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IDT71V124SA10PHGI8

Renesas Electronics

IDT71V124SA10PHGI8 by Renesas Electronics

The Renesas Electronics IDT71V124SA10PHGI8 is a 128Kx8 SRAM with 3.3V supply voltage, operating in asynchronous mode. It features a max access time of 10ns and offers 131072 words of memory width. Ideal for industrial applications requiring fast and reliable data storage with a compact small outline thin profile package style.

Median Price

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2

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< 1k

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Vyrian

USA . 738 parts In-Stock

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738

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Nova Conductors

Japan . 81 parts In-Stock

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AZTECH Wire

Italy . 616 parts In-Stock

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$7.941

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616

$7.941

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Semicontronic

India . 907 parts In-Stock

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$11.000

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$10.725

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$10.670

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907

$11.000

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$10.670

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Ampacity Inc.

Singapore . 1,427 parts In-Stock

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$15.000

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Continental Prestige Electronics

USA . 3,785 parts In-Stock

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Argo Parts USA

USA . 1,165 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the IDT71V124SA10PHGI8 by Renesas Electronics. As a leading manufacturer in the industry, Renesas Electronics delivers top-notch quality SRAM products that excel in a wide range of applications. Whether you are in need of high-speed memory solutions for industrial automation, telecommunications, or automotive systems, this product offers unmatched value with its efficient operation and robust design. Trust Renesas Electronics to provide you with cutting-edge technology that meets your requirements and exceeds your expectations. Choose the IDT71V124SA10PHGI8 for superior performance and seamless integration in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components.

Surface Mount: YES

Allows for easy integration onto PCBs for compact and efficient designs.

Operating Mode: ASYNCHRONOUS

Enables independent and simultaneous read and write operations for efficient data processing.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a common voltage level, making it compatible with various systems and applications.

Memory Width: 8

Provides a high data bandwidth for fast access and retrieval of information.

Maximum Access Time: 10 ns

Ensures quick access to data for smooth performance in time-sensitive applications.

Technical Specifications

SRAM IDT71V124SA10PHGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3

Length:

20.95 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP32,.46

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.01 Amp

Minimum Standby Voltage:

3.15 V

Sub-Category:

SRAMs

Maximum Supply Current:

150 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

10.16 mm

Trade Compliance

IDT71V124SA10PHGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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