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M68AF031AL55N6F

STMicroelectronics

M68AF031AL55N6F by STMicroelectronics

M68AF031AL55N6F from STMicroelectronics is a 32Kx8 CMOS SRAM with asynchronous operation and a max access time of 55 ns. It operates at a nominal voltage of 5V, suitable for industrial applications. Its compact SOIC package ensures efficient space utilization in electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,969 parts In-Stock

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4,969

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Vyrian

USA . 4,447 parts In-Stock

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4,447

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Anansix

USA . 1,674 parts In-Stock

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1,674

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,469 parts In-Stock

1+ parts

$5.434

100+ parts

-

1k+ parts

$4.891

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1,469

$5.434

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$4.891

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MKK Technologies

India . 697 parts In-Stock

1+ parts

$10.219

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697

$10.219

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DigiPath Technology Company

USA . 697 parts In-Stock

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$10.219

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697

$10.219

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Corphita

USA . 4,225 parts In-Stock

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4,225

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Parana Technologies

USA . 1,190 parts In-Stock

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$6.498

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1,190

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$6.498

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Overview

Experience unmatched reliability with the M68AF031AL55N6F SRAM from STMicroelectronics, a trusted leader in semiconductor innovation. This versatile memory solution excels in industrial applications, delivering fast access times and low power consumption—perfect for demanding environments. With its compact design and robust performance, it empowers your projects, ensuring seamless data handling and enhanced efficiency. Choose quality, choose ST!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and thermal stability, making it suitable for various applications.

Surface Mount: YES

The surface mount design allows for efficient space utilization and easy integration into modern circuit designs.

Package Shape: RECTANGULAR

The rectangular shape facilitates better layout options on the PCB and improves overall assembly efficiency.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster access times, leading to improved performance in applications where speed is critical.

Input/Output Type: COMMON

Common I/O configuration simplifies integration into existing systems and reduces design complexity.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V is compatible with a wide range of standard electronics, enhancing its versatility.

Power Supplies (V): 5

Operates on a standard power supply, making it easy to incorporate into various devices without the need for special power configurations.

No. of Terminals: 28

28 terminals provide ample connectivity options for integrating with other components in a system.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline, thin profile design improves space efficiency and allows for compact designs in modern electronics.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C makes this SRAM suitable for industrial applications that require reliable operation under moderate heat.

Organization: 32KX8

The 32Kx8 organization provides a good balance of memory density and access speed, ideal for embedded systems.

Output Characteristics: 3-STATE

3-state output characteristics enable easier bus sharing among multiple devices, enhancing system efficiency.

Minimum Standby Voltage: 2 V

A minimum standby voltage of 2V allows for lower power consumption during idle times, contributing to energy efficiency.

Minimum Operating Temperature: -40 °C

Capabilities for low operating temperatures make this SRAM suitable for applications in harsh environments.

Terminal Finish: TIN/TIN BISMUTH

Tin/tin bismuth finish provides excellent solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: DUAL

Dual terminal positioning simplifies PCB layout and supports better electrical performance.

Maximum Seated Height: 1.2 mm

A low seated height allows for easy mounting and integration in compact electronic designs.

Width: 8 mm

A width of 8 mm enables space-efficient designs while still accommodating necessary connections.

Minimum Supply Voltage (Vsup): 4.5 V

The range of supply voltage from 4.5V ensures compatibility with diverse power supply options.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C supports modern soldering processes and enhances assembly compatibility.

Length: 11.8 mm

A compact length of 11.8 mm allows for more efficient use of PCB real estate.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliability and consistent performance in demanding environments.

Technology: CMOS

CMOS technology provides low power consumption and high density, making it ideal for portable and battery-operated devices.

Parallel or Serial: PARALLEL

Parallel processing capabilities enhance data access speeds and improve overall system performance.

Terminal Form: GULL WING

Gull wing terminals facilitate easier handling and soldering in automated assembly processes.

Maximum Supply Current: 50 mA

A maximum supply current of 50mA allows for sufficient performance in various applications without drawing excessive power.

No. of Words: 32768 words

With 32K words, this SRAM provides substantial storage capacity for mid-range applications.

Memory Width: 8

An 8-bit memory width aligns with many standard applications, ensuring compatibility with most systems.

Terminal Pitch: 0.55 mm

A 0.55 mm terminal pitch allows for efficient routing on modern PCBs while maintaining a compact footprint.

No. of Words Code: 32K

The 32K word code offers reliable memory configuration options for various embedded applications.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5V provides design flexibility and prevents damage from voltage spikes.

Memory Density: 262144 bit

A density of 262144 bits is ideal for a wide range of applications, enabling efficient data storage without sacrificing access speed.

Memory IC Type: STANDARD SRAM

As a standard SRAM, it delivers predictable performance characteristics making it suitable for a variety of traditional applications.

Maximum Standby Current: 0.000006 Amp

Low standby current minimizes power consumption during inactive periods, supporting energy-efficient designs.

Maximum Access Time: 55 ns

An access time of 55 ns offers excellent read/write speeds, ensuring responsive performance in high-speed applications.

Technical Specifications

SRAM M68AF031AL55N6F attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e3/e6

Length:

11.8 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP28,.53,22

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.55 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8 mm

Trade Compliance

M68AF031AL55N6F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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