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M68AF031AL55MS1T

STMicroelectronics

M68AF031AL55MS1T by STMicroelectronics

M68AF031AL55MS1T from STMicroelectronics is a 32Kx8 asynchronous SRAM with a 5V supply, ideal for high-speed applications. It features a max access time of 55 ns and operates within -40 °C to 70 °C. This compact, surface-mount device ensures efficient data storage in various electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,537 parts In-Stock

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Anansix

USA . 1,017 parts In-Stock

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Vyrian

USA . 637 parts In-Stock

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IDEA Electronic Components Group

UK . 591 parts In-Stock

1+ parts

$3.635

100+ parts

-

1k+ parts

$3.271

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591

$3.635

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$3.271

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MKK Technologies

India . 706 parts In-Stock

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$6.835

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706

$6.835

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DigiPath Technology Company

USA . 706 parts In-Stock

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$6.835

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706

$6.835

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Corphita

USA . 1,747 parts In-Stock

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Parana Technologies

USA . 181 parts In-Stock

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$4.346

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181

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$4.346

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Overview

Elevate your designs with the M68AF031AL55MS1T SRAM from STMicroelectronics, a trusted leader in semiconductor innovation. Engineered for high performance, this versatile memory solution ensures fast and reliable data access, perfect for a range of applications including consumer electronics, automotive systems, and industrial controls. With its compact design and low power consumption, you gain efficiency and durability—unlocking seamless integration while enhancing your product's overall reliability and responsiveness.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and protection for the internal components, ensuring the reliability of the SRAM in various applications.

Surface Mount: YES

Surface mount technology allows for compact designs and higher integration in modern electronic circuits, making the SRAM suitable for space-constrained applications.

Package Shape: RECTANGULAR

The rectangular shape provides efficient board space utilization, allowing for a more organized layout in electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster access times without the need for a clock signal, providing quicker data retrieval and better performance.

Input/Output Type: COMMON

Common input/output type facilitates versatile interfacing with other components in the system, simplifying design and integration.

Nominal Supply Voltage / Vsup (V): 5

With a nominal supply voltage of 5V, this SRAM is compatible with a wide range of existing systems and components, making it easy to integrate.

Power Supplies (V): 5

Single power supply requirement simplifies the design and reduces the complexity of power management in the circuit.

No. of Terminals: 28

A 28-terminal configuration offers ample connectivity options while maintaining a compact footprint.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports higher circuit density and is ideal for space-limited applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this SRAM is suitable for a wide range of commercial applications without overheating issues.

Organization: 32KX8

The 32Kx8 organization allows for efficient memory utilization, providing a good balance of storage capacity and accessibility.

Output Characteristics: 3-STATE

3-state output capability helps in effective bus management, allowing multiple devices to share the same data lines without conflicts.

Minimum Standby Voltage: 2 V

Low standby voltage ensures minimal power consumption, enhancing energy efficiency in low-power applications.

Minimum Operating Temperature: 0 °C

Operating down to 0 °C ensures functionality in a variety of environmental conditions, expanding its usability across different applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and enhances the durability of the connection, ensuring longer operational life.

Terminal Position: DUAL

Dual terminal position allows for flexible routing on the PCB, improving design options for engineers.

Maximum Seated Height: 2.79 mm

Low seated height aids in maintaining a slim profile for the PCB assembly, ideal for modern design trends.

Width: 7.505 mm

Narrow width helps in fitting into tighter spaces on circuit boards, enhancing design flexibility.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage requirement starting at 4.5V provides a wide operational range while ensuring stable performance.

Length: 18.22 mm

Compact length fits well in various design layouts, further optimizing circuit space.

Temperature Grade: COMMERCIAL

Commercial-grade components are suited for general use, offering reliability at a reasonable cost for many applications.

Technology: CMOS

CMOS technology ensures low power consumption while delivering high-speed performance, making it ideal for portable and low-power devices.

Parallel or Serial: PARALLEL

Parallel architecture allows for faster data access and processing, enhancing system performance for memory-intensive tasks.

Terminal Form: GULL WING

Gull wing terminals promote easier soldering and assembly processes, ensuring a reliable connection to the PCB.

Maximum Supply Current: 50 mA

A maximum supply current of 50 mA indicates efficient power usage, which is essential for battery-operated devices.

No. of Words: 32768 words

The capability to store 32,768 words allows for substantial data handling in various applications, making this SRAM versatile.

Memory Width: 8

An 8-bit memory width is standard for consistency and compatibility with a wide range of digital processing systems.

Terminal Pitch: 1.27 mm

1.27 mm terminal pitch strikes a balance between easy handling during assembly and compact design, making it a practical choice.

No. of Words Code: 32K

Having a recognized 32K words coding facilitates easier integration and communication within established systems.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V provides operational flexibility, accommodating various power supply designs.

Memory Density: 262144 bit

A memory density of 262,144 bits offers significant data storage capability, meeting the needs of diverse applications.

Memory IC Type: STANDARD SRAM

Being a standard SRAM type means compatibility with the majority of existing systems, enhancing its utility.

Maximum Standby Current: 0.000006 Amp

A maximum standby current of just 6 microamps ensures extremely low power consumption during inactive periods, beneficial for battery-powered devices.

Maximum Access Time: 55 ns

With a maximum access time of 55 nanoseconds, this SRAM provides fast data retrieval essential for high-performance applications.

Technical Specifications

SRAM M68AF031AL55MS1T attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e3

Length:

18.22 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.5

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.505 mm

Trade Compliance

M68AF031AL55MS1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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