Loading...

M68AF031AL55B1E

STMicroelectronics

M68AF031AL55B1E by STMicroelectronics

M68AF031AL55B1E from STMicroelectronics is a 32Kx8 asynchronous SRAM with a 5V supply, ideal for high-speed applications. It features a max access time of 55 ns and operates within -40 °C to 70 °C. This dual in-line package (DIP) is perfect for commercial use in embedded systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,796 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,796

-

-

-

-

Vyrian

USA . 2,474 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,474

-

-

-

-

Anansix

USA . 1,179 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,179

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 11 parts In-Stock

1+ parts

$4.058

100+ parts

-

1k+ parts

$3.652

10k+ parts

-

11

$4.058

-

$3.652

-

MKK Technologies

India . 49 parts In-Stock

1+ parts

$7.631

100+ parts

-

1k+ parts

-

10k+ parts

-

49

$7.631

-

-

-

DigiPath Technology Company

USA . 49 parts In-Stock

1+ parts

$7.631

100+ parts

-

1k+ parts

-

10k+ parts

-

49

$7.631

-

-

-

Corphita

USA . 2,632 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,632

-

-

-

-

Parana Technologies

USA . 127 parts In-Stock

1+ parts

-

100+ parts

$4.852

1k+ parts

-

10k+ parts

-

127

-

$4.852

-

-

Overview

Unlock unparalleled performance with the M68AF031AL55B1E SRAM from STMicroelectronics, renowned for its superior quality and reliability. This asynchronous memory solution delivers swift data access and robust efficiency, making it perfect for a wide range of applications, from industrial automation to telecommunications. Experience unmatched durability and advanced technology that not only enhances your systems but also drives innovation, ensuring you stay ahead in today's competitive landscape.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making it suitable for various applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on the PCB, making it easier to integrate into compact designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster data access without needing clock synchronization, simplifying system design.

Input/Output Type: COMMON

Common I/O type facilitates easier connections and reduces the complexity of the circuit design.

Nominal Supply Voltage / Vsup: 5V

Operating at a nominal voltage of 5V is standard in many applications, ensuring compatibility with common power supplies.

Power Supplies (V): 5V

Single voltage supply enhances system simplicity and reduces the need for multiple power regulators.

No. of Terminals: 28

A sufficient number of terminals allows for versatile connections while maintaining a compact footprint.

Package Style (Meter): IN-LINE

In-line package style simplifies assembly and provides a streamlined layout for circuit boards.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliable performance in various environmental conditions.

Organization: 32KX8

The 32K x 8 organization provides a good balance of storage capacity and data width for typical applications.

Output Characteristics: 3-STATE

3-state outputs allow multiple devices to share the same data bus, reducing board space and improving system flexibility.

Minimum Standby Voltage: 2V

A low minimum standby voltage allows for power saving modes, extending battery life in portable devices.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0 °C makes it suitable for a range of environments, including indoor and certain outdoor applications.

Terminal Finish: MATTE TIN

Matte tin finish improves solderability and enhances the reliability of electrical connections.

Terminal Position: DUAL

Dual terminal positioning provides a stable connection and better mechanical strength on the PCB.

Maximum Seated Height: 5.08 mm

A low seated height allows for the use in compact designs where vertical space is limited.

Width: 15.24 mm

Compact width enhances the ability to fit multiple components in limited space, aiding in designing smaller devices.

Minimum Supply Voltage (Vsup): 4.5V

Allows flexibility in power supply design, accommodating a range of applications and systems.

Length: 37.085 mm

Length dimensions optimize fitting in standard PCB layouts, enhancing compatibility with existing designs.

Temperature Grade: COMMERCIAL

Commercial grade ensures reliability for general consumer electronics and non-critical applications.

Technology: CMOS

CMOS technology ensures low power consumption, making this SRAM suitable for battery-powered devices.

Parallel or Serial: PARALLEL

Parallel operation allows for higher data transfer rates, making it ideal for high-speed applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide increased mechanical strength and ease of handling during assembly.

Maximum Supply Current: 50 mA

A moderate current rating ensures efficient operation while remaining energy-efficient across various applications.

No. of Words: 32768 words

A large word count enables substantial data storage, catering to applications requiring significant memory.

Memory Width: 8

An 8-bit memory width is standard for many applications, offering a balance between performance and complexity.

Terminal Pitch: 2.54 mm

A standard terminal pitch simplifies PCB layout and compatibility with other components.

No. of Words Code: 32K

32K words provides a well-rounded memory capacity suitable for various uses, from consumer electronics to embedded systems.

Maximum Supply Voltage (Vsup): 5.5V

A max supply voltage of 5.5V allows for a margin of safety in voltage supply, accommodating variations in power systems.

Memory Density: 262144 bit

High memory density offers improved data storage capabilities, useful for data-intensive applications.

Memory IC Type: STANDARD SRAM

Being a standard SRAM makes it widely compatible and easy to integrate into existing systems.

Maximum Standby Current: 0.000006 Amp

Extremely low standby current significantly reduces power consumption in idle states, making it ideal for battery-operated devices.

Maximum Access Time: 55 ns

Fast access time ensures efficient performance and responsiveness essential for high-speed applications.

Technical Specifications

SRAM M68AF031AL55B1E attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T28

JESD-609 Code:

e3

Length:

37.085 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M68AF031AL55B1E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19