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M68AF031AL55MS6E

STMicroelectronics

M68AF031AL55MS6E by STMicroelectronics

M68AF031AL55MS6E by STMicroelectronics is a 32Kx8 asynchronous SRAM with a 5V supply, ideal for industrial applications. It features a max access time of 55 ns and operates in temperatures from -40 °C to 85 °C. Its compact SO package ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,593 parts In-Stock

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Digiode

USA . 1,368 parts In-Stock

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1,368

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Vyrian

USA . 99 parts In-Stock

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99

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 907 parts In-Stock

1+ parts

$3.551

100+ parts

-

1k+ parts

$3.196

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907

$3.551

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$3.196

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MKK Technologies

India . 944 parts In-Stock

1+ parts

$6.678

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944

$6.678

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DigiPath Technology Company

USA . 944 parts In-Stock

1+ parts

$6.678

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944

$6.678

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Corphita

USA . 811 parts In-Stock

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811

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Parana Technologies

USA . 240 parts In-Stock

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$4.246

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240

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$4.246

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Overview

Experience exceptional reliability and performance with the M68AF031AL55MS6E SRAM from STMicroelectronics, a leader in innovative semiconductor solutions. This versatile memory component is designed for various applications, ensuring optimal efficiency and speed in your systems. With a robust build and industry-grade temperature tolerance, it guarantees dependable operation even in demanding environments. Elevate your designs with ST’s quality assurance and unlock unprecedented value for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material provides excellent protection against environmental factors, enhancing longevity.

Surface Mount: YES

Surface mount technology allows for compact installations, making it ideal for space-constrained applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes board space and allows for easier integration into various designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access without the need for a clock signal, improving performance.

Input/Output Type: COMMON

Common I/O type simplifies design and implementation in a wide range of applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage ensures compatibility with many systems and ease of integration.

Power Supplies (V): 5

The compatibility with a common power supply voltage simplifies circuit design and reduces costs.

No. of Terminals: 28

The 28 terminals provide sufficient connectivity for versatile applications while maintaining a compact footprint.

Package Style (Meter): SMALL OUTLINE

The small outline package style occupies less board space, which is advantageous for high-density applications.

Maximum Operating Temperature: 85 °C

An operational temperature up to 85 °C enables reliable performance in various industrial environments.

Organization: 32KX8

The 32Kx8 organization offers an optimal balance of capacity and access speed for many applications.

Output Characteristics: 3-STATE

3-state output characteristics allow for easy interfacing with multiple devices and enhance bus control.

Minimum Standby Voltage: 2 V

The low minimum standby voltage helps reduce power consumption when the device is not actively in use.

Minimum Operating Temperature: -40 °C

Operating at temperatures as low as -40 °C makes this SRAM suitable for extreme conditions and harsh environments.

Terminal Position: DUAL

Dual terminal positioning aids in enhanced connection stability and eases PCB layout.

Maximum Seated Height: 2.79 mm

The low profile of 2.79 mm allows for compact designs, suitable for devices where height is a constraint.

Width: 7.505 mm

A compact width ensures it can fit into tight spaces within electronic assemblies.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage of 4.5 V allows for operation in systems with slightly varied power supply levels.

Peak Reflow Temperature °C: 260

A high peak reflow temperature enables compatibility with standard soldering processes, ensuring reliable joints.

Length: 18.22 mm

The compact length caters to small form factor designs, making it suitable for modern electronic applications.

Temperature Grade: INDUSTRIAL

Designed for industrial-grade temperature resilience, this SRAM is suitable for demanding applications.

Technology: CMOS

CMOS technology ensures low power consumption while maintaining high-speed performance.

Parallel or Serial: PARALLEL

The parallel interface facilitates faster data transfer rates, making it ideal for performance-critical applications.

Terminal Form: GULL WING

Gull wing terminals provide better mechanical stability and compatibility with automated assembly techniques.

Maximum Supply Current: 50 mA

A maximum supply current of 50 mA indicates efficient power usage under typical operating conditions.

No. of Words: 32768 words

With 32K words of memory, it strikes a good balance between capacity and speed for most applications.

Memory Width: 8

An 8-bit memory width allows for efficient data processing and manipulation in various applications.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch is ideal for reliable soldering and improved layout design.

No. of Words Code: 32K

The 32K word code provides ample data storage for versatile applications while remaining in a reasonable chip size.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5 V provides flexibility in power supply options for designers.

Memory Density: 262144 bit

The 262144 bit memory density offers substantial data storage, enabling complex applications.

Memory IC Type: STANDARD SRAM

As a standard SRAM, it offers reliability and compatibility with numerous existing electronic systems.

Maximum Standby Current: 0.000006 Amp

The ultra-low maximum standby current reduces power consumption significantly during idle periods.

Maximum Access Time: 55 ns

A maximum access time of 55 ns allows for fast data retrieval, ensuring efficient performance in real-time applications.

Technical Specifications

SRAM M68AF031AL55MS6E attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

Length:

18.22 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.5

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.505 mm

Trade Compliance

M68AF031AL55MS6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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