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71V3556SA166BQGI8

Renesas Electronics

71V3556SA166BQGI8 by Renesas Electronics

Renesas Electronics 71V3556SA166BQGI8 is a 128Kx36 ZBT SRAM with synchronous operation at 3.3V. It features a fast access time of 3.5ns, industrial temperature grade, and parallel interface. Ideal for high-speed applications requiring reliable memory solutions in compact form factors.

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1k+

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VNN

France . 34,641 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 475 parts In-Stock

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Semicontronic

India . 326 parts In-Stock

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Ampacity Inc.

Singapore . 1,396 parts In-Stock

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Microchip USA

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Experience top-notch performance and reliability with the 71V3556SA166BQGI8 by Renesas Electronics. As a leading manufacturer in the industry, Renesas Electronics delivers exceptional quality and cutting-edge technology in every product. This ZBT SRAM memory module is perfect for industrial applications, offering fast access time, high memory density, and efficient operation at extreme temperatures. Upgrade your systems with this advanced solution and enjoy seamless performance and superior functionality. Trust Renesas Electronics for innovative solutions that drive success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the SRAM, ensuring long-term reliability.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage level, making it compatible with a wide range of systems and applications.

Maximum Operating Temperature: 85 °C

Can withstand high temperature environments, making it suitable for industrial use.

Memory IC Type: ZBT SRAM

ZBT (Zero Bus Turnaround) technology allows for zero latency in read and write operations, enhancing overall performance.

Maximum Access Time: 3.5 ns

Provides fast access times, which is critical for applications that require quick data retrieval.

Technical Specifications

SRAM 71V3556SA166BQGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

3.5 ns

JESD-30 Code:

R-PBGA-B165

JESD-609 Code:

e1

Length:

15 mm

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

165

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX36

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Supply Current:

360 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

13 mm

Trade Compliance

71V3556SA166BQGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Renesas Electronics

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