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M68AF031AL55N1E

STMicroelectronics

M68AF031AL55N1E by STMicroelectronics

M68AF031AL55N1E by STMicroelectronics is a 32Kx8 asynchronous SRAM with a 5V supply, ideal for high-speed applications. It features a max access time of 55 ns and operates within -40 °C to 70 °C. Its compact SOIC package ensures efficient space utilization in electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,053 parts In-Stock

1+ parts

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2,053

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Digiode

USA . 1,332 parts In-Stock

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1,332

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Anansix

USA . 193 parts In-Stock

1+ parts

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193

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,487 parts In-Stock

1+ parts

$3.463

100+ parts

-

1k+ parts

$3.117

10k+ parts

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1,487

$3.463

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$3.117

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MKK Technologies

India . 2,253 parts In-Stock

1+ parts

$6.512

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2,253

$6.512

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DigiPath Technology Company

USA . 2,253 parts In-Stock

1+ parts

$6.512

100+ parts

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2,253

$6.512

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Corphita

USA . 2,289 parts In-Stock

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2,289

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Parana Technologies

USA . 343 parts In-Stock

1+ parts

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$4.140

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343

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$4.140

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Overview

Unlock unparalleled performance and reliability with the M68AF031AL55N1E SRAM from STMicroelectronics! Renowned for their innovation, STMicroelectronics ensures top-tier quality in every chip. This versatile memory solution supports a wide range of applications, enhancing your designs with fast access speeds and low power consumption. Experience seamless integration and improved efficiency, making it the ideal choice for your next project. Elevate your technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material ensures long-term reliability and protection against environmental factors.

Surface Mount: YES

Surface mount technology allows for more efficient use of board space and enhances performance in high-density applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes layout and integration into electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies design and enhances performance by allowing faster data access.

Input/Output Type: COMMON

Common input/output configuration facilitates easier integration into various circuits.

Nominal Supply Voltage / Vsup: 5 V

A 5V nominal supply voltage is standard, making it compatible with a wide range of devices.

Power Supplies (V): 5

Utilizing a 5V power supply enhances compatibility and integration with existing electronic systems.

No. of Terminals: 28

A 28-terminal configuration provides ample connectivity options for diverse applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline, thin profile design is optimal for space-constrained applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this SRAM can function reliably in a variety of environments.

Organization: 32KX8

The 32KX8 organization offers high-density data storage, making it suitable for applications requiring significant memory.

Output Characteristics: 3-STATE

3-state output characteristics enable more flexible data handling and signal management in circuits.

Minimum Standby Voltage: 2 V

A minimum standby voltage of 2 V offers energy efficiency during idle states.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C ensures usability in a range of standard operating conditions.

Terminal Finish: TIN/TIN BISMUTH

The tin/tin bismuth finish provides excellent solderability and corrosion resistance for better performance.

Terminal Position: DUAL

Dual terminal positioning allows for flexible integration into various PCB layouts.

Maximum Seated Height: 1.2 mm

A maximum seated height of 1.2 mm keeps the component low-profile, facilitating easier stacking of components.

Width: 8 mm

An 8 mm width contributes to space efficiency while maintaining necessary signal integrity.

Minimum Supply Voltage (Vsup): 4.5 V

Flexibility in supply voltage down to 4.5 V allows for a broader range of system compatibility.

Peak Reflow Temperature: 260 °C

A peak reflow temperature of 260 °C ensures reliable manufacturing processes and thermal stability.

Length: 11.8 mm

Compact length of 11.8 mm is ideal for small electronic applications, ensuring adaptability.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures suitability for general use in consumer electronics.

Technology: CMOS

CMOS technology enables lower power consumption and higher speed, making it efficient for modern applications.

Parallel or Serial: PARALLEL

Parallel interface allows for faster data transfer rates compared to serial options, enhancing performance.

Terminal Form: GULL WING

Gull wing terminals simplify soldering and increase reliability for long-term use.

Maximum Supply Current: 50 mA

A maximum supply current of 50 mA ensures adequate performance without excessive power draw.

No. of Words: 32768 words

With 32,768 words, this SRAM offers significant storage capacity for complex applications.

Memory Width: 8

An 8-bit memory width is ideal for efficiently handling standard data types in various applications.

Terminal Pitch: 0.55 mm

A 0.55 mm terminal pitch contributes to compact designs while maintaining solder connectivity.

No. of Words Code: 32K

The 32K words code provides substantial capacity for applications requiring substantial data storage.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5 V grants flexibility in operation, ensuring compatibility with power supply variations.

Memory Density: 262144 bit

A memory density of 262,144 bits offers vast storage, making it suitable for demanding applications.

Memory IC Type: STANDARD SRAM

Standard SRAM type ensures ease of integration and proven reliability in various electronic devices.

Maximum Standby Current: 0.000006 Amp

A maximum standby current of 6 µA enhances energy efficiency, ideal for battery-operated devices.

Maximum Access Time: 55 ns

With a maximum access time of 55 ns, this SRAM provides fast data retrieval, suitable for high-speed applications.

Technical Specifications

SRAM M68AF031AL55N1E attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e3/e6

Length:

11.8 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP28,.53,22

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.55 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8 mm

Trade Compliance

M68AF031AL55N1E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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