Loading...

M68AW256ML70ZB6

STMicroelectronics

M68AW256ML70ZB6 by STMicroelectronics

M68AW256ML70ZB6 from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at 3V, supports industrial temp ranges (-40 °C to 85 °C), and features a thin profile grid array package. Ideal for high-speed data storage in embedded systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,105 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,105

-

-

-

-

Anansix

USA . 2,359 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,359

-

-

-

-

Digiode

USA . 637 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

637

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,783 parts In-Stock

1+ parts

$5.253

100+ parts

-

1k+ parts

$4.728

10k+ parts

-

1,783

$5.253

-

$4.728

-

Microchip USA

USA . 176 parts In-Stock

1+ parts

$9.493

100+ parts

-

1k+ parts

-

10k+ parts

-

176

$9.493

-

-

-

MKK Technologies

India . 567 parts In-Stock

1+ parts

$9.878

100+ parts

-

1k+ parts

-

10k+ parts

-

567

$9.878

-

-

-

DigiPath Technology Company

USA . 567 parts In-Stock

1+ parts

$9.878

100+ parts

-

1k+ parts

-

10k+ parts

-

567

$9.878

-

-

-

AZTECH Wire

Italy . 401 parts In-Stock

1+ parts

$13.970

100+ parts

-

1k+ parts

-

10k+ parts

-

401

$13.970

-

-

-

A-Z Elektronik GmbH

Germany . 5,939 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,939

-

-

-

-

Alle Elektronik GmbH

Germany . 3,959 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,959

-

-

-

-

Corphita

USA . 3,586 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,586

-

-

-

-

Assy Fe

Spain . 2,993 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,993

-

-

-

-

Parana Technologies

USA . 2,099 parts In-Stock

1+ parts

-

100+ parts

$6.281

1k+ parts

-

10k+ parts

-

2,099

-

$6.281

-

-

Overview

Elevate your designs with the M68AW256ML70ZB6 SRAM from STMicroelectronics—where reliability meets cutting-edge technology. This high-performance memory solution is perfect for industrial applications, offering exceptional speed and low power consumption. With a robust operating temperature range and seamless integration capabilities, it ensures your systems run smoothly under demanding conditions. Trust in STMicroelectronics' legacy of quality to empower your next innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body provides reliability and protection against environmental factors, making this SRAM suitable for various applications.

Surface Mount: YES

Surface mounting allows for a smaller footprint on PCBs, facilitating compact designs for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on the circuit board, enhancing layout efficiency.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster access to data compared to synchronous memories, improving overall system performance.

Input/Output Type: COMMON

A common I/O type simplifies the interfacing with other components, leading to easier integration into designs.

Nominal Supply Voltage / Vsup: 3V

Operating at a nominal voltage of 3V ensures compatibility with many low-power systems, enhancing energy efficiency.

Power Supplies: 3/3.3V

Supports multiple supply voltages, offering flexibility for designers choosing power sources.

No. of Terminals: 48

A higher number of terminals allows for greater connectivity and functionality within the design.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The fine pitch grid array style enables high-density packaging, making it ideal for compact modern electronics.

Maximum Operating Temperature: 85 °C

The capability to operate at high temperatures ensures reliability in demanding environments such as automotive and industrial applications.

Organization: 256KX16

This organization provides a balanced trade-off between memory depth and width, optimizing performance for various applications.

Output Characteristics: 3-STATE

3-state output allows multiple devices to share a single bus, simplifying communication in multi-device systems.

Minimum Standby Voltage: 1.5V

A low standby voltage minimizes power consumption during idle periods, making it suitable for power-sensitive applications.

Minimum Operating Temperature: -40 °C

An extended operating temperature range allows use in harsh environments, increasing design versatility for industrial applications.

Terminal Position: BOTTOM

Bottom terminal positioning enhances mounting options and reduces PCB space requirements, favoring compact designs.

Maximum Seated Height: 1.2mm

The low height profile allows for integration into space-constrained applications without compromising performance.

Width: 7mm

A compact width contributes to the reduced overall dimensions of the PCB, facilitating more efficient designs.

Minimum Supply Voltage (Vsup): 2.7V

The ability to operate at a minimum of 2.7V broadens compatibility with varying power supply configurations.

Length: 8mm

A small length ensures that the SRAM can fit into various compact electronic designs while maintaining performance.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this SRAM ensures reliability and durability in harsh operational conditions.

Technology: CMOS

The CMOS technology contributes to low power consumption while maintaining high-speed performance, ideal for modern applications.

Parallel or Serial: PARALLEL

Parallel access allows for faster data transfer rates compared to serial architectures, optimizing overall system speed.

Terminal Form: BALL

Ball terminals provide better mechanical and electrical connection, reducing the risk of failure in high-density applications.

Maximum Supply Current: 20 mA

Moderate supply current levels allow for efficient power management in battery-operated or power-sensitive devices.

No. of Words: 262144 words

A substantial number of words provides ample storage capacity for various applications requiring high performance.

Memory Width: 16

A memory width of 16 bits allows for handling larger data chunks, optimizing performance in data-heavy applications.

Terminal Pitch: 0.75 mm

A pitch of 0.75 mm enables high-density layouts while still allowing for effective soldering techniques.

No. of Words Code: 256K

This coding implies a significant amount of addressable memory, suitable for extensive data storage needs.

Maximum Supply Voltage (Vsup): 3.6V

The upper limit on supply voltage ensures performance within acceptable parameters for a wide range of power supplies.

Memory Density: 4194304 bit

High memory density allows for more data to be stored within a small physical area, enhancing design flexibility.

Memory IC Type: STANDARD SRAM

As a standard SRAM, it is readily available and commonly understood, making integration straightforward for engineers.

Maximum Standby Current: 0.000009 Amp

Extremely low standby current minimizes energy consumption when not in use, benefiting battery-operated applications.

Maximum Access Time: 70 ns

A maximum access time of 70 ns ensures quick data retrieval, which is critical for high-performance applications.

Technical Specifications

SRAM M68AW256ML70ZB6 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

8 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000009 Amp

Minimum Standby Voltage:

1.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

7 mm

Trade Compliance

M68AW256ML70ZB6 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20