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M48Z512BV-85PM1

STMicroelectronics

M48Z512BV-85PM1 by STMicroelectronics

M48Z512BV-85PM1 by STMicroelectronics is a 512Kx8 non-volatile SRAM module with asynchronous operation and a max access time of 85 ns. It operates at 3.3V, supports dual terminals, and functions effectively in commercial applications up to 70 °C. Ideal for data storage in embedded systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,997 parts In-Stock

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8,997

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Anansix

USA . 1,939 parts In-Stock

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Digiode

USA . 1,003 parts In-Stock

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1,003

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 346 parts In-Stock

1+ parts

$4.278

100+ parts

-

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$3.850

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346

$4.278

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$3.850

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MKK Technologies

India . 1,413 parts In-Stock

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$8.044

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1,413

$8.044

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DigiPath Technology Company

USA . 1,413 parts In-Stock

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$8.044

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1,413

$8.044

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AZTECH Wire

Italy . 71 parts In-Stock

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$8.200

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71

$8.200

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Microchip USA

USA . 374 parts In-Stock

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$31.540

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374

$31.540

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Parana Technologies

USA . 899 parts In-Stock

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$5.115

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899

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Corphita

USA . 363 parts In-Stock

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Perfect Parts

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Overview

Unlock unparalleled performance with the M48Z512BV-85PM1 SRAM from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers this high-speed, non-volatile memory solution designed for a variety of applications, from consumer electronics to industrial automation. Enjoy fast data access, low power consumption, and robust reliability, ensuring your devices operate seamlessly in demanding environments. Experience the difference that premium engineering brings!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance against environmental factors, making the product reliable in various applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization in circuit design, allowing for effective layouts in compact devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster access times and simpler interface designs, beneficial for high-speed applications.

Nominal Supply Voltage / Vsup: 3.3 V

A nominal voltage of 3.3 V ensures compatibility with a wide range of modern electronic systems and reduces power consumption.

Power Supplies (V): 3.3

Utilizing a single power supply voltage simplifies the design and reduces the risk of voltage-related issues.

No. of Terminals: 32

Having 32 terminals provides sufficient input/output options for integration with various systems, enhancing versatility.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly meets industry standards for compactness and performance, making the product suitable for advanced electronics.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C allows this SRAM to function effectively in a wide range of environments.

Organization: 512KX8

The 512Kx8 organization provides a robust memory structure that balances space and performance for various applications.

Minimum Operating Temperature: 0 °C

Being operational from 0 °C enhances reliability in controlled environments, making it versatile for general use.

Terminal Position: DUAL

Dual terminal positioning allows easier PCB integration and better soldering reliability.

Minimum Supply Voltage (Vsup): 3 V

The capacity to operate down to 3 V adds flexibility in power supply design and battery-operated applications.

Temperature Grade: COMMERCIAL

A commercial temperature grade indicates broad applicability in consumer electronics without industrial constraints.

Technology: CMOS

CMOS technology promotes lower power consumption and higher density, improving overall performance and efficiency.

Parallel or Serial: PARALLEL

Parallel communication enhances data transfer rates, making this SRAM suitable for performance-intensive applications.

Terminal Form: PIN/PEG

PIN/PEG terminals facilitate straightforward PCB mounting, improving manufacturing efficiency.

Maximum Supply Current: 50 mA

A maximum supply current of 50 mA ensures powerful performance without excessive energy consumption, beneficial for battery life.

No. of Words: 524288 words

With 524,288 words, this SRAM provides substantial data storage capacity for a variety of applications.

Memory Width: 8

An 8-bit memory width strikes a balance between storage capacity and complexity, suitable for many standard applications.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54 mm is a standard size, allowing compatibility with many PCB designs and components.

No. of Words Code: 512K

The 512K word capacity combines efficiency with performance, making it ideal for memory-intensive applications.

Maximum Supply Voltage (Vsup): 3.6 V

The flexibility of operating at up to 3.6 V helps accommodate different power supply configurations in varying designs.

Memory Density: 4194304 bit

High memory density allows for compact designs while providing significant storage capabilities for various data-driven applications.

Memory IC Type: NON-VOLATILE SRAM MODULE

Non-volatile SRAM ensures data retention without a constant power supply, proving beneficial in mission-critical applications.

Maximum Standby Current: 0.003 Amp

A low standby current enhances energy efficiency and extends the lifetime of battery-operated devices.

Maximum Access Time: 85 ns

With an access time of 85 ns, this SRAM provides quick data retrieval, making it suitable for performance-critical applications.

Technical Specifications

SRAM M48Z512BV-85PM1 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-PDMA-P32

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Standby Current:

.003 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

M48Z512BV-85PM1 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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