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M68AF031AL55N6E

STMicroelectronics

M68AF031AL55N6E by STMicroelectronics

M68AF031AL55N6E from STMicroelectronics is a 32Kx8 asynchronous SRAM with a 5V supply, ideal for industrial applications. It features a max access time of 55 ns and operates in temperatures from -40 °C to 85 °C. Its compact SOIC package ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,466 parts In-Stock

1+ parts

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3,466

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Anansix

USA . 2,025 parts In-Stock

1+ parts

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2,025

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Digiode

USA . 1,303 parts In-Stock

1+ parts

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1,303

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 282 parts In-Stock

1+ parts

$1.949

100+ parts

-

1k+ parts

$1.755

10k+ parts

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282

$1.949

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$1.755

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MKK Technologies

India . 50 parts In-Stock

1+ parts

$3.666

100+ parts

-

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50

$3.666

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DigiPath Technology Company

USA . 50 parts In-Stock

1+ parts

$3.666

100+ parts

-

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50

$3.666

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Corphita

USA . 4,688 parts In-Stock

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4,688

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Parana Technologies

USA . 1,554 parts In-Stock

1+ parts

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100+ parts

$2.331

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1,554

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$2.331

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Overview

Unlock exceptional performance with the M68AF031AL55N6E SRAM from STMicroelectronics! Renowned for its superior quality and reliability, STMicroelectronics delivers cutting-edge memory solutions perfect for high-speed applications in industrial and consumer electronics. With a robust design that thrives under extreme conditions, this SRAM guarantees efficiency and stability, empowering your projects with swift data access and low power consumption. Elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body ensures durability and resistance to environmental factors, which is ideal for industrial applications.

Surface Mount: YES

Surface mount technology allows for a smaller footprint, enabling more efficient use of PCB space and facilitating automated assembly.

Package Shape: RECTANGULAR

A rectangular package shape is standard and compatible with common PCB layouts, making integration easier.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides faster access times, enhancing the overall performance of systems requiring quick data retrieval.

Input/Output Type: COMMON

Common I/O helps in simplifying the circuit design, making it easier to interface with other devices.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V is standard, ensuring compatibility with a wide range of systems and reducing design complexity.

Power Supplies (V): 5

This power supply specification ensures that the SRAM operates efficiently with minimal power fluctuations.

No. of Terminals: 28

28 terminals provide versatile connection options, allowing for integration into various circuit designs.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline thin profile design contributes to space efficiency in compact electronic devices.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C ensures reliable performance in industrial environments with higher thermal demands.

Organization: 32KX8

This organization allows for easy memory management and enhances data handling capabilities.

Output Characteristics: 3-STATE

3-state output enhances flexibility in bus systems, allowing multiple devices to share data lines without interference.

Minimum Standby Voltage: 2 V

A low standby voltage minimizes power consumption during idle states, contributing to energy efficiency in designs.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this SRAM is well-suited for harsh environments, ensuring reliability.

Terminal Finish: TIN/TIN BISMUTH

The tin/tin bismuth finish enhances solderability, improving the reliability of connections on PCBs.

Terminal Position: DUAL

Dual terminal positioning allows for easy mounting and connection in varied applications.

Maximum Seated Height: 1.2 mm

A low seated height is ideal for designs where space is crucial, making it a great choice for slim devices.

Width: 8 mm

The compact width provides more flexibility in PCB layout, particularly in densely populated areas.

Minimum Supply Voltage (Vsup): 4.5 V

A minimum supply voltage of 4.5V ensures stable operation across varying conditions, enhancing performance reliability.

Peak Reflow Temperature °C: 260

The peak reflow temperature ensures compatibility with modern soldering techniques, making assembly easier.

Length: 11.8 mm

A reasonable length ensures that the device can fit into various layouts while providing optimal performance.

Temperature Grade: INDUSTRIAL

Industrial temperature grade guarantees consistent performance in demanding situations often found in manufacturing settings.

Technology: CMOS

CMOS technology enhances power efficiency and allows for higher density memory applications.

Parallel or Serial: PARALLEL

Parallel data access speeds up performance, which is advantageous in high-speed applications.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical strength and ease of handling during assembly processes.

Maximum Supply Current: 50 mA

A maximum supply current of 50 mA ensures that this SRAM can handle demanding applications without overheating.

No. of Words: 32768 words

With 32K words of memory, it offers significant storage for various applications without overwhelming power demands.

Memory Width: 8

An 8-bit memory width allows for efficient data processing suitable for numerous consumer and industrial applications.

Terminal Pitch: 0.55 mm

The fine terminal pitch allows for denser device packing on PCBs, making it optimal for compact designs.

No. of Words Code: 32K

The 32K words capacity highlights its capability to support moderate data storage needs effectively.

Maximum Supply Voltage (Vsup): 5.5 V

This maximum supply voltage allows for flexibility in system design, accommodating minor fluctuations in power supply.

Memory Density: 262144 bit

High memory density enables storage of large amounts of data in a compact form, ideal for modern applications.

Memory IC Type: STANDARD SRAM

Being a standard SRAM type ensures that this product is widely supported and understood in the industry.

Maximum Standby Current: 0.000006 Amp

Minimal standby current contributes to overall device efficiency and extends battery life in portable applications.

Maximum Access Time: 55 ns

A maximum access time of 55 ns ensures rapid data retrieval, making this SRAM suitable for high-performance applications.

Technical Specifications

SRAM M68AF031AL55N6E attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e3/e6

Length:

11.8 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP28,.53,22

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.55 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8 mm

Trade Compliance

M68AF031AL55N6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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