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M68AF031AL55MS6

STMicroelectronics

M68AF031AL55MS6 by STMicroelectronics

M68AF031AL55MS6 from STMicroelectronics is a 32Kx8 asynchronous SRAM with a 5V supply, ideal for industrial applications. It features a max access time of 55 ns and operates in temperatures from -40 °C to 85 °C. Its compact SO package ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,621 parts In-Stock

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2,621

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Vyrian

USA . 2,615 parts In-Stock

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2,615

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Digiode

USA . 2,564 parts In-Stock

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2,564

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,582 parts In-Stock

1+ parts

$4.015

100+ parts

-

1k+ parts

$3.613

10k+ parts

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1,582

$4.015

-

$3.613

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MKK Technologies

India . 678 parts In-Stock

1+ parts

$7.550

100+ parts

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678

$7.550

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DigiPath Technology Company

USA . 678 parts In-Stock

1+ parts

$7.550

100+ parts

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678

$7.550

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Parana Technologies

USA . 2,207 parts In-Stock

1+ parts

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$4.800

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2,207

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$4.800

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Corphita

USA . 1,262 parts In-Stock

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1,262

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Overview

Unlock high-performance memory solutions with the M68AF031AL55MS6 SRAM from STMicroelectronics. Renowned for its reliability and innovative technology, STMicroelectronics ensures superior quality in every chip. Ideal for diverse applications such as industrial automation, telecommunications, and consumer electronics, this SRAM delivers fast access times and low power consumption, enhancing your systems' efficiency and longevity. Choose M68AF031AL55MS6 and elevate your designs with trusted excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and reliability, ensuring the SRAM performs well in various conditions.

Surface Mount: YES

Surface mount technology allows for compact design and efficient use of space on the PCB, making this SRAM suitable for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy placement and orientation on PCBs, improving assembly efficiency.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster response times by eliminating the need for clock synchronization.

Input/Output Type: COMMON

A common I/O type allows for easier integration into existing systems and designs, providing flexible interfacing options.

Nominal Supply Voltage / Vsup: 5V

A standard supply voltage of 5V makes this SRAM compatible with a wide range of circuits and systems.

Power Supplies (V): 5

Having a single power supply simplifies the design and reduces potential issues related to multi-voltage systems.

No. of Terminals: 28

With 28 terminals, this SRAM provides ample connection points for data and control signals, ensuring versatility in applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for more components in a smaller area, beneficial for space-constrained designs.

Maximum Operating Temperature: 85 °C

Operating up to 85 °C makes this SRAM suitable for industrial and harsh environments, ensuring longevity and reliability.

Organization: 32KX8

The 32Kx8 organization provides a balance of storage capacity and speed, ideal for a variety of applications.

Output Characteristics: 3-STATE

3-state output helps to prevent bus contention and allows for multiple devices to share the same data lines.

Minimum Standby Voltage: 2V

The ability to operate at a minimum standby voltage of 2V contributes to energy efficiency in low-power applications.

Minimum Operating Temperature: -40 °C

With a low operating temperature of -40 °C, this SRAM is capable of functioning in extreme environments, enhancing its application range.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and resistance to corrosion, ensuring reliable connections.

Terminal Position: DUAL

Having dual terminal positions facilitates easier PCB layout and routing, making it suitable for various designs.

Maximum Seated Height: 2.79 mm

A low seated height allows for compatibility with various PCB designs, ensuring a low profile in space-sensitive applications.

Width: 7.505 mm

A compact width ensures compatibility with a variety of designs, providing flexibility for integration in different systems.

Minimum Supply Voltage (Vsup): 4.5V

A minimum supply voltage of 4.5V allows for operation in low-power modes without compromising performance.

Length: 18.22 mm

The length is optimized for efficient PCB layout and allows for high-density packing in electronic designs.

Temperature Grade: INDUSTRIAL

Industrial temperature grading ensures reliable operation in a range of environmental conditions, perfect for demanding applications.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making this SRAM efficient for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel communication allows for faster data transfer rates, making this SRAM suitable for high-speed applications.

Terminal Form: GULL WING

Gull wing terminals allow for easy handling and soldering during assembly, ensuring reliable connections.

Maximum Supply Current: 50 mA

A maximum supply current of 50 mA provides a good balance between performance and power consumption.

No. of Words: 32768 words

With 32768 words of storage, this SRAM is suitable for a variety of applications requiring moderate memory capacity.

Memory Width: 8

An 8-bit memory width makes it versatile for various applications, supporting a broad range of data processing tasks.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm ensures compatibility with standard PCB layout practices, making it easier for designers.

No. of Words Code: 32K

The 32K word code signifies a practical size for most memory applications, offering enough space without being excessive.

Maximum Supply Voltage (Vsup): 5.5V

The maximum supply voltage of 5.5V provides a margin for voltage fluctuations, enhancing the reliability of the SRAM.

Memory Density: 262144 bit

A memory density of 262144 bits allows for efficient data storage, suitable for applications ranging from simple to complex.

Memory IC Type: STANDARD SRAM

Being a standard SRAM type means it is widely supported and compatible with various integration and processing architectures.

Maximum Standby Current: 0.000006 Amp

Low standby current leads to energy savings, making this SRAM an excellent choice for low-power devices.

Maximum Access Time: 55 ns

A maximum access time of 55 ns ensures fast performance, suitable for time-critical applications.

Technical Specifications

SRAM M68AF031AL55MS6 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e3

Length:

18.22 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.5

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.505 mm

Trade Compliance

M68AF031AL55MS6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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