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71V3556SA133BQGI8

Renesas Electronics

71V3556SA133BQGI8 by Renesas Electronics

Renesas Electronics 71V3556SA133BQGI8 is a 128Kx36 ZBT SRAM with 4.2ns access time, operating at 3.3V. It features synchronous operation, industrial temperature grade, and parallel interface. Ideal for high-speed memory applications in industrial settings due to its thin profile grid array package and low power consumption of 320mA.

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1k+

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VNN

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AZTECH Wire

Italy . 553 parts In-Stock

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Ampacity Inc.

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Semicontronic

India . 469 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Overview

Experience unparalleled performance and reliability with the 71V3556SA133BQGI8 by Renesas Electronics. As a leading manufacturer in the industry, Renesas Electronics delivers top-quality SRAM products that meet the highest standards of excellence. This ZBT SRAM memory device offers lightning-fast access times, making it ideal for industrial applications where speed is crucial. With a wide operating temperature range and low power consumption, this memory IC provides exceptional value and efficiency for your projects. Trust Renesas Electronics to provide you with cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness, making the product reliable and affordable.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a common voltage level, ensuring compatibility with a wide range of systems and applications.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial environments where heat may be a factor.

Technology: CMOS

Uses CMOS technology, known for its low power consumption and high performance, making the product efficient and reliable.

Memory IC Type: ZBT SRAM

Utilizes Zero Bus Turnaround (ZBT) technology, reducing access times and improving overall performance of the product.

Technical Specifications

SRAM 71V3556SA133BQGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

4.2 ns

JESD-30 Code:

R-PBGA-B165

JESD-609 Code:

e1

Length:

15 mm

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

165

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX36

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Supply Current:

320 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

13 mm

Trade Compliance

71V3556SA133BQGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Renesas Electronics

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