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CY62167G30-45BVXIT

Infineon Technologies

CY62167G30-45BVXIT by Infineon Technologies

Infineon's CY62167G30-45BVXIT is a 1MX16 SRAM with 45ns access time, operating at 3.6V. It features a very thin profile, fine pitch grid array package and is AEC-Q100 qualified for industrial applications. The memory has common I/O type, 3-state output characteristics, and supports parallel operation.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 35,317 parts In-Stock

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Vyrian

USA . 35,245 parts In-Stock

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Flip Electronics

USA . 19,138 parts In-Stock

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Digiode

USA . 247 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Ampacity Inc.

Singapore . 35,018 parts In-Stock

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$3.000

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$3.000

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Modulus Dynamics

Lithuania . 3,906 parts In-Stock

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$4.053

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$3.891

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$3.729

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3,906

$4.053

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$3.729

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Component Stockers USA

USA . 353 parts In-Stock

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$254.990

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353

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Continental Prestige Electronics

USA . 6,691 parts In-Stock

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Corphita

USA . 743 parts In-Stock

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Argo Parts USA

USA . 697 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Elevate your electronic devices to new heights with the CY62167G30-45BVXIT by Infineon Technologies. As a leading manufacturer in the industry, Infineon ensures top-notch quality and reliability in every product they create. This Standard SRAM offers a wide range of applications, from automotive to industrial, providing customers with versatile solutions for their specific needs. With a fast maximum access time of 45ns and low standby current, this memory IC delivers exceptional performance while conserving energy. Upgrade your systems today with the CY62167G30-45BVXIT and experience the superior value it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the SRAM, ensuring long-term reliability.

Surface Mount: YES

Enables easy and efficient integration of the SRAM into electronic circuits, saving space and simplifying assembly.

Operating Mode: ASYNCHRONOUS

Allows for independent and asynchronous operation, making the SRAM suitable for various applications and scenarios.

Nominal Supply Voltage / Vsup (V): 3

Provides a stable power supply for the SRAM, ensuring consistent performance and reliability.

Maximum Operating Temperature: 85 °C

Ensures the SRAM can operate in a wide range of temperature conditions, making it suitable for industrial applications.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making the SRAM energy-efficient and reliable.

Maximum Access Time: 45 ns

The fast access time of the SRAM allows for quick read and write operations, improving overall system performance.

Technical Specifications

SRAM CY62167G30-45BVXIT attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

45 ns

Alternate Memory Width:

8

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Standby Current:

.000016 Amp

Minimum Standby Voltage:

1 V

Maximum Supply Current:

36 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

CY62167G30-45BVXIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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