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M68AF031AL55B6

STMicroelectronics

M68AF031AL55B6 by STMicroelectronics

M68AF031AL55B6 from STMicroelectronics is a 32Kx8 asynchronous SRAM with a max access time of 55 ns. It operates at a nominal voltage of 5V and supports industrial temperature ranges (-40 °C to 85 °C). Ideal for applications requiring fast, reliable memory in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,076 parts In-Stock

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2,076

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Anansix

USA . 1,628 parts In-Stock

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1,628

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Vyrian

USA . 1,529 parts In-Stock

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1,529

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,900 parts In-Stock

1+ parts

$4.108

100+ parts

-

1k+ parts

$3.697

10k+ parts

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1,900

$4.108

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$3.697

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MKK Technologies

India . 1,944 parts In-Stock

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$7.724

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$7.724

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DigiPath Technology Company

USA . 1,944 parts In-Stock

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$7.724

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1,944

$7.724

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Corphita

USA . 4,506 parts In-Stock

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4,506

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Parana Technologies

USA . 503 parts In-Stock

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$4.912

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503

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$4.912

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Overview

Elevate your designs with the M68AF031AL55B6 SRAM from STMicroelectronics, a leader in high-quality semiconductor solutions. This robust memory chip offers unparalleled reliability and efficiency for a wide range of applications, from industrial automation to telecommunications. With its asynchronous operation and dual-terminal design, you can expect optimal performance and effortless integration. Trust STMicroelectronics to deliver top-notch technology that drives innovation while enhancing the value and longevity of your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection against environmental factors, making it suitable for various applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on circuit boards, facilitating easier integration into designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for immediate data access without the need for external clock signals, simplifying system design.

Input/Output Type: COMMON

A common I/O type streamlines connection requirements and enhances compatibility with various circuit configurations.

Nominal Supply Voltage / Vsup: 5 V

The standard supply voltage of 5V is widely used in many electronic systems, simplifying power supply needs.

Power Supplies: 5 V

Using 5V power supplies ensures compatibility with many existing components and reduces design complexity.

No. of Terminals: 28

With 28 terminals, it offers ample connectivity for versatile integration into various electronic applications.

Package Style (Meter): IN-LINE

In-line packaging provides a streamlined profile, allowing for easy assembly and placement on printed circuit boards.

Maximum Operating Temperature: 85 °C

An operational limit of 85 °C ensures reliability in high-temperature environments, making it suitable for industrial applications.

Organization: 32KX8

This organization allows for efficient data storage and retrieval, highlighting the memory's capability to handle substantial data.

Output Characteristics: 3-STATE

3-State output enables multiple devices to be connected on the same bus, reducing contention and improving design flexibility.

Minimum Standby Voltage: 2 V

The low minimum standby voltage ensures operation even in low-power scenarios, enhancing energy efficiency.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, it is well-suited for extreme conditions, ensuring reliability in harsh environments.

Terminal Finish: MATTE TIN

Matte tin finish minimizes oxidation, enhancing stability and conductivity, leading to improved performance.

Terminal Position: DUAL

Dual terminal positioning allows for versatile mounting options, accommodating various circuit board designs.

Maximum Seated Height: 5.08 mm

A seated height of 5.08 mm allows for low-profile designs, fitting into compact electronic devices.

Width: 15.24 mm

At 15.24 mm wide, it strikes a balance between size and performance, fitting well into various applications.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage of 4.5V enhances its versatility and allows for operation in a range of systems.

Length: 37.085 mm

The length of 37.085 mm provides a compact solution for memory needs without sacrificing performance.

Temperature Grade: INDUSTRIAL

Industrial temperature grading guarantees performance in demanding conditions, making it ideal for harsh environments.

Technology: CMOS

CMOS technology ensures low power consumption while providing high speed and good noise immunity.

Parallel or Serial: PARALLEL

Parallel access facilitates faster read/write speeds, making it suitable for applications requiring quick data transfer.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust physical support and are particularly advantageous for heavy-duty applications.

Maximum Supply Current: 50 mA

A maximum supply current of 50 mA allows for efficient power management while meeting operational demands.

No. of Words: 32768 words

With a capacity of 32,768 words, it supports substantial data storage, accommodating a variety of applications.

Memory Width: 8

An 8-bit memory width enables efficient data handling for most common processing applications.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54 mm ensures compatibility with standard PCB designs, facilitating easy integration.

No. of Words Code: 32K

The 32K word code denotes a high-capacity memory, allowing for extensive data storage and flexibility.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V offers a margin for variability, ensuring stable operation under changing conditions.

Memory Density: 262144 bit

A memory density of 262,144 bits indicates substantial storage capabilities, making it appropriate for complex tasks.

Memory IC Type: STANDARD SRAM

Being a standard SRAM type ensures compatibility with a wide array of existing systems and solutions.

Maximum Standby Current: 0.000006 Amp

A low maximum standby current ensures energy efficiency, prolonging battery life in portable electronics.

Maximum Access Time: 55 ns

With a maximum access time of 55 ns, this SRAM offers fast data retrieval, enhancing overall system performance.

Technical Specifications

SRAM M68AF031AL55B6 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T28

JESD-609 Code:

e3

Length:

37.085 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M68AF031AL55B6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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