Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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M48Z2M1Y-70PL1
STMicroelectronics
M48Z2M1Y-70PL1 by STMicroelectronics is a 2MX8 SRAM with 16777216 bit memory density, operating at 5V. It features an access time of 70ns, output enable function, and operates in parallel mode. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.
70 ns
R-PDIP-T36
e0
52.96 mm
16777216 bit
NON-VOLATILE SRAM
8
1
36
2097152 words
2M
ASYNCHRONOUS
70 Cel
0 Cel
2MX8
3-STATE
YES
PLASTIC/EPOXY
DIP
DIP36,.6
RECTANGULAR
IN-LINE
PARALLEL
NOT SPECIFIED
5
Not Qualified
9.52 mm
.008 Amp
SRAMs
140 mA
5.5 V
4.5 V
NO
CMOS
COMMERCIAL
THROUGH-HOLE
2.54 mm
DUAL
15.24 mm
HT6256DC
Honeywell
Honeywell's HT6256DC is a 32Kx8 SRAM with 3-STATE output, operating at -55 to 225°C. It features a parallel interface, 50ns access time, and MILITARY temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.
50 ns
COMMON
R-CDIP-T28
35.56 mm
262144 bit
STANDARD SRAM
28
32768 words
32K
225 Cel
-55 Cel
32KX8
CERAMIC, METAL-SEALED COFIRED
DIP28,.6
4.445 mm
.00033 Amp
2.5 V
4 mA
MOS
MILITARY
TIN LEAD
DS1225Y-150-IND
Dallas Semiconductor
DS1225Y-150-IND by Dallas Semiconductor is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at 5V, has a max access time of 150ns, and is designed for industrial temperature grades. This rectangular package with 28 terminals in-line is ideal for applications requiring reliable data storage in harsh environments.
150 ns
R-PDIP-T28
65536 bit
NON-VOLATILE SRAM MODULE
8192 words
8K
85 Cel
-40 Cel
8KX8
.005 Amp
85 mA
INDUSTRIAL
Tin/Lead (Sn/Pb)
DS1225AD-200-IND
DS1225AD-200-IND by Dallas Semiconductor is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and is designed for industrial applications. The package style is in-line with through-hole terminals and a temperature range of -40 to 85°C.
200 ns
DS1225AD-70-IND
DS1225AD-70-IND by Dallas Semiconductor is an 8Kx8 SRAM with 65536 bit memory density. It operates at 5V, has a max access time of 70ns, and is designed for industrial applications requiring non-volatile memory storage.
DS1230Y-70-IND
DS1230Y-70-IND by Dallas Semiconductor is a 32Kx8 non-volatile SRAM module with 70ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable data storage in harsh environments.
10 YEARS DATA RETENTION PERIOD
DS1230Y-200-IND
DS1230Y-200-IND by Dallas Semiconductor is a 32Kx8 non-volatile SRAM module with 262144-bit memory density. Operating at 5V, it has a max access time of 200ns and can withstand industrial temperatures up to 85°C. Ideal for applications requiring reliable data storage in harsh environments.
DS1245AB-120-IND
DS1245AB-120-IND by Dallas Semiconductor is a 128Kx8 Non-Volatile SRAM Module with 120ns access time. Operating at 5V, it has a memory density of 1048576 bits and industrial temperature grade. Suitable for applications requiring reliable data storage in harsh environments.
120 ns
R-PDIP-T32
1048576 bit
32
131072 words
128K
128KX8
DIP32,.6
5.25 V
4.75 V
DS1245Y-70-IND
DS1245Y-70-IND by Dallas Semiconductor is a 128Kx8 non-volatile SRAM module with 70ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable data storage in harsh environments.
SN74AS870DWR
Texas Instruments
SN74AS870DWR by Texas Instruments is a 16x4 MULTI-PORT SRAM with 64-bit memory density. It operates at 5V, has a max access time of 15ns, and features 3-STATE output characteristics. This TTL technology chip is ideal for applications requiring fast and efficient parallel memory storage.
15 ns
DUAL MEMORY FOR MULTIBUS ARCHITECTURE
R-PDSO-G24
15.4 mm
64 bit
MULTI-PORT SRAM
4
2
24
16 words
16
16X4
SOP
SMALL OUTLINE
2.65 mm
TTL
GULL WING
1.27 mm
7.5 mm
M48Z128-70PM1
M48Z128-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 70ns access time, operating at 5V. It features asynchronous mode, 3-state output characteristics, and a rectangular package shape. Ideal for applications requiring reliable memory storage in commercial temperature environments.
10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP
R-PDMA-P32
e3
42.8 mm
MICROELECTRONIC ASSEMBLY
.004 Amp
105 mA
MATTE TIN
PIN/PEG
M48Z128Y-70PM1
M48Z128Y-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 3-STATE output characteristics. Operating at 5V, it has an access time of 70ns and standby current of 0.004A. Ideal for commercial applications requiring reliable memory storage in a compact MICROELECTRONIC ASSEMBLY package.
225
M48Z128Y-85PM1
STMicroelectronics' M48Z128Y-85PM1 is a 128Kx8 non-volatile SRAM module with 3-STATE output, operating at 5V. With an access time of 85ns, it's ideal for applications requiring fast and reliable data storage in commercial-grade environments. The rectangular package style and asynchronous operation make it suitable for various microelectronic assemblies.
85 ns
M48Z512AY-70PM1
M48Z512AY-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with asynchronous operation and 3-STATE output. It operates at 5V, has a max access time of 70ns, and features non-volatile memory technology. This rectangular package with 32 terminals is ideal for commercial applications requiring reliable memory storage.
4194304 bit
524288 words
512K
512KX8
115 mA
M48Z512A-70PM1
M48Z512A-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with 70ns access time and operates at 5V. It features a rectangular package shape, asynchronous mode, and 3-state output characteristics. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.
M48Z02-150PC1
M48Z02-150PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features asynchronous mode and common I/O type, suitable for commercial applications. With a memory density of 16384 bit, this CMOS technology-based IC offers parallel operation in a rectangular package style.
R-PDIP-T24
34.545 mm
16384 bit
2048 words
2K
2KX8
DIP24,.6
9.65 mm
.003 Amp
80 mA
M48Z02-200PC1
M48Z02-200PC1 by STMicroelectronics is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It features an asynchronous mode, parallel interface, and max access time of 200ns. Ideal for applications requiring reliable data storage in commercial temperature environments.
BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION
M48Z02-70PC1
M48Z02-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 5V supply voltage, operating in asynchronous mode. It features 3-STATE output characteristics and offers 16384 bits memory density. Ideal for applications requiring common I/O type and parallel operation at temperatures up to 70°C.
M48Z12-200PC1
STMicroelectronics M48Z12-200PC1 is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It has a max access time of 200ns and standby current of 0.003Amp. Ideal for applications requiring reliable memory storage in commercial temperature environments.
M48Z12-70PC1
M48Z12-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features a rectangular package style, asynchronous mode, and common I/O type. Ideal for applications requiring standard SRAM memory technology in commercial temperature grades.
IDT71024S15TYI
Integrated Device Technology
IDT71024S15TYI is a 128Kx8 SRAM with 15ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for industrial applications requiring fast and reliable memory storage. This small outline package offers parallel interface with 32 terminals in a rectangular shape.
R-PDSO-J32
20.96 mm
3
SOJ
SOJ32,.34
3.759 mm
.01 Amp
155 mA
J BEND
30
7.62 mm
LH5164A-10L
Sharp Corporation
LH5164A-10L by Sharp Corp is an 8Kx8 SRAM with 100ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Ideal for commercial applications requiring fast memory access in a compact IN-LINE package.
100 ns
36 mm
-10 Cel
5.2 mm
2 V
71V35761S183BGGI8
71V35761S183BGGI8 by Integrated Device Technology is a 128Kx36 CACHE SRAM with synchronous operation, 183 MHz clock frequency, and 3.3 ns access time. Ideal for industrial applications requiring high-speed data processing in compact systems.
3.3 ns
PIPELINED ARCHITECTURE
183 MHz
R-PBGA-B119
e1
22 mm
4718592 bit
CACHE SRAM
119
SYNCHRONOUS
128KX36
BGA
BGA119,7X17,50
GRID ARRAY
260
3.3
2.36 mm
.035 Amp
3.14 V
350 mA
3.465 V
3.135 V
TIN SILVER COPPER
BALL
BOTTOM
14 mm
71V35761S183BGGI
Integrated Device Technology's 71V35761S183BGGI is a 128KX36 CACHE SRAM with synchronous operation at 183 MHz. It features a 3-STATE output and operates at an industrial temperature range of -40 to 85 °C. Suitable for applications requiring fast access times and high memory density.
CY14MB256J2-SXI
Cypress Semiconductor
CY14MB256J2-SXI by Cypress Semiconductor is a 32Kx8 NON-VOLATILE SRAM with 262144-bit memory density. Operating at 3V, it features SYNCHRONOUS mode and SERIAL interface. Ideal for industrial applications, this SRAM has a small outline package and operates b/w -40 to 85°C.
R-PDSO-G8
e4
4.889 mm
SOP8,.25
SERIAL
1.727 mm
.00015 Amp
3 mA
3.6 V
2.7 V
NICKEL PALLADIUM GOLD
3.8985 mm
CY62147EV30LL-45B2XA
CY62147EV30LL-45B2XA by Cypress Semiconductor is a 256Kx16 SRAM with 3.6V max supply voltage, 45ns access time, and industrial temperature grade. It features a very thin profile grid array package for common asynchronous applications in parallel memory systems.
45 ns
R-PBGA-B48
8 mm
48
262144 words
256K
256KX16
VFBGA
BGA48,6X8,30
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
2.5/3.3
1 mm
.000007 Amp
1.5 V
20 mA
2.2 V
.75 mm
6 mm
M48Z18-100PC1
M48Z18-100PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 100ns. This rectangular package SRAM is commonly used in commercial applications requiring reliable, low-power memory solutions.
39.625 mm
M48Z35-70PC1
M48Z35-70PC1 by STMicroelectronics is a 32Kx8 SRAM with 70ns access time and operates at 5V. It features a rectangular package style, asynchronous mode, and 3-STATE output characteristics. Ideal for commercial applications requiring reliable memory storage in devices with parallel data processing needs.
SRAM STD
50 mA
M48Z58-70PC1
M48Z58-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. Operating at 5V, it features a max access time of 70ns and output enable function. This CMOS technology-based IC is ideal for applications requiring reliable data storage in commercial temperature environments.
Matte Tin (Sn)
M48Z58Y-70PC1
M48Z58Y-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 70ns. This rectangular package SRAM is commonly used in applications requiring reliable data storage and retrieval in commercial temperature environments.
IDT71256SA20Y
IDT71256SA20Y by Integrated Device Technology is a 32Kx8 SRAM with 20ns access time, operating at 5V. It features a small outline package and offers common I/O type with 3-STATE output characteristics. Ideal for applications requiring fast and reliable memory storage in commercial temperature environments.
20 ns
R-PDSO-J28
17.9324 mm
SOJ28,.34
3.556 mm
.015 Amp
145 mA
7.5184 mm
DS1220Y-100-IND
DS1220Y-100-IND by Dallas Semiconductor is a 2Kx8 Non-Volatile SRAM module with 100ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable memory storage in harsh environments.
DS1250Y-70-IND
DS1250Y-70-IND by Dallas Semiconductor is a 512Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and industrial temperature grade. Ideal for applications requiring non-volatile memory storage in industrial environments.
10 YEAR DATA RETENTION PERIOD
R-XDIP-T32
UNSPECIFIED
IDT71256SA25YI
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: SOJ; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 5;
25 ns
Tin/Lead (Sn85Pb15)
M48Z129V-85PM1
M48Z129V-85PM1 by STMicroelectronics is a 128Kx8 SRAM module with asynchronous operation, 3.3V supply, and 85ns access time. It is ideal for applications requiring non-volatile memory storage in commercial temperature environments.
3 V
M48Z512AV-85PM1
STMicroelectronics M48Z512AV-85PM1 is a 512Kx8 non-volatile SRAM module with 85ns access time, operating at 3.3V. It has a rectangular package shape, through-hole terminal form, and is suitable for commercial temperature grade applications.
IS66WVE4M16EALL-70BLI
Integrated Silicon Solution
IS66WVE4M16EALL-70BLI by Integrated Silicon Solution is a 4MX16 Pseudo Static RAM with a memory density of 67108864 bit. It operates in asynchronous mode with a max access time of 70 ns and has a min standby voltage of 1.7 V. This SRAM is commonly used in industrial applications that require high-speed data storage and retrieval.
67108864 bit
PSEUDO STATIC RAM
4194304 words
4M
4MX16
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
1.2 mm
1.7 V
25 mA
1.95 V
23A256-I/SN
Microchip Technology
23A256-I/SN by Microchip Technology is a 32Kx8 SRAM with 16 MHz clock frequency, operating at 1.8V. It features separate I/O, synchronous operation, and 3-STATE output. Ideal for industrial applications requiring high-speed memory access in a small outline package.
16 MHz
SEPARATE
4.9 mm
SOP8,.23
1.8
1.75 mm
.000001 Amp
10 mA
40
3.9 mm
23A640-I/P
23A640-I/P by Microchip Technology is an 8Kx8 SRAM with 16 MHz clock frequency, operating at -40 to 85 °C. It features a CMOS technology, serial interface, and 65536 bit memory density. Ideal for industrial applications requiring reliable synchronous memory solutions.
R-PDIP-T8
9.271 mm
DIP8,.3
TS 16949
5.334 mm
23A640-I/SN
Microchip Technology's 23A640-I/SN is an 8Kx8 SRAM with a memory density of 65536 bit. Operating at 1.8V, it offers a max clock frequency of 16MHz and features synchronous operation. Ideal for industrial applications requiring high-speed data storage in compact spaces.
23A640-I/ST
Microchip Technology's 23A640-I/ST is an 8Kx8 SRAM with a max clock frequency of 16MHz. Operating at 1.8V, it features separate I/O and offers a memory density of 65536 bits. Ideal for industrial applications requiring high-speed synchronous memory in a small outline package.
4.4 mm
TSSOP
TSSOP8,.25
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
.65 mm
3 mm
23K256-I/P
23K256-I/P by Microchip Technology is a 32KX8 SRAM with a max clock frequency of 20 MHz. It operates at a nominal voltage of 3V and has a memory density of 262144 bit. This memory IC type is commonly used in industrial applications requiring high-speed data storage.
20 MHz
3/3.3
.000004 Amp
CY7C1041CV33-12ZSXE
CY7C1041CV33-12ZSXE by Cypress Semiconductor is a 256KX16 SRAM with 3.3V supply, operating at -40 to 125 °C. It features 12 ns access time, 44 terminals in small outline package for automotive applications. With common I/O type and parallel technology, it offers 4194304 bit memory density.
12 ns
R-PDSO-G44
18.415 mm
44
125 Cel
TSOP2
TSOP44,.46,32
SMALL OUTLINE, THIN PROFILE
AEC-Q100
1.194 mm
120 mA
AUTOMOTIVE
Nickel/Palladium/Gold (Ni/Pd/Au)
.8 mm
20
10.16 mm
MT45W4MW16PCGA-70IT
Micron Technology
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;
1.8,1.8/3
.00014 Amp
Other Memory ICs
Tin/Silver/Copper (Sn/Ag/Cu)
MT45W4MW16PCGA-70LWT
PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 25 mA;
-30 Cel
.00012 Amp
OTHER
IS61C25616AL-10KLI
IS61C25616AL-10KLI by Integrated Silicon Solution is a 256KX16 SRAM with 10ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.
10 ns
R-PDSO-J44
28.575 mm
3.75 mm
10
CY7C1020CV33-15ZSXET
CY7C1020CV33-15ZSXET by Cypress Semiconductor is a 32KX16 SRAM with 3.3V supply, 15ns access time, and 44 terminals. Ideal for automotive applications due to AEC-Q100 screening level and small outline package. Operating in asynchronous mode, it offers common I/O type and 3-STATE output characteristics.
524288 bit
32KX16
3.63 V
2.97 V
CY7C1021BN-15ZXIT
CY7C1021BN-15ZXIT by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.
65536 words
64K
64KX16
130 mA
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