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M68AW128ML70ZB6

STMicroelectronics

M68AW128ML70ZB6 by STMicroelectronics

M68AW128ML70ZB6 from STMicroelectronics is a 128Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,071 parts In-Stock

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Anansix

USA . 2,358 parts In-Stock

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Digiode

USA . 1,719 parts In-Stock

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IDEA Electronic Components Group

UK . 1,318 parts In-Stock

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$4.846

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$4.361

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MKK Technologies

India . 1,958 parts In-Stock

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$9.112

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DigiPath Technology Company

USA . 1,958 parts In-Stock

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$9.112

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Microchip USA

USA . 377 parts In-Stock

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$11.075

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377

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AZTECH Wire

Italy . 707 parts In-Stock

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$12.770

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$12.770

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Corphita

USA . 3,797 parts In-Stock

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Parana Technologies

USA . 1,124 parts In-Stock

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$5.794

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Overview

Unlock unparalleled performance and reliability with the M68AW128ML70ZB6 SRAM from STMicroelectronics. Renowned for high-quality manufacturing, STMicroelectronics delivers this versatile memory solution that's perfect for industrial applications, ensuring efficiency in demanding environments. Experience fast access times, low power consumption, and robust design that enhance your products' capabilities, giving you a competitive edge in today’s technology landscape.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection against environmental factors, making it suitable for industrial applications.

Surface Mount: YES

Surface mount technology allows for more compact device designs, facilitating higher density assemblies and saving space on circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape is ideal for fitting into standardized PCB layouts, promoting easier integration into existing designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances performance, as it allows for faster data access and retrieval without the need for clock synchronization.

Input/Output Type: COMMON

Common I/O type simplifies connections and integration with other components, reducing complexity in design.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V ensures wide compatibility with various microcontrollers and other digital circuitry.

Power Supplies (V): 3/3.3

Flexibility in power supply voltage options (3V/3.3V) makes this SRAM chip versatile for different applications.

No. of Terminals: 48

With 48 terminals, this SRAM can accommodate various signal connections, enhancing its functionality and connectivity.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch grid array design enable high-density interconnections, making it ideal for compact applications.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C is suitable for industrial environments, ensuring reliable performance under high heat conditions.

Organization: 128KX16

The 128Kx16 memory organization allows for efficient data storage and retrieval, optimizing memory usage for various applications.

Output Characteristics: 3-STATE

3-state output characteristics increase flexibility in bus systems, allowing multiple devices to share the same data lines.

Minimum Standby Voltage: 1.5 V

A low minimum standby voltage of 1.5V ensures reduced power consumption during standby mode, enhancing energy efficiency.

Minimum Operating Temperature: -40 °C

The -40 °C minimum operating temperature guarantees reliable function in extreme cold environments, perfect for outdoor or unconditioned spaces.

Terminal Position: BOTTOM

Bottom terminal position enhances the thermal performance and signal integrity of the device when mounted on PCBs.

Maximum Seated Height: 1.2 mm

A maximum seated height of 1.2mm allows for low-profile designs, helpful in space-constrained applications.

Width: 6 mm

A width of 6mm is suitable for compact circuit designs, allowing for easier placement in tight spaces.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage of 2.7V ensures compatibility with a wider range of devices, enhancing its usability across different platforms.

Length: 8 mm

The compact length of 8mm contributes to the overall space-saving benefits, making it ideal for portable electronics.

Temperature Grade: INDUSTRIAL

Industrial temperature grades ensure the device is built for high reliability and performance in demanding environments.

Technology: CMOS

CMOS technology allows for lower power consumption and higher integration levels, making the device efficient and effective.

Parallel or Serial: PARALLEL

Parallel data access supports high-speed operations, enabling faster data throughput for performance-critical applications.

Terminal Form: BALL

Ball terminal form provides better thermal and structural stability, which is crucial for reliable performance.

Maximum Supply Current: 20 mA

A maximum supply current of 20mA is efficient for most applications, ensuring lower energy consumption.

No. of Words: 131072 words

With 131072 words of memory, this SRAM chip provides significant storage capacity for a variety of tasks.

Memory Width: 16

A memory width of 16 bits is effective for processing larger data types, enhancing data throughput and efficiency.

Terminal Pitch: 0.75 mm

A terminal pitch of 0.75 mm allows for fine interconnections, suitable for high-density designs.

No. of Words Code: 128K

The 128K word count represents substantial data capacity, enabling efficient operation in applications requiring significant storage.

Maximum Supply Voltage (Vsup): 3.6 V

Having a maximum supply voltage of 3.6V ensures flexibility in various designs while maintaining stable performance.

Memory Density: 2097152 bit

A memory density of 2,097,152 bits provides substantial space for data storage, making it suitable for a wide range of applications.

Memory IC Type: STANDARD SRAM

As a standard SRAM, it offers a familiar architecture for designers, ensuring ease of integration into existing systems.

Maximum Standby Current: 0.000009 Amp

Low maximum standby current minimizes overall energy consumption when the device is idle, supporting energy-efficient designs.

Maximum Access Time: 70 ns

An access time of 70 ns allows for relatively fast data retrieval, benefiting applications that require quick access to information.

Technical Specifications

SRAM M68AW128ML70ZB6 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

Length:

8 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000009 Amp

Minimum Standby Voltage:

1.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

M68AW128ML70ZB6 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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