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M48Z128Y-70PM1

STMicroelectronics

M48Z128Y-70PM1 by STMicroelectronics

M48Z128Y-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 3-STATE output characteristics. Operating at 5V, it has an access time of 70ns and standby current of 0.004A. Ideal for commercial applications requiring reliable memory storage in a compact MICROELECTRONIC ASSEMBLY package.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,056 parts In-Stock

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Digiode

USA . 4,806 parts In-Stock

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Anansix

USA . 2,781 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 12 parts In-Stock

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Bristol Electronics

USA . 12 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 811 parts In-Stock

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$3.968

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-

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$3.571

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811

$3.968

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$3.571

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Semicontronic

India . 599 parts In-Stock

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$4.000

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$3.900

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$3.880

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599

$4.000

$3.900

$3.880

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Ampacity Inc.

Singapore . 1,451 parts In-Stock

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$7.000

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$7.000

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MKK Technologies

India . 1,979 parts In-Stock

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$7.461

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DigiPath Technology Company

USA . 1,979 parts In-Stock

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$7.461

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AZTECH Wire

Italy . 264 parts In-Stock

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$18.970

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Corohmni

South Africa . 233 parts In-Stock

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$21.514

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Lixinc

USA . 10,321 parts In-Stock

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Corphita

USA . 3,939 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,808 parts In-Stock

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Kepictronics

USA . 2,576 parts In-Stock

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Continental Prestige Electronics

USA . 2,498 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Parana Technologies

USA . 1,543 parts In-Stock

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$4.744

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Argo Parts USA

USA . 556 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 29 parts In-Stock

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Glotronic Ltd.

UK . 23 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of reliable data storage with the M48Z128Y-70PM1 by STMicroelectronics. As a trusted leader in semiconductor manufacturing, STMicroelectronics delivers unparalleled quality and performance in every product. Ideal for a wide range of applications, this Non-Volatile SRAM Module offers customers the value of secure data retention and fast access times. Say goodbye to data loss worries and hello to seamless operations with the M48Z128Y-70PM1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable for easy handling and long-lasting performance.

Nominal Supply Voltage: 5V

Operating at a stable supply voltage of 5V ensures reliable and consistent performance of the SRAM module.

No. of Terminals: 32

Having 32 terminals allows for secure connections and efficient data transfer within the module.

Maximum Operating Temperature: 70 °C

With a high operating temperature of 70 °C, this SRAM module can function effectively in various environmental conditions.

Organization: 128KX8

The organization of 128KX8 provides a high memory capacity and efficient data handling capability for storage and retrieval.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high speed performance of the SRAM module.

Maximum Access Time: 70 ns

The fast maximum access time of 70 ns ensures quick data retrieval and processing, making it suitable for high-speed applications.

Technical Specifications

SRAM M48Z128Y-70PM1 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

JESD-30 Code:

R-PDMA-P32

JESD-609 Code:

e3

Length:

42.8 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

9.52 mm

Maximum Standby Current:

.004 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

105 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M48Z128Y-70PM1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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