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71V3557S75PFGI8

Integrated Device Technology

71V3557S75PFGI8 by Integrated Device Technology

ZBT SRAM; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;

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Vyrian

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Nova Conductors

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AZTECH Wire

Italy . 762 parts In-Stock

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Semicontronic

India . 1,294 parts In-Stock

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Ampacity Inc.

Singapore . 804 parts In-Stock

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Component Stockers USA

USA . 655 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Microchip USA

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Bastille Electronics

Australia . 300 parts In-Stock

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Technical Specifications

SRAM 71V3557S75PFGI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

JESD-609 Code:

e3

Memory IC Type:

Moisture Sensitivity Level (MSL):

3

Peak Reflow Temperature (C):

260

Terminal Finish:

TIN

Trade Compliance

71V3557S75PFGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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