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M48Z12-120PC1

STMicroelectronics

M48Z12-120PC1 by STMicroelectronics

M48Z12-120PC1 by STMicroelectronics is a 2Kx8 non-volatile SRAM with 16384-bit memory density. It operates at 5V, has a max access time of 120ns, and consumes up to 80mA supply current. This CMOS technology chip in PLASTIC/EPOXY package is ideal for commercial applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,980 parts In-Stock

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2,980

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Anansix

USA . 2,842 parts In-Stock

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2,842

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Digiode

USA . 2,771 parts In-Stock

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2,771

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,970 parts In-Stock

1+ parts

$4.793

100+ parts

-

1k+ parts

$4.314

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1,970

$4.793

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$4.314

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MKK Technologies

India . 598 parts In-Stock

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$9.013

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598

$9.013

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DigiPath Technology Company

USA . 598 parts In-Stock

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$9.013

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598

$9.013

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Corphita

USA . 4,658 parts In-Stock

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4,658

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Parana Technologies

USA . 423 parts In-Stock

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$5.731

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423

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$5.731

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Kepictronics

USA . 135 parts In-Stock

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Overview

Get ready to experience top-notch quality and reliability with the M48Z12-120PC1 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures that this NON-VOLATILE SRAM offers unmatched performance and durability. Ideal for applications requiring fast access times and low standby currents, this memory IC is perfect for a wide range of commercial uses. Upgrade your systems today with the M48Z12-120PC1 and enjoy the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the SRAM, making it reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this SRAM compatible with a wide range of systems.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this SRAM can withstand heat and operate efficiently in various environments.

Organization: 2KX8

The organization of 2KX8 allows for efficient data storage and retrieval, enhancing the performance of the SRAM.

Technology: CMOS

Using CMOS technology ensures low power consumption and reliable operation in the SRAM.

Memory IC Type: NON-VOLATILE SRAM

Being a non-volatile SRAM, it retains data even when power is turned off, making it suitable for critical applications where data persistence is required.

Maximum Access Time: 120 ns

With a maximum access time of 120 ns, this SRAM provides fast read and write operations, contributing to overall system performance.

Technical Specifications

SRAM M48Z12-120PC1 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

JESD-30 Code:

R-PDIP-T24

JESD-609 Code:

e0

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.003 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

80 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

M48Z12-120PC1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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