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M48Z08Y-10PC1

STMicroelectronics

M48Z08Y-10PC1 by STMicroelectronics

M48Z08Y-10PC1 by STMicroelectronics is a non-volatile SRAM module with an 8K x 8 organization, operating at a nominal voltage of 5V. It features asynchronous access with a max access time of 100 ns and operates b/w 0 °C to 70 °C. Ideal for applications requiring reliable data retention and fast performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,871 parts In-Stock

1+ parts

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3,871

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Anansix

USA . 954 parts In-Stock

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954

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Vyrian

USA . 179 parts In-Stock

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179

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,202 parts In-Stock

1+ parts

$3.562

100+ parts

-

1k+ parts

$3.206

10k+ parts

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1,202

$3.562

-

$3.206

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MKK Technologies

India . 480 parts In-Stock

1+ parts

$6.699

100+ parts

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480

$6.699

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DigiPath Technology Company

USA . 480 parts In-Stock

1+ parts

$6.699

100+ parts

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480

$6.699

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Corphita

USA . 3,593 parts In-Stock

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3,593

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Parana Technologies

USA . 1,008 parts In-Stock

1+ parts

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$4.259

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1,008

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$4.259

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Overview

Unlock unparalleled performance with the M48Z08Y-10PC1 SRAM from STMicroelectronics, a leader in innovative semiconductor solutions. This non-volatile memory module combines exceptional reliability with quick access times, making it ideal for applications in automotive, industrial, and consumer electronics. Benefit from its robust design and superior temperature tolerance, ensuring your projects run smoothly, efficiently, and reliably—because quality matters!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package material ensures durability and protection against environmental factors, making this SRAM suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient space utilization on PCBs, allowing for more compact designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for easy integration with other components without the need for synchronized clock signals, simplifying system design.

Nominal Supply Voltage / Vsup: 5 V

Operating at a nominal 5V supply ensures compatibility with standard digital circuits, making it versatile for various applications.

Power Supplies (V): 5

A single 5V power supply simplifies the design and reduces the need for additional voltage regulation components.

No. of Terminals: 28

With 28 terminals, this SRAM offers a good balance of connections for functionality while maintaining a compact form factor.

Package Style (Meter): IN-LINE

The in-line package style is ideal for through-hole mounting, ensuring strong physical connections on the PCB.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C provides reliable performance in moderately high-temperature environments.

Organization: 8KX8

With an organization of 8Kx8, this SRAM offers a balanced memory structure suitable for a wide range of applications.

Minimum Operating Temperature: 0 °C

The 0 °C minimum temperature rating ensures functionality in standard operating conditions, making it suitable for various environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability, improving assembly reliability.

Terminal Position: DUAL

Dual terminal positioning facilitates efficient layout design and improves signal integrity.

Maximum Seated Height: 9.65 mm

A maximum seated height of 9.65 mm keeps the component profile low for space-constrained applications.

Width: 15.24 mm

The compact width allows for easy placement in dense circuit designs, optimizing space usage.

Minimum Supply Voltage (Vsup): 4.5 V

This flexible supply voltage range ensures that the SRAM can be utilized in a multitude of applications with varying power supply conditions.

Length: 39.625 mm

The specified length aids in standardization for PCB layout and design, making manufacturing easier.

Temperature Grade: COMMERCIAL

Being commercially rated ensures the SRAM chip is designed for reliable performance under typical operating conditions.

Technology: CMOS

CMOS technology provides low power consumption, making it ideal for battery-powered and energy-efficient applications.

Parallel or Serial: PARALLEL

Parallel operation allows for faster data transfer rates, suitable for high-speed applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are ideal for prototyping and repair.

Maximum Supply Current: 80 mA

At a maximum supply current of 80 mA, this SRAM module is efficient for high-performance applications.

No. of Words: 8192 words

With 8192 words of storage, this SRAM can handle substantial data, making it suitable for various applications.

Memory Width: 8

An 8-bit width strikes a balance for many applications, providing sufficient data processing capability in a compact form.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch is standard, ensuring compatibility with many PCB designs and assembly processes.

No. of Words Code: 8K

The 8K word code indicates a decent capacity for moderate storage needs in consumer and industrial devices.

Maximum Supply Voltage (Vsup): 5.5 V

Support for a maximum supply voltage of 5.5 V allows for some flexibility in power supply design.

Memory Density: 65536 bit

A memory density of 65536 bits indicates sufficient storage capabilities for intermediate data handling tasks.

Memory IC Type: NON-VOLATILE SRAM MODULE

Being a non-volatile SRAM module allows for data retention even when power is lost, making it an ideal choice for critical applications.

Maximum Standby Current: 0.003 Amp

A low maximum standby current minimizes power consumption, contributing to overall system efficiency.

Maximum Access Time: 100 ns

With a maximum access time of 100 ns, data retrieval is quick, making this SRAM suitable for high-speed applications.

Technical Specifications

SRAM M48Z08Y-10PC1 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

JESD-30 Code:

R-PDIP-T28

JESD-609 Code:

e3

Length:

39.625 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

9.65 mm

Maximum Standby Current:

.003 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M48Z08Y-10PC1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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