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STMicroelectronics SRAM 32

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
M74HC670B1R by STMicroelectronics

M74HC670B1R

STMicroelectronics

STMicroelectronics M74HC670B1R is a 16-bit SRAM with 4x4 organization, operating at 2-6V. It features 280ns access time, CMOS technology, and 3-STATE output. Ideal for military applications due to its -55 to 125 °C temperature range and through-hole terminal form.

280 ns

R-PDIP-T16

e3

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP16,.3

RECTANGULAR

IN-LINE

PARALLEL

2/6

Not Qualified

5.1 mm

Other Memory ICs

6 V

2 V

4.5

NO

CMOS

MILITARY

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

M74HC670M1R by STMicroelectronics

M74HC670M1R

STMicroelectronics

STMicroelectronics M74HC670M1R is a 16-bit SRAM with 4x4 organization, operating at 2-6V. It features 280ns access time, operates in asynchronous mode, and has a temperature range of -55 to 125 °C. Ideal for military applications due to its small outline package and CMOS technology.

280 ns

R-PDSO-G16

e4

9.9 mm

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

2/6

Not Qualified

1.75 mm

Other Memory ICs

6 V

2 V

4.5

YES

CMOS

MILITARY

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

M48Z2M1Y-70PL1 by STMicroelectronics

M48Z2M1Y-70PL1

STMicroelectronics

M48Z2M1Y-70PL1 by STMicroelectronics is a 2MX8 SRAM with 16777216 bit memory density, operating at 5V. It features an access time of 70ns, output enable function, and operates in parallel mode. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

70 ns

R-PDIP-T36

e0

52.96 mm

16777216 bit

NON-VOLATILE SRAM

8

1

1

36

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

PARALLEL

NOT SPECIFIED

5

Not Qualified

9.52 mm

.008 Amp

SRAMs

140 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

M48Z128-70PM1 by STMicroelectronics

M48Z128-70PM1

STMicroelectronics

M48Z128-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 70ns access time, operating at 5V. It features asynchronous mode, 3-state output characteristics, and a rectangular package shape. Ideal for applications requiring reliable memory storage in commercial temperature environments.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z128Y-70PM1 by STMicroelectronics

M48Z128Y-70PM1

STMicroelectronics

M48Z128Y-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 3-STATE output characteristics. Operating at 5V, it has an access time of 70ns and standby current of 0.004A. Ideal for commercial applications requiring reliable memory storage in a compact MICROELECTRONIC ASSEMBLY package.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

225

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z128Y-85PM1 by STMicroelectronics

M48Z128Y-85PM1

STMicroelectronics

STMicroelectronics' M48Z128Y-85PM1 is a 128Kx8 non-volatile SRAM module with 3-STATE output, operating at 5V. With an access time of 85ns, it's ideal for applications requiring fast and reliable data storage in commercial-grade environments. The rectangular package style and asynchronous operation make it suitable for various microelectronic assemblies.

85 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z512AY-70PM1 by STMicroelectronics

M48Z512AY-70PM1

STMicroelectronics

M48Z512AY-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with asynchronous operation and 3-STATE output. It operates at 5V, has a max access time of 70ns, and features non-volatile memory technology. This rectangular package with 32 terminals is ideal for commercial applications requiring reliable memory storage.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.52 mm

.005 Amp

SRAMs

115 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z512A-70PM1 by STMicroelectronics

M48Z512A-70PM1

STMicroelectronics

M48Z512A-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with 70ns access time and operates at 5V. It features a rectangular package shape, asynchronous mode, and 3-state output characteristics. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.52 mm

.005 Amp

SRAMs

115 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z02-150PC1 by STMicroelectronics

M48Z02-150PC1

STMicroelectronics

M48Z02-150PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features asynchronous mode and common I/O type, suitable for commercial applications. With a memory density of 16384 bit, this CMOS technology-based IC offers parallel operation in a rectangular package style.

COMMON

R-PDIP-T24

e3

34.545 mm

16384 bit

STANDARD SRAM

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

4.75 V

SRAMs

80 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z02-200PC1 by STMicroelectronics

M48Z02-200PC1

STMicroelectronics

M48Z02-200PC1 by STMicroelectronics is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It features an asynchronous mode, parallel interface, and max access time of 200ns. Ideal for applications requiring reliable data storage in commercial temperature environments.

200 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T24

e3

34.545 mm

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z02-70PC1 by STMicroelectronics

M48Z02-70PC1

STMicroelectronics

M48Z02-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 5V supply voltage, operating in asynchronous mode. It features 3-STATE output characteristics and offers 16384 bits memory density. Ideal for applications requiring common I/O type and parallel operation at temperatures up to 70°C.

COMMON

R-PDIP-T24

e3

34.545 mm

16384 bit

STANDARD SRAM

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

4.75 V

SRAMs

80 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z12-200PC1 by STMicroelectronics

M48Z12-200PC1

STMicroelectronics

STMicroelectronics M48Z12-200PC1 is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It has a max access time of 200ns and standby current of 0.003Amp. Ideal for applications requiring reliable memory storage in commercial temperature environments.

200 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T24

e3

34.545 mm

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z12-70PC1 by STMicroelectronics

M48Z12-70PC1

STMicroelectronics

M48Z12-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features a rectangular package style, asynchronous mode, and common I/O type. Ideal for applications requiring standard SRAM memory technology in commercial temperature grades.

COMMON

R-PDIP-T24

e3

34.545 mm

16384 bit

STANDARD SRAM

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

4.5 V

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z18-100PC1 by STMicroelectronics

M48Z18-100PC1

STMicroelectronics

M48Z18-100PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 100ns. This rectangular package SRAM is commonly used in commercial applications requiring reliable, low-power memory solutions.

100 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM MODULE

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z35-70PC1 by STMicroelectronics

M48Z35-70PC1

STMicroelectronics

M48Z35-70PC1 by STMicroelectronics is a 32Kx8 SRAM with 70ns access time and operates at 5V. It features a rectangular package style, asynchronous mode, and 3-STATE output characteristics. Ideal for commercial applications requiring reliable memory storage in devices with parallel data processing needs.

70 ns

R-PDIP-T28

e3

39.625 mm

262144 bit

SRAM STD

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z58-70PC1 by STMicroelectronics

M48Z58-70PC1

STMicroelectronics

M48Z58-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. Operating at 5V, it features a max access time of 70ns and output enable function. This CMOS technology-based IC is ideal for applications requiring reliable data storage in commercial temperature environments.

70 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z58Y-70PC1 by STMicroelectronics

M48Z58Y-70PC1

STMicroelectronics

M48Z58Y-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 70ns. This rectangular package SRAM is commonly used in applications requiring reliable data storage and retrieval in commercial temperature environments.

70 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z129V-85PM1 by STMicroelectronics

M48Z129V-85PM1

STMicroelectronics

M48Z129V-85PM1 by STMicroelectronics is a 128Kx8 SRAM module with asynchronous operation, 3.3V supply, and 85ns access time. It is ideal for applications requiring non-volatile memory storage in commercial temperature environments.

85 ns

R-PDIP-T32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z512AV-85PM1 by STMicroelectronics

M48Z512AV-85PM1

STMicroelectronics

STMicroelectronics M48Z512AV-85PM1 is a 512Kx8 non-volatile SRAM module with 85ns access time, operating at 3.3V. It has a rectangular package shape, through-hole terminal form, and is suitable for commercial temperature grade applications.

85 ns

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z512BV-85PM1 by STMicroelectronics

M48Z512BV-85PM1

STMicroelectronics

M48Z512BV-85PM1 by STMicroelectronics is a 512Kx8 non-volatile SRAM module with asynchronous operation and a max access time of 85 ns. It operates at 3.3V, supports dual terminals, and functions effectively in commercial applications up to 70 °C. Ideal for data storage in embedded systems.

85 ns

R-PDMA-P32

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

M68AW256ML70ND6T by STMicroelectronics

M68AW256ML70ND6T

STMicroelectronics

M68AW256ML70ND6T from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.

70 ns

COMMON

R-PDSO-G44

e0

18.41 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000009 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

M48Z35AV-10PC1 by STMicroelectronics

M48Z35AV-10PC1

STMicroelectronics

M48Z35AV-10PC1 by STMicroelectronics is a 32Kx8 non-volatile SRAM module with CMOS technology. It operates at 3.3V, has a max access time of 100ns, and consumes up to 50mA of supply current. This rectangular package with 28 terminals is ideal for applications requiring reliable data storage in commercial temperature environments.

100 ns

R-PDIP-T28

e3

39.625 mm

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M68AW256ML70ZB6 by STMicroelectronics

M68AW256ML70ZB6

STMicroelectronics

M68AW256ML70ZB6 from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at 3V, supports industrial temp ranges (-40 °C to 85 °C), and features a thin profile grid array package. Ideal for high-speed data storage in embedded systems.

70 ns

COMMON

R-PBGA-B48

e0

8 mm

4194304 bit

STANDARD SRAM

16

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000009 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

7 mm

M68AW128ML70ZB6 by STMicroelectronics

M68AW128ML70ZB6

STMicroelectronics

M68AW128ML70ZB6 from STMicroelectronics is a 128Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.

70 ns

COMMON

R-PBGA-B48

8 mm

2097152 bit

STANDARD SRAM

16

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000009 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

M68AW512ML70ND6 by STMicroelectronics

M68AW512ML70ND6

STMicroelectronics

M68AW512ML70ND6 from STMicroelectronics is a 512Kx16 asynchronous SRAM with a max access time of 70 ns. It operates b/w 2.7V and 3.6V, suitable for industrial applications due to its -40 °C to 85 °C temp range. Its compact SOIC package ensures efficient surface mounting.

70 ns

R-PDSO-G44

e0

18.41 mm

8388608 bit

STANDARD SRAM

16

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

M48Z2M1V-85PL1 by STMicroelectronics

M48Z2M1V-85PL1

STMicroelectronics

M48Z2M1V-85PL1 by STMicroelectronics is a 2Mx8 non-volatile SRAM with a max access time of 85 ns. It operates asynchronously at a supply voltage of 3.3V and supports temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention, it features a compact in-line package with 36 terminals.

85 ns

R-PDIP-T36

e0

52.96 mm

16777216 bit

NON-VOLATILE SRAM

8

1

36

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX8

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.001 Amp

SRAMs

70 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M68AW031AM70N6T by STMicroelectronics

M68AW031AM70N6T

STMicroelectronics

M68AW031AM70N6T from STMicroelectronics is a 32Kx8 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temperature ranges (-40 °C to 85 °C). Ideal for applications requiring fast, reliable memory in compact designs.

70 ns

COMMON

R-PDSO-G28

e0

11.8 mm

262144 bit

STANDARD SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.000006 Amp

1.5 V

SRAMs

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.55 mm

DUAL

8 mm

M48Z58Y-70MH1E by STMicroelectronics

M48Z58Y-70MH1E

STMicroelectronics

M48Z58Y-70MH1E by STMicroelectronics is a non-volatile SRAM with 8K x 8 organization, operating at a nominal voltage of 5V. It features asynchronous access with a max access time of 70 ns and operates in temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention and fast performance.

70 ns

R-PDSO-G28

e3

18.1 mm

65536 bit

NON-VOLATILE SRAM

8

3

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z35Y-70MH1E by STMicroelectronics

M48Z35Y-70MH1E

STMicroelectronics

M48Z35Y-70MH1E by STMicroelectronics is a 32Kx8 non-volatile SRAM with a max access time of 70 ns, operating at 5V. It features a compact SO package and operates asynchronously, making it ideal for data storage in various electronic applications. With a commercial temp grade, it suits diverse environments.

70 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e3

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z35Y-70MH6E by STMicroelectronics

M48Z35Y-70MH6E

STMicroelectronics

M48Z35Y-70MH6E by STMicroelectronics is a non-volatile SRAM with a 32K x 8 organization, operating at 5V. It features a max access time of 70 ns and operates in temperatures from -40 °C to 85 °C. Ideal for industrial applications requiring reliable data retention.

70 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e4

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z32V-35MT1F by STMicroelectronics

M48Z32V-35MT1F

STMicroelectronics

M48Z32V-35MT1F by STMicroelectronics is a 32Kx8 non-volatile SRAM with a 3.3V supply, ideal for applications requiring fast data access and reliability. It features a max access time of 35 ns and operates in temperatures from 0 °C to 70 °C. This compact, surface-mount device ensures efficient performance in various electronic systems.

35 ns

R-PDSO-G44

e3/e4

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

1

44

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SSOP

SOP44,.5,32

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

3.05 mm

.0005 Amp

SRAMs

45 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

.81 mm

DUAL

NOT SPECIFIED

8.56 mm

M48Z35AV-10MH1E by STMicroelectronics

M48Z35AV-10MH1E

STMicroelectronics

M48Z35AV-10MH1E by STMicroelectronics is a 32Kx8 non-volatile SRAM with a 3.3V supply, ideal for applications requiring fast data access and reliability. It features asynchronous operation with a max access time of 100 ns and operates b/w 0 °C to 70 °C. This compact, surface-mount device is perfect for commercial electronics needing efficient memory solutions.

100 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e3

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm