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M48Z128Y-85PM1

STMicroelectronics

M48Z128Y-85PM1 by STMicroelectronics

STMicroelectronics' M48Z128Y-85PM1 is a 128Kx8 non-volatile SRAM module with 3-STATE output, operating at 5V. With an access time of 85ns, it's ideal for applications requiring fast and reliable data storage in commercial-grade environments. The rectangular package style and asynchronous operation make it suitable for various microelectronic assemblies.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Vyrian

USA . 8,715 parts In-Stock

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Digiode

USA . 784 parts In-Stock

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Anansix

USA . 133 parts In-Stock

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Nova Conductors

Japan . 96 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 36 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 13 parts In-Stock

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J2 Sourcing AB

Sweden . 10 parts In-Stock

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PC Components Company LLC

USA . 2 parts In-Stock

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Bristol Electronics

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Q Components

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IDEA Electronic Components Group

UK . 2,238 parts In-Stock

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$3.297

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$2.968

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$2.968

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Corohmni

South Africa . 202 parts In-Stock

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$5.277

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Aztec Data Supply Inc.

USA . 238 parts In-Stock

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$5.328

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MKK Technologies

India . 333 parts In-Stock

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$6.200

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DigiPath Technology Company

USA . 333 parts In-Stock

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$6.200

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AZTECH Wire

Italy . 675 parts In-Stock

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$19.028

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Ampacity Inc.

Singapore . 820 parts In-Stock

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Microchip USA

USA . 297 parts In-Stock

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$29.359

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A-Z Elektronik GmbH

Germany . 6,950 parts In-Stock

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Kepictronics

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Alle Elektronik GmbH

Germany . 4,633 parts In-Stock

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Continental Prestige Electronics

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Aranea Global

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Parana Technologies

USA . 719 parts In-Stock

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Argo Parts USA

USA . 656 parts In-Stock

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Advanced Electronics

New Zealand . 450 parts In-Stock

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Corphita

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Cyclops Electronics Ltd (Excess)

UK . 36 parts In-Stock

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Glotronic Ltd.

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Overview

Elevate your electronics with the M48Z128Y-85PM1 from STMicroelectronics, a leading manufacturer in the industry. This SRAM module offers reliable performance, versatility, and innovation for a wide range of applications. With its high-quality design and advanced technology, customers can expect seamless operation and enhanced functionality. Upgrade your devices today with the value and benefits that only STMicroelectronics can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that protects the internal components of the SRAM, ensuring long-term reliability.

Nominal Supply Voltage / Vsup (V): 5

Compatible with common 5V power supplies, making it easy to integrate into existing systems.

Organization: 128KX8

Organized in a 128K x 8 configuration, providing a good balance between storage capacity and access speed.

Output Characteristics: 3-STATE

Supports 3-state outputs, allowing for efficient control of data flow and bus sharing in multi-device systems.

Technology: CMOS

Utilizes CMOS technology, which offers low power consumption, high noise immunity, and compatibility with a wide range of systems.

Memory IC Type: NON-VOLATILE SRAM MODULE

Non-volatile memory ensures that data is retained even when power is removed, making it suitable for applications requiring persistent storage.

Maximum Access Time: 85 ns

Provides fast access times, reducing latency and improving overall system performance.

Technical Specifications

SRAM M48Z128Y-85PM1 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

85 ns

Additional Features:

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

JESD-30 Code:

R-PDMA-P32

JESD-609 Code:

e3

Length:

42.8 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

9.52 mm

Maximum Standby Current:

.004 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

105 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M48Z128Y-85PM1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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