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M68AF031AL55MS1F

STMicroelectronics

M68AF031AL55MS1F by STMicroelectronics

M68AF031AL55MS1F from STMicroelectronics is a 32Kx8 asynchronous SRAM with a 5V supply, ideal for high-speed applications. It features a max access time of 55 ns and operates within -40 °C to 70 °C. This compact, surface-mount device ensures efficient data storage in various electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,247 parts In-Stock

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Vyrian

USA . 4,105 parts In-Stock

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4,105

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Anansix

USA . 317 parts In-Stock

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317

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IDEA Electronic Components Group

UK . 1,069 parts In-Stock

1+ parts

$4.836

100+ parts

-

1k+ parts

$4.353

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1,069

$4.836

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MKK Technologies

India . 217 parts In-Stock

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$9.095

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DigiPath Technology Company

USA . 217 parts In-Stock

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$9.095

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217

$9.095

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Parana Technologies

USA . 2,358 parts In-Stock

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$5.783

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$5.783

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Corphita

USA . 623 parts In-Stock

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Overview

Unlock unparalleled performance with the M68AF031AL55MS1F SRAM from STMicroelectronics. Renowned for its exceptional quality and reliability, this asynchronous memory solution is perfect for a wide range of applications, from consumer electronics to industrial automation. Experience rapid access times and low power consumption, ensuring your designs remain efficient and competitive. Trust in STMicroelectronics' legacy of innovation to elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials enhances durability and protection from environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for a compact design and easy integration into modern electronic circuits, saving space on PCBs.

Package Shape: RECTANGULAR

The rectangular shape optimizes space usage in circuit boards and simplifies placement during assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides easier control and interfacing with other digital circuits, allowing immediate data access.

Input/Output Type: COMMON

Common I/O types improve flexibility in circuit designs and simplify the connection to external components.

Nominal Supply Voltage / Vsup: 5V

Operating at a standard 5V supply voltage makes this SRAM compatible with many existing systems and easy to implement.

Power Supplies: 5V

A single power supply requirement streamlines the design process for electronic devices, reducing complexity.

No. of Terminals: 28

With 28 terminals, the device provides ample connectivity options, enhancing its versatility for various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes space requirements on printed circuit boards (PCBs), enabling denser layouts.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliability in a wide range of environmental conditions.

Organization: 32KX8

The 32K x 8 organization allows for efficient data management in applications requiring substantial memory.

Output Characteristics: 3-STATE

3-state outputs provide flexibility in bus architectures, allowing multiple devices to connect without conflict.

Minimum Standby Voltage: 2V

Lower standby voltage enhances power efficiency, making it suitable for battery-operated devices.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C allows for functionality in a variety of environments, including slightly colder climates.

Terminal Position: DUAL

The dual terminal position enables efficient layout designs, accommodating various PCB designs.

Maximum Seated Height: 2.79mm

A low seated height is beneficial for tight spaces in electronic designs, ensuring compatibility with compact devices.

Width: 7.505mm

A moderate width contributes to space-saving designs while maintaining easy handling and soldering.

Minimum Supply Voltage (Vsup): 4.5V

A minimum supply voltage of 4.5V allows for more flexibility in different applications and environments.

Peak Reflow Temperature: 260 °C

The capability to withstand high reflow temperatures makes it suitable for lead-free soldering processes.

Length: 18.22mm

A compact length facilitates integration into space-constrained designs without compromising functionality.

Temperature Grade: COMMERCIAL

Commercial temperature grading ensures decent performance in typical operating conditions, ideal for consumer electronics.

Technology: CMOS

CMOS technology offers low power consumption and high-speed performance, making it energy efficient.

Parallel or Serial: PARALLEL

Parallel access allows simultaneous data transmission, which is beneficial for high-performance applications.

Terminal Form: GULL WING

Gull wing terminals provide excellent solder joint reliability and facilitate easy handling during assembly.

Maximum Supply Current: 50mA

With a maximum supply current of 50mA, it ensures the ability to handle demanding applications without overheating.

No. of Words: 32768 words

A memory capacity of 32,768 words makes it ideal for applications requiring moderate data storage.

Memory Width: 8

An 8-bit memory width strikes a balance between speed and efficiency for typical data processing needs.

Terminal Pitch: 1.27mm

A terminal pitch of 1.27mm supports high-density designs while ensuring reliable connectivity.

No. of Words Code: 32K

Supporting 32K of words means this SRAM can effectively meet the demands of various embedded applications.

Maximum Supply Voltage (Vsup): 5.5V

A maximum supply voltage capability of 5.5V ensures compatibility with a wide range of power sources.

Memory Density: 262144 bit

A memory density of 262,144 bits makes this SRAM suitable for applications requiring higher capacity in a smaller footprint.

Memory IC Type: STANDARD SRAM

Being a standard SRAM type ensures ease of integration with most systems and familiarity for engineers.

Maximum Standby Current: 0.000006 Amp

Minimal standby current enhances energy efficiency, making it suitable for devices that prioritize power savings.

Maximum Access Time: 55 ns

Fast access time of 55 ns allows for quick data retrieval, ideal for high-speed applications.

Technical Specifications

SRAM M68AF031AL55MS1F attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

Length:

18.22 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.5

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.505 mm

Trade Compliance

M68AF031AL55MS1F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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