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M48Z2M1V-85PL1

STMicroelectronics

M48Z2M1V-85PL1 by STMicroelectronics

M48Z2M1V-85PL1 by STMicroelectronics is a 2Mx8 non-volatile SRAM with a max access time of 85 ns. It operates asynchronously at a supply voltage of 3.3V and supports temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention, it features a compact in-line package with 36 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,588 parts In-Stock

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Anansix

USA . 960 parts In-Stock

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960

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Digiode

USA . 623 parts In-Stock

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623

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,104 parts In-Stock

1+ parts

$4.528

100+ parts

-

1k+ parts

$4.075

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2,104

$4.528

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$4.075

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MKK Technologies

India . 989 parts In-Stock

1+ parts

$8.515

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989

$8.515

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DigiPath Technology Company

USA . 989 parts In-Stock

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$8.515

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989

$8.515

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AZTECH Wire

Italy . 887 parts In-Stock

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$19.680

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887

$19.680

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QUARKTWIN TECHNOLOGY LTD

USA . 25,544 parts In-Stock

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25,544

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Microchip USA

USA . 4,228 parts In-Stock

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Corphita

USA . 3,658 parts In-Stock

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3,658

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Parana Technologies

USA . 426 parts In-Stock

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$5.414

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426

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$5.414

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Overview

Unlock innovation with the M48Z2M1V-85PL1 from STMicroelectronics, a leader in high-quality semiconductor solutions. This non-volatile SRAM offers exceptional performance for a wide range of applications, ensuring reliable data retention even when powered down. With low power consumption and robust temperature tolerance, it’s perfect for industrial and consumer electronics alike. Elevate your projects with a product that combines reliability, efficiency, and cutting-edge technology—choose the M48Z2M1V-85PL1!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures reliability and protection against environmental factors, making it suitable for various applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient layout in both circuit design and PCB configuration.

Operating Mode: ASYNCHRONOUS

ASYNCHRONOUS operation enables faster data access and simplified interfacing, enhancing performance in real-time applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with a wide range of low-power devices.

Power Supplies (V): 3.3

Utilizing a standardized power supply voltage increases design flexibility and reduces power consumption.

No. of Terminals: 36

The 36-terminal design provides ample connectivity options for various applications, facilitating easy integration into systems.

Package Style (Meter): IN-LINE

The in-line package style is well-suited for assembly and soldering processes, ensuring reliable connections.

Maximum Operating Temperature: 70 °C

Operating at a maximum temperature of 70 °C is suitable for commercial environments, providing reliable performance.

Organization: 2MX8

The 2MX8 organization offers a good balance of capacity and performance, making it ideal for many applications that require moderate memory size.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0 °C, this SRAM is reliable for environments starting from standard room temperature.

Terminal Finish: TIN LEAD

The tin-lead finish provides excellent solderability and resistance to corrosion, ensuring long-term reliability.

Terminal Position: DUAL

The dual terminal position aids in easy mounting and can improve thermal management during operation.

Maximum Seated Height: 9.52 mm

With a maximum seated height of 9.52 mm, this SRAM fits within standard design constraints for compact circuit assemblies.

Width: 15.24 mm

A width of 15.24 mm allows for compact design, saving space on the PCB while still providing sufficient performance.

Minimum Supply Voltage (Vsup): 3 V

The minimum supply voltage of 3V provides flexibility to work with various power sources, ensuring reliability under different conditions.

Length: 52.96 mm

The length of 52.96 mm allows for a balanced footprint on a circuit board while maintaining performance.

Temperature Grade: COMMERCIAL

Rated for commercial temperature, it guarantees performance in typical ambient environments, enhancing usability in most applications.

Technology: CMOS

CMOS technology enables low power consumption and high speed, making this SRAM highly efficient for modern applications.

Parallel or Serial: PARALLEL

Parallel access allows for faster data retrieval, significantly improving reading and writing performance.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and greater ease of handling during assembly.

Maximum Supply Current: 70 mA

The 70 mA maximum supply current indicates efficient power management, suitable for battery-operated devices.

No. of Words: 2097152 words

With 2,097,152 words of capacity, this SRAM meets the requirements of data-intensive applications while managing space efficiently.

Memory Width: 8

An 8-bit memory width allows for easy integration with common microcontrollers and processors.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch suits standard PCB designs, enhancing compatibility with existing systems.

No. of Words Code: 2M

Having a 2M word code indicates a significant amount of data handling capacity suitable for various applications.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V allows for tolerance in power supply variations, ensuring consistent performance.

Memory Density: 16777216 bit

With a memory density of 16,777,216 bits, this SRAM is capable of handling large data sets effectively.

Memory IC Type: NON-VOLATILE SRAM

As a non-volatile SRAM, it retains data without power, making it ideal for applications where data persistence is crucial.

Maximum Standby Current: 0.001 Amp

0.001 Amp of maximum standby current is exceptionally low, making this SRAM ideal for energy-efficient applications.

Maximum Access Time: 85 ns

An access time of 85 ns ensures quick data retrieval, making it suitable for high-speed applications.

Technical Specifications

SRAM M48Z2M1V-85PL1 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-PDIP-T36

JESD-609 Code:

e0

Length:

52.96 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

36

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP36,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

9.52 mm

Maximum Standby Current:

.001 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M48Z2M1V-85PL1 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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