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M68AW256ML70ND6T

STMicroelectronics

M68AW256ML70ND6T by STMicroelectronics

M68AW256ML70ND6T from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,941 parts In-Stock

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Digiode

USA . 3,054 parts In-Stock

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3,054

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Anansix

USA . 1,347 parts In-Stock

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North Shore Components

USA . 10 parts In-Stock

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IDEA Electronic Components Group

UK . 1,557 parts In-Stock

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$3.084

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-

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$2.775

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$3.084

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$2.775

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Microchip USA

USA . 388 parts In-Stock

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$3.405

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388

$3.405

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MKK Technologies

India . 217 parts In-Stock

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$5.799

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217

$5.799

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DigiPath Technology Company

USA . 217 parts In-Stock

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$5.799

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217

$5.799

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AZTECH Wire

Italy . 112 parts In-Stock

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$12.770

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$12.770

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Component Stockers USA

USA . 295 parts In-Stock

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$99.990

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$99.990

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Corphita

USA . 2,913 parts In-Stock

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Parana Technologies

USA . 746 parts In-Stock

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$3.687

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Kepictronics

USA . 62 parts In-Stock

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Overview

Elevate your design with the M68AW256ML70ND6T SRAM from STMicroelectronics, where reliability meets innovation. Designed for superior performance in industrial applications, this high-quality memory solution ensures seamless data processing with low power consumption. Benefit from its compact, space-saving package and robust temperature range, making it ideal for demanding environments. Trust STMicroelectronics to deliver unmatched quality and enhance your projects with advanced technology that stands the test of time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material offers good mechanical stability and protection, making the product durable and reliable.

Surface Mount: YES

Surface mount technology facilitates easier assembly on PCBs, enabling more compact designs and better performance.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on the circuit board, allowing for efficient layout and improved thermal management.

Operating Mode: ASYNCHRONOUS

An asynchronous operating mode allows for simpler timing control, making it easier to integrate into various systems.

Input/Output Type: COMMON

Common I/O type enhances compatibility with a broad range of microcontrollers and processors.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V makes it energy-efficient and suitable for battery-operated devices.

Power Supplies (V): 3/3.3

Supports both 3V and 3.3V power supplies, providing flexibility for various applications.

No. of Terminals: 44

44 terminals offer ample connectivity options for integration into complex systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile allow for efficient use of board space, making it ideal for compact designs.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this SRAM can function reliably in various ambient conditions, suitable for industrial applications.

Organization: 256KX16

The 256K x 16 organization provides a good balance between capacity and data width, enabling efficient data storage and retrieval.

Output Characteristics: 3-STATE

3-state output characteristics allow for multiple devices to be connected on the same bus, improving design flexibility.

Minimum Standby Voltage: 1.5 V

A low minimum standby voltage enables the chip to remain operational under varying supply conditions, enhancing reliability.

Minimum Operating Temperature: -40 °C

Operating at temperatures as low as -40 °C makes this SRAM suitable for extreme environmental conditions, ideal for industrial and automotive applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and longevity in connections, providing reliable performance.

Terminal Position: DUAL

Dual terminal position enhances board design flexibility, allowing for easier placement in different layouts.

Maximum Seated Height: 1.2 mm

A low seated height contributes to a compact footprint, ideal for modern, space-constrained applications.

Width: 10.16 mm

Compact width ensures efficient use of PCB space, making it suitable for various form factors.

Minimum Supply Voltage (Vsup): 2.7 V

Minimum supply voltage of 2.7V allows it to operate in a broader range of applications, including low-power devices.

Length: 18.41 mm

The length of 18.41 mm helps maintain a compact design, fitting well within modern electronic devices.

Temperature Grade: INDUSTRIAL

Rated for industrial temperature grades, ensuring reliable performance in harsh environments.

Technology: CMOS

Using CMOS technology offers low power consumption, making it ideal for battery-powered and energy-efficient applications.

Parallel or Serial: PARALLEL

Parallel interfaces allow for faster data transfer rates, making this SRAM suitable for high-performance applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easier placement and soldering on PCBs, enhancing production efficiency.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA ensures efficient power usage, crucial for battery-operated devices.

No. of Words: 262144 words

With 262144 words available, this SRAM provides significant memory capacity for a wide range of applications.

Memory Width: 16

A memory width of 16 bits allows efficient data processing and storage, enhancing performance.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch ensures compatibility with a variety of PCB layouts and increases mounting stability.

No. of Words Code: 256K

A 256K word capacity meets the needs of many applications, providing adequate memory for storage and data processing.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V allows for flexibility in power supply options, making it adaptable to many designs.

Memory Density: 4194304 bit

With a density of 4194304 bits, this SRAM offers a high storage capacity, suitable for demanding applications.

Memory IC Type: STANDARD SRAM

As a standard SRAM IC, it ensures widespread compatibility and ease of integration into diverse systems.

Maximum Standby Current: 0.000009 Amp

A very low maximum standby current of 9 µA significantly reduces power consumption when idle, enhancing energy efficiency.

Maximum Access Time: 70 ns

A maximum access time of 70 ns allows for quick data retrieval, making it suitable for high-speed applications.

Technical Specifications

SRAM M68AW256ML70ND6T attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e0

Length:

18.41 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000009 Amp

Minimum Standby Voltage:

1.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

M68AW256ML70ND6T Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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