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M68AF031AL55N6

STMicroelectronics

M68AF031AL55N6 by STMicroelectronics

M68AF031AL55N6 from STMicroelectronics is a 32Kx8 asynchronous SRAM with a 5V supply, ideal for industrial applications. It features a max access time of 55 ns and operates in temperatures from -40 °C to 85 °C. Its compact SOIC package ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,819 parts In-Stock

1+ parts

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100+ parts

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1,819

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Digiode

USA . 1,069 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,069

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Anansix

USA . 895 parts In-Stock

1+ parts

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895

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,378 parts In-Stock

1+ parts

$4.064

100+ parts

-

1k+ parts

$3.657

10k+ parts

-

1,378

$4.064

-

$3.657

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MKK Technologies

India . 2,137 parts In-Stock

1+ parts

$7.641

100+ parts

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10k+ parts

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2,137

$7.641

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DigiPath Technology Company

USA . 2,137 parts In-Stock

1+ parts

$7.641

100+ parts

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10k+ parts

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2,137

$7.641

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Corphita

USA . 3,430 parts In-Stock

1+ parts

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3,430

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Parana Technologies

USA . 1,538 parts In-Stock

1+ parts

-

100+ parts

$4.859

1k+ parts

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10k+ parts

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1,538

-

$4.859

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Overview

Unlock unparalleled performance with the M68AF031AL55N6 SRAM from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for demanding applications, this high-quality asynchronous memory chip delivers reliability and efficiency, making it perfect for industrial systems, automotive electronics, and consumer devices. With its compact profile and robust temperature range, enjoy faster access times and lower power consumption, empowering your designs to excel while ensuring long-lasting reliability. Choose STMicroelectronics for unmatched quality and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and is suitable for various environmental conditions, making it reliable for industrial applications.

Surface Mount: YES

The surface mount capability allows for compact PCB designs, saving space and enabling high-density applications.

Package Shape: RECTANGULAR

The rectangular shape is optimal for efficient space utilization on circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in timing, allowing for simpler control in various applications.

Input/Output Type: COMMON

Common I/O type simplifies integration within existing systems, enhancing compatibility.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V is standard in many applications, ensuring broad usability.

Power Supplies (V): 5

Standardizing on a 5V power supply minimizes the need for voltage regulation circuits.

No. of Terminals: 28

28 terminals provide ample connectivity options, supporting diverse configurations.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline, thin profile design aids in making slimmer device designs.

Maximum Operating Temperature: 85 °C

An operating temperature of up to 85 °C allows the SRAM to function in demanding environments.

Organization: 32KX8

A 32Kx8 organization provides a balance of storage capacity and access speed, making it ideal for various applications.

Output Characteristics: 3-STATE

The 3-state output allows for better bus management, enabling multiple devices to share the same data lines.

Minimum Standby Voltage: 2 V

A minimum standby voltage of 2V helps to conserve power when the device is not in active use.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C ensures reliable performance in harsh environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and surface integrity for long-lasting connections.

Terminal Position: DUAL

Dual terminal positions simplify PCB design and layout while providing flexibility in assembly.

Maximum Seated Height: 1.2 mm

The low seated height minimizes the overall product profile, which is ideal for space-constrained applications.

Width: 8 mm

An 8mm width allows for compact designs without sacrificing performance.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage of 4.5V ensures operation under various power supply conditions.

Length: 11.8 mm

The length of 11.8 mm helps support a compact form factor for tight layouts.

Temperature Grade: INDUSTRIAL

An industrial temperature grade signifies robust performance in challenging environments, making this SRAM suitable for critical applications.

Technology: CMOS

The use of CMOS technology allows for lower power consumption and higher densities, which enhances efficiency.

Parallel or Serial: PARALLEL

Parallel architecture provides faster data access, ideal for applications requiring high-speed memory.

Terminal Form: GULL WING

Gull wing terminals enhance soldering reliability and are easier to handle during assembly.

Maximum Supply Current: 50 mA

A maximum supply current of 50 mA is efficient for powering various applications without excess power drain.

No. of Words: 32768 words

A memory capacity of 32,768 words provides substantial storage for a variety of data types.

Memory Width: 8

An 8-bit memory width matches many standard applications, facilitating easy data handling.

Terminal Pitch: 0.55 mm

The 0.55 mm terminal pitch allows for high-density layouts, making it suitable for modern, miniaturized designs.

No. of Words Code: 32K

A word count of 32K makes this SRAM ideal for applications that require moderate memory size.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V provides headroom for voltage fluctuations, ensuring stable operation.

Memory Density: 262144 bit

A memory density of 262,144 bits makes this SRAM suitable for a wide range of applications needing reliable data storage.

Memory IC Type: STANDARD SRAM

As a standard SRAM type, it guarantees compatibility and ease of use in conventional digital circuits.

Maximum Standby Current: 0.000006 Amp

A very low maximum standby current ensures minimal power consumption, crucial for battery-operated devices.

Maximum Access Time: 55 ns

An access time of 55 ns provides quick data retrieval, making this SRAM suitable for high-speed applications.

Technical Specifications

SRAM M68AF031AL55N6 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP28,.53,22

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.55 mm

Terminal Position:

DUAL

Width:

8 mm

Trade Compliance

M68AF031AL55N6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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