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CY62157ESL-45ZSXI

Infineon Technologies

CY62157ESL-45ZSXI by Infineon Technologies

CY62157ESL-45ZSXI by Infineon Technologies is a 512Kx16 SRAM with 3.6V max supply voltage, 45ns access time, and operates in industrial temperature range. It features common I/O type, 44 terminals in small outline package for parallel applications like networking equipment and industrial automation systems.

Median Price

$9.865

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 485 parts In-Stock

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$9.820

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485

$9.820

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DigiKey

USA . 642 parts In-Stock

1+ parts

$9.840

100+ parts

$8.653

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$7.941

10k+ parts

$7.740

642

$9.840

$8.653

$7.941

$7.740

Newark

USA . 129 parts In-Stock

1+ parts

$9.890

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129

$9.890

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Mouser Electronics

USA . 469 parts In-Stock

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$10.780

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$8.120

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$8.110

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469

$10.780

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$8.110

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Farnell

UK . 99 parts In-Stock

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$13.370

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$8.020

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99

$13.370

$8.020

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Element14

Singapore . 197 parts In-Stock

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$19.640

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$14.400

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Flip Electronics (Authorized)

USA . 13,154 parts In-Stock

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Rochester

USA . 667 parts In-Stock

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$5.840

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$5.230

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$4.920

667

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$5.840

$5.230

$4.920

Verical

USA . 270 parts In-Stock

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$7.300

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$6.537

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$6.150

270

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$7.300

$6.537

$6.150

Distributors (In-Stock)

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Digiode

USA . 900 parts In-Stock

1+ parts

$8.436

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900

$8.436

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Flip Electronics

USA . 4,368 parts In-Stock

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Vyrian

USA . 1,745 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Semi Source

USA . 40 parts In-Stock

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40

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LIBRA Elektronik GmbH

Germany . 37 parts In-Stock

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Pegasus Components GmbH

Germany . 27 parts In-Stock

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Inventory MP

USA . 18 parts In-Stock

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Bristol Electronics

USA . 18 parts In-Stock

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ComSIT Distribution GmbH

Germany . 13 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 60 parts In-Stock

1+ parts

$5.038

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60

$5.038

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Aztec Data Supply Inc.

USA . 1,240 parts In-Stock

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$5.159

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$5.159

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Modulus Dynamics

Lithuania . 184 parts In-Stock

1+ parts

$5.557

100+ parts

$5.335

1k+ parts

$5.112

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184

$5.557

$5.335

$5.112

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Semicontronic

India . 1,421 parts In-Stock

1+ parts

$7.550

100+ parts

$7.361

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$7.324

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$7.550

$7.361

$7.324

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Ampacity Inc.

Singapore . 1,418 parts In-Stock

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$7.550

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Corphita

USA . 413 parts In-Stock

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$7.992

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Continental Prestige Electronics

USA . 515 parts In-Stock

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$9.740

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$7.560

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515

$9.740

$7.560

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Component Stockers USA

USA . 1,692 parts In-Stock

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$12.500

100+ parts

$9.810

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$12.500

$9.810

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QUARKTWIN TECHNOLOGY LTD

USA . 9,985 parts In-Stock

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Microchip USA

USA . 9,886 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,404 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,936 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Argo Parts USA

USA . 805 parts In-Stock

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805

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Perfect Parts

USA . 114 parts In-Stock

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Formix International (Excess)

India . 87 parts In-Stock

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Overview

Elevate your system's performance with the CY62157ESL-45ZSXI from Infineon Technologies, a powerhouse in SRAM technology. Designed for a wide range of applications, this high-quality memory device offers unparalleled reliability and efficiency. With a compact design and industrial-grade temperature tolerance, it guarantees seamless operation even in the most demanding environments. Trust Infineon Technologies to deliver cutting-edge solutions that enhance your product's capabilities and provide exceptional value to your customers. Experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow and control in the transistor.

Configuration: SINGLE

Simplifies circuit design and integration of the transistor.

Minimum DS Breakdown Voltage: 100 V

Ensures reliable operation within a wide range of voltage levels.

Package Shape: ROUND

Facilitates easy installation and mounting of the transistor in various applications.

Operating Mode: ENHANCEMENT MODE

Allows for precise control over the transistor's conductivity and switching characteristics.

Maximum Drain Current (Abs) (ID): 0.45 A

Supports high current handling capability for demanding applications.

No. of Terminals: 3

Simplifies connection and integration into circuits.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high performance and reliable operation in various circuit configurations.

Maximum Operating Temperature: 150 °C

Ensures stable performance even in high-temperature environments.

Transistor Element Material: SILICON

Offers excellent electrical properties and reliability for the transistor.

Terminal Finish: MATTE TIN

Provides a reliable and low-resistance connection for the transistor.

Maximum Drain-Source On Resistance: 1.5 ohm

Ensures minimal power loss and efficient operation of the transistor.

Maximum Feedback Capacitance (Crss): 12 pF

Allows for enhanced high-frequency operation and stability in the transistor.

Technical Specifications

SRAM CY62157ESL-45ZSXI attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

45 ns

Additional Features:

IT ALSO OPERATES AT 5V SUPPLY

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e4

Length:

18.415 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/5

Qualification:

Not Qualified

Maximum Seated Height:

1.194 mm

Maximum Standby Current:

.000005 Amp

Minimum Standby Voltage:

1.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Width:

10.16 mm

Trade Compliance

CY62157ESL-45ZSXI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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