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71V35761S183BGGI8

Integrated Device Technology

71V35761S183BGGI8 by Integrated Device Technology

71V35761S183BGGI8 by Integrated Device Technology is a 128Kx36 CACHE SRAM with synchronous operation, 183 MHz clock frequency, and 3.3 ns access time. Ideal for industrial applications requiring high-speed data processing in compact systems.

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1k+

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Vyrian

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Semicontronic

India . 870 parts In-Stock

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$8.775

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$8.730

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AZTECH Wire

Italy . 718 parts In-Stock

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Ampacity Inc.

Singapore . 1,381 parts In-Stock

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Argo Parts USA

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Overview

Experience the superior quality and reliability of the 71V35761S183BGGI8 by Integrated Device Technology, a leading manufacturer in the industry. This CACHE SRAM offers unmatched performance and efficiency for a wide range of applications. With a maximum clock frequency of 183 MHz and a memory density of 4718592 bits, this industrial-grade SRAM is ideal for high-speed data processing tasks. Trust in the value and benefits that this product provides to enhance your projects and streamline your operations. Elevate your performance with Integrated Device Technology.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides a durable and cost-effective solution for housing the SRAM.

Surface Mount

YES - Allows for easy installation and integration into circuit boards.

Package Shape

RECTANGULAR - Offers a standard shape for compatibility with various systems.

Operating Mode

SYNCHRONOUS - Ensures efficient data transfer and synchronicity within the system.

Input/Output Type

COMMON - Simplifies connectivity and communication between components.

Nominal Supply Voltage / Vsup (V)

3.3 - Optimal voltage for reliable performance and power efficiency.

Power Supplies (V)

3.3 - Consistent power source for stable operation.

No. of Terminals

119 - Sufficient terminals for connectivity and signal transmission.

Package Style (Meter)

GRID ARRAY - Provides a compact and organized layout for the SRAM.

Maximum Operating Temperature

85 °C - Allows for reliable performance in a wide range of environments.

Organization

128KX36 - Provides ample memory capacity and data organization capabilities.

Output Characteristics

3-STATE - Enables multiple outputs and flexible data sharing.

Minimum Standby Voltage

3.14 V - Ensures minimal power consumption in standby mode.

Minimum Operating Temperature

40 °C - Suitable for use in extreme cold conditions.

Terminal Finish

TIN SILVER COPPER - Offers corrosion resistance and excellent electrical conductivity.

Terminal Position

BOTTOM - Facilitates easy connection and board layout.

Maximum Seated Height

2.36 mm - Compact size for space-saving installations.

Maximum Clock Frequency (fCLK)

183 MHz - Supports high-speed data processing and operations.

Width

14 mm - Compact design for versatile installation options.

Minimum Supply Voltage (Vsup)

3.135 V - Reliable performance even at low supply voltages.

Maximum Time At Peak Reflow Temperature (s)

30 - Ensures proper reflow soldering during assembly.

Peak Reflow Temperature °C

260 - Withstands high temperatures during manufacturing processes.

Length

22 mm - Ideal size for accommodating the necessary components.

Temperature Grade

INDUSTRIAL - Suitable for industrial applications with varying temperature ranges.

Technology

CMOS - Efficient and low-power technology for reliable performance.

Parallel or Serial

PARALLEL - Allows for simultaneous data transfer for faster processing.

Terminal Form

BALL - Offers a secure and reliable connection for signal transmission.

Maximum Supply Current

350 mA - Can handle high current loads for robust operation.

No. of Words

131072 words - Provides ample memory storage for data processing.

Memory Width

36 - Wide memory capacity for storing and retrieving data efficiently.

Terminal Pitch

1.27 mm - Ideal spacing for connecting terminals on circuit boards.

No. of Words Code

128K - Standard coding for easy identification and compatibility.

Moisture Sensitivity Level (MSL)

3 - Resistant to moisture and environmental conditions.

Maximum Supply Voltage (Vsup)

3.465 V - Handles high supply voltages for reliable performance.

Memory Density

4718592 bit - Offers high-density memory storage for extensive data handling.

Memory IC Type

CACHE SRAM - Specifically designed for caching data for quick access and retrieval.

Maximum Standby Current

0.035 Amp - Low standby current for energy efficiency.

Maximum Access Time

3.3 ns - Provides fast access to stored data for seamless operation.

Technical Specifications

SRAM 71V35761S183BGGI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

3.3 ns

Additional Features:

PIPELINED ARCHITECTURE

Maximum Clock Frequency (fCLK):

183 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B119

JESD-609 Code:

e1

Length:

22 mm

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

119

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA119,7X17,50

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

2.36 mm

Maximum Standby Current:

.035 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

350 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1.27 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

71V35761S183BGGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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