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M48Z2M1Y-70PL1

STMicroelectronics

M48Z2M1Y-70PL1 by STMicroelectronics

M48Z2M1Y-70PL1 by STMicroelectronics is a 2MX8 SRAM with 16777216 bit memory density, operating at 5V. It features an access time of 70ns, output enable function, and operates in parallel mode. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,958 parts In-Stock

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Anansix

USA . 2,177 parts In-Stock

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2,177

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Digiode

USA . 2,157 parts In-Stock

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2,157

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,682 parts In-Stock

1+ parts

$3.076

100+ parts

-

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$2.769

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1,682

$3.076

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$2.769

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MKK Technologies

India . 2,276 parts In-Stock

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$5.785

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2,276

$5.785

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DigiPath Technology Company

USA . 2,276 parts In-Stock

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$5.785

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2,276

$5.785

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AZTECH Wire

Italy . 904 parts In-Stock

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$19.110

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904

$19.110

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Microchip USA

USA . 410 parts In-Stock

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$42.585

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410

$42.585

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Component Stockers USA

USA . 313 parts In-Stock

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$99.990

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Corphita

USA . 2,454 parts In-Stock

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Parana Technologies

USA . 2,195 parts In-Stock

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$3.678

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$3.678

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Kepictronics

USA . 2,000 parts In-Stock

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Overview

Experience unparalleled reliability and performance with the M48Z2M1Y-70PL1 by STMicroelectronics. As a leader in the industry, STMicroelectronics brings you a high-quality SRAM that offers seamless operation and exceptional durability. Ideal for a wide range of applications, this product provides customers with unmatched value and benefits. Trust STMicroelectronics to deliver advanced technology that meets your specific needs and elevates your projects to new heights. Choose the M48Z2M1Y-70PL1 for superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-lasting performance.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of memory cells, resulting in efficient data retrieval.

Nominal Supply Voltage / Vsup (V): 5

Stable voltage supply ensures consistent and reliable performance.

Organization: 2MX8

Organized into 2 million words of 8 bits each, offering a high memory capacity.

Technology: CMOS

CMOS technology provides low power consumption and high speed operation.

Memory IC Type: NON-VOLATILE SRAM

Non-volatile memory retains data even when power is turned off, ensuring data persistence.

Maximum Access Time: 70 ns

Quick access time allows for fast data retrieval, enhancing overall system performance.

Technical Specifications

SRAM M48Z2M1Y-70PL1 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDIP-T36

JESD-609 Code:

e0

Length:

52.96 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

36

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX8

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP36,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

9.52 mm

Maximum Standby Current:

.008 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

140 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

M48Z2M1Y-70PL1 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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