No. of Words Code: 32K

The 32K words coding reinforces the product's memory capabilities, beneficial for various CPU architectures.

Maximum Supply Voltage (Vsup): 5.5V

The maximum supply voltage of 5.5V ensures that it can work safely in more robust environments.

Memory Density: 262144 bit

A high memory density of 262144 bits supports more complex applications, providing significant data storage.

Memory IC Type: STANDARD SRAM

As a standard SRAM type, it guarantees compatibility with a wide variety of systems and applications.

Maximum Standby Current: 0.000006 Amp

A very low standby current helps in minimizing power consumption, making it ideal for energy-efficient designs.

Maximum Access Time: 55 ns

An access time of 55 ns allows for quick data retrieval, enhancing the performance of time-sensitive applications.

Technical Specifications

SRAM M68AF031AL55N1F attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e3/e6

Length:

11.8 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP28,.53,22

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.55 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8 mm

Trade Compliance

M68AF031AL55N1F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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