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M68AF031AL55B6E

STMicroelectronics

M68AF031AL55B6E by STMicroelectronics

M68AF031AL55B6E from STMicroelectronics is a 32Kx8 asynchronous SRAM with a max access time of 55 ns. It operates at a nominal voltage of 5V and supports industrial temp ranges (-40 °C to 85 °C). Ideal for applications requiring fast, reliable memory in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,244 parts In-Stock

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4,244

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Digiode

USA . 3,979 parts In-Stock

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3,979

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Anansix

USA . 1,691 parts In-Stock

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1,691

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 127 parts In-Stock

1+ parts

$3.781

100+ parts

-

1k+ parts

$3.403

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127

$3.781

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$3.403

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MKK Technologies

India . 321 parts In-Stock

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$7.110

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321

$7.110

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DigiPath Technology Company

USA . 321 parts In-Stock

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$7.110

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321

$7.110

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Parana Technologies

USA . 2,079 parts In-Stock

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$4.521

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2,079

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$4.521

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Corphita

USA . 393 parts In-Stock

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393

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Overview

Elevate your designs with the M68AF031AL55B6E SRAM from STMicroelectronics, a leader in innovation and reliability. This asynchronous memory solution combines exceptional performance with robust quality, perfect for industrial applications requiring dependable data storage. Enjoy the benefits of low power consumption, wide temperature range, and ease of integration, ensuring your projects run efficiently and effectively—empowering you to create the next big thing with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures a lightweight and robust construction, enhancing the product's reliability.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on printed circuit boards (PCBs), facilitating design flexibility.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster data access and easier interfacing with various systems, making it suitable for diverse applications.

Input/Output Type: COMMON

Common I/O simplifies integration with other devices, reducing design complexity.

Nominal Supply Voltage / Vsup: 5 V

Operating at a nominal 5V makes it compatible with a wide range of electronic circuits and microcontrollers.

Power Supplies (V): 5

This product supports a single power supply voltage of 5V, simplifying power management in designs.

No. of Terminals: 28

With 28 terminals, it offers sufficient connectivity options for a variety of applications.

Package Style (Meter): IN-LINE

The in-line package style is conducive for PCB layout, helping to maintain efficient routing and design layout.

Maximum Operating Temperature: 85 °C

Operating at up to 85 °C allows for reliability in industrial settings, where temperature variations are common.

Organization: 32KX8

The 32Kx8 organization provides a balance of capacity and performance, suitable for a wide range of applications.

Output Characteristics: 3-STATE

3-state output characteristics facilitate easier data bus control, promoting efficient multitasking in data handling.

Minimum Standby Voltage: 2 V

A low standby voltage requirement helps in reducing power consumption during idle periods, extending device life.

Minimum Operating Temperature: -40 °C

The ability to operate down to -40 °C makes this SRAM suitable for extreme environments and applications.

Terminal Finish: MATTE TIN

Matte tin finish provides improved wear resistance and solderability, ensuring reliable connections in electronics.

Terminal Position: DUAL

Dual terminal positioning enhances stability during soldering and assembly processes.

Maximum Seated Height: 5.08 mm

A low seated height enables better compatibility with compact designs without compromising performance.

Width: 15.24 mm

The width is designed for efficient layout on PCBs while ensuring ample contact area for connections.

Minimum Supply Voltage (Vsup): 4.5 V

A lower minimum supply voltage flexibility allows operation in a wider range of power supply designs.

Length: 37.085 mm

The length of the package optimizes layouts, balancing performance and space considerations on PCB.

Temperature Grade: INDUSTRIAL

Industrial temperature grade guarantees performance reliability in demanding environments.

Technology: CMOS

CMOS technology leads to lower power consumption and high-speed operation, making it efficient for various applications.

Parallel or Serial: PARALLEL

The parallel operation mode offers high-speed data accessibility, crucial for performance-sensitive applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide solid connections, ideal for high integrity and durable applications.

Maximum Supply Current: 50 mA

The relatively low maximum supply current aids in power management in battery-operated devices.

No. of Words: 32768 words

With 32K words, it meets the memory requirements for many intermediate data applications.

Memory Width: 8

An 8-bit memory width aligns with common microcontroller data widths for simplified integration.

Terminal Pitch: 2.54 mm

The 2.54 mm pitch is standard, ensuring compatibility with various PCB layouts and components.

No. of Words Code: 32K

The 32K words code offers robust capacity for memory-intensive applications while maintaining high-speed access.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage capability ensures compatibility with various power supply designs without risk of damage.

Memory Density: 262144 bit

A density of 262144 bits allows for adequate data storage for many applications, striking a good balance between size and performance.

Memory IC Type: STANDARD SRAM

As a standard SRAM, it integrates easily into various applications requiring fast, volatile memory access.

Maximum Standby Current: 0.000006 Amp

Very low standby current helps conserve power during inactive periods, making it suitable for energy-sensitive designs.

Maximum Access Time: 55 ns

With a maximum access time of 55 ns, it provides quick data retrieval, critical for time-sensitive applications.

Technical Specifications

SRAM M68AF031AL55B6E attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T28

JESD-609 Code:

e3

Length:

37.085 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M68AF031AL55B6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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