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M68AF031AL55N6T

STMicroelectronics

M68AF031AL55N6T by STMicroelectronics

M68AF031AL55N6T by STMicroelectronics is a 32Kx8 asynchronous SRAM with a max access time of 55 ns and operates at a nominal voltage of 5V. Its compact SOIC package makes it ideal for industrial applications requiring reliable memory solutions. With an operating temp range of -40 °C to 85 °C, it's perfect for harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,232 parts In-Stock

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4,232

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Vyrian

USA . 2,457 parts In-Stock

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2,457

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Anansix

USA . 1,736 parts In-Stock

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1,736

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,383 parts In-Stock

1+ parts

$5.108

100+ parts

-

1k+ parts

$4.597

10k+ parts

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1,383

$5.108

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$4.597

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MKK Technologies

India . 1,459 parts In-Stock

1+ parts

$9.605

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1,459

$9.605

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DigiPath Technology Company

USA . 1,459 parts In-Stock

1+ parts

$9.605

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1,459

$9.605

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Corphita

USA . 109 parts In-Stock

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109

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Parana Technologies

USA . 80 parts In-Stock

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$6.107

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80

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$6.107

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Overview

Unlock unparalleled performance and reliability with the M68AF031AL55N6T SRAM from STMicroelectronics, a trusted leader in semiconductor innovation. Designed for industrial applications, this compact memory solution boasts low power consumption and exceptional access speeds, enhancing device efficiency. With robust temperature tolerance and versatile package options, the M68AF031AL55N6T is perfect for demanding environments where quality and durability matter most. Elevate your designs with STMicroelectronics' commitment to excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the SRAM reliable for various applications.

Surface Mount: YES

Surface mount technology allows for compact design and ease of integration into modern PCB layouts.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB, facilitating better arrangement of components.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides fast response times, essential for performance-critical applications.

Input/Output Type: COMMON

A common I/O type simplifies interfacing with other components and reduces design complexity.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V is standard, ensuring compatibility with a wide range of systems.

Power Supplies (V): 5

Single power supply simplifies design requirements and reduces component counts.

No. of Terminals: 28

A total of 28 terminals allows for versatile connectivity and support for various functions.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Small outline, thin profile design enhances space efficiency in compact electronic devices.

Maximum Operating Temperature: 85 °C

An operating temperature of 85 °C ensures reliability in both standard and industrial environments.

Organization: 32KX8

The 32Kx8 organization offers ample memory capacity for storing data in embedded systems.

Output Characteristics: 3-STATE

3-state output capability enhances data management, allowing for better bus control in multi-device configurations.

Minimum Standby Voltage: 2 V

A minimum standby voltage of 2V provides flexibility in low-power applications.

Minimum Operating Temperature: -40 °C

A wide operating temperature range ensures functionality in harsh environments, suitable for industrial applications.

Terminal Finish: TIN LEAD

Tin-lead finish provides excellent solderability and extends the lifespan of connections.

Terminal Position: DUAL

Dual terminal positioning allows for versatile mounting options and improved layout designs.

Maximum Seated Height: 1.2 mm

Low seated height contributes to a compact overall design, ideal for space-constrained applications.

Width: 8 mm

A width of 8 mm suits high-density board layouts without sacrificing performance.

Minimum Supply Voltage (Vsup): 4.5 V

Minimum supply voltage of 4.5V enhances compatibility with various power conditions.

Length: 11.8 mm

Length ensures that the SRAM can fit well in compact designs while still offering optimal performance.

Temperature Grade: INDUSTRIAL

Industrial temperature grading increases the reliability and longevity of the product in challenging environments.

Technology: CMOS

CMOS technology contributes to lower power consumption and higher performance, making it ideal for modern applications.

Parallel or Serial: PARALLEL

Parallel data transfer allows for faster read and write operations, enhancing overall system performance.

Terminal Form: GULL WING

Gull wing terminals provide excellent solder joints and improve mechanical strength in mounted devices.

Maximum Supply Current: 50 mA

A maximum supply current of 50 mA is efficient, making it suitable for battery-operated devices.

No. of Words: 32768 words

The capacity of 32,768 words enables significant data storage for various applications, meeting diverse memory needs.

Memory Width: 8

An 8-bit memory width is ideal for handling standard data types commonly used in modern digital systems.

Terminal Pitch: 0.55 mm

A terminal pitch of 0.55 mm allows for high-density packing of devices on PCBs.

No. of Words Code: 32K

With a 32K word count, this SRAM provides a substantial data reservoir for embedded and processing applications.

Maximum Supply Voltage (Vsup): 5.5 V

Support for a maximum supply voltage up to 5.5V offers flexibility in power supply designs.

Memory Density: 262144 bit

The memory density of 262,144 bits makes this SRAM suitable for various applications requiring substantial storage capabilities.

Memory IC Type: STANDARD SRAM

As a standard SRAM type, it guarantees compatibility and ease of integration within most system architectures.

Maximum Standby Current: 0.000006 Amp

Extremely low standby current minimizes energy consumption, making it an excellent choice for power-sensitive applications.

Maximum Access Time: 55 ns

A maximum access time of 55 ns ensures quick data retrieval, enhancing system responsiveness.

Technical Specifications

SRAM M68AF031AL55N6T attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP28,.53,22

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.55 mm

Terminal Position:

DUAL

Width:

8 mm

Trade Compliance

M68AF031AL55N6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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