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M48Z08Y-10MH1TR

STMicroelectronics

M48Z08Y-10MH1TR by STMicroelectronics

M48Z08Y-10MH1TR by STMicroelectronics is a non-volatile SRAM with 8K x 8 organization, operating at a nominal voltage of 5V. It features asynchronous access with a max access time of 100 ns and operates in temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention and fast performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,142 parts In-Stock

1+ parts

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3,142

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Anansix

USA . 2,890 parts In-Stock

1+ parts

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2,890

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Vyrian

USA . 277 parts In-Stock

1+ parts

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277

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 508 parts In-Stock

1+ parts

$3.393

100+ parts

-

1k+ parts

$3.054

10k+ parts

-

508

$3.393

-

$3.054

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MKK Technologies

India . 1,532 parts In-Stock

1+ parts

$6.380

100+ parts

-

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1,532

$6.380

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DigiPath Technology Company

USA . 1,532 parts In-Stock

1+ parts

$6.380

100+ parts

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1,532

$6.380

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Corphita

USA . 1,584 parts In-Stock

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1,584

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Parana Technologies

USA . 1,055 parts In-Stock

1+ parts

-

100+ parts

$4.057

1k+ parts

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1,055

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$4.057

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Overview

Unlock the power of reliable memory with the M48Z08Y-10MH1TR from STMicroelectronics. Renowned for superior quality, STMicroelectronics delivers a non-volatile SRAM solution perfect for applications requiring fast data access and stability in demanding environments. With its compact design and low power consumption, this device ensures optimal performance while enhancing your systems' efficiency. Experience unmatched reliability and innovation that drives your projects forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body enhances durability and protects the semiconductor components from environmental damage, making it reliable for commercial applications.

Surface Mount: YES

Surface mount technology allows for smaller and more efficient PCB designs, making this SRAM suitable for compact electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on printed circuit boards, accommodating more components in limited space.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simpler control logic and faster access times, ensuring quick data retrieval and improved performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V makes this SRAM compatible with a wide range of digital circuits, easily integrating into existing systems.

Power Supplies (V): 5

Consistent power supply requirement simplifies system design and lowers the need for additional voltage regulation circuits.

No. of Terminals: 28

With 28 terminals, this SRAM offers sufficient connectivity for various data lines and control signals, supporting complex applications.

Package Style (Meter): SMALL OUTLINE

The small outline package provides a compact footprint, which is advantageous for space-constrained applications.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliable performance in typical commercial environments, making it suitable for various applications.

Organization: 8KX8

The 8K x 8 configuration allows for efficient data organization and retrieval, making it ideal for use in applications that require moderate memory capacity.

Minimum Operating Temperature: 0 °C

Operating from 0 °C allows for versatility in different environments, supporting both indoor and outdoor applications.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals provides better solderability, enhancing reliability during PCB assembly.

Terminal Position: DUAL

Dual terminal positions facilitate easy layout and routing in PCB designs, promoting efficient assembly and connectivity.

Maximum Seated Height: 3.05 mm

The low seated height allows for compact designs and ensures compatibility with standard PCB thicknesses.

Width: 8.56 mm

The compact width enables denser packing on PCB layouts, allowing for more features in a smaller area.

Minimum Supply Voltage (Vsup): 4.5 V

A minimum supply voltage of 4.5 V provides flexibility in design while maintaining stable performance.

Length: 18.1 mm

The moderate length of the package allows it to fit in various design configurations without compromising performance.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures consistent performance across a range of everyday operating conditions.

Technology: CMOS

CMOS technology offers low power consumption, making this SRAM advantageous for battery-operated and energy-sensitive devices.

Parallel or Serial: PARALLEL

Parallel access allows multiple bits to be read or written simultaneously, increasing speed and efficiency in data handling.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical strength and facilitate easy soldering, enhancing reliability during assembly.

Maximum Supply Current: 80 mA

A maximum supply current of 80 mA indicates reasonable power draw, ideal for devices where energy efficiency is a consideration.

No. of Words: 8192 words

With support for 8192 words of memory, this SRAM offers sufficient storage capacity for many applications requiring moderate amounts of data.

Memory Width: 8

An 8-bit memory width provides compatibility with most microcontrollers and data buses, making it easy to integrate into numerous systems.

Terminal Pitch: 1.27 mm

A 1.27 mm terminal pitch ensures compatibility with standard PCB designs, allowing for efficient layout and connections.

No. of Words Code: 8K

Having an 8K memory specification indicates sufficient capacity for embedded applications and moderate data storage needs.

Maximum Supply Voltage (Vsup): 5.5 V

Supporting up to 5.5 V supply voltage offers headroom for power supply fluctuations, enhancing reliability.

Memory Density: 65536 bit

A memory density of 65536 bits allows for practical data storage, making it suitable for typical applications like cache memory.

Memory IC Type: NON-VOLATILE SRAM

As a non-volatile SRAM, it retains data without power, making it ideal for applications requiring data retention during power outages.

Maximum Standby Current: 0.003 Amp

A low maximum standby current of 0.003 Amp ensures minimal power consumption during idle times, prolonging battery life in portable devices.

Maximum Access Time: 100 ns

With a maximum access time of 100 ns, this SRAM provides fast data read/write speed, making it suitable for high-performance applications.

Technical Specifications

SRAM M48Z08Y-10MH1TR attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e3

Length:

18.1 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.05 mm

Maximum Standby Current:

.003 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

8.56 mm

Trade Compliance

M48Z08Y-10MH1TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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