Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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UPD44325094BF5-E33-FQ1-A
Renesas Electronics
QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 4MX9;
.45 ns
300 MHz
SEPARATE
R-PBGA-B165
17 mm
37748736 bit
QDR SRAM
9
1
165
4194304 words
4M
SYNCHRONOUS
70 Cel
0 Cel
4MX9
3-STATE
PLASTIC/EPOXY
LBGA
BGA165,11X15,40
RECTANGULAR
GRID ARRAY, LOW PROFILE
PARALLEL
1.5/1.8,1.8
Not Qualified
1.46 mm
.39 Amp
1.7 V
SRAMs
520 mA
1.9 V
1.8
YES
CMOS
COMMERCIAL
BALL
1 mm
BOTTOM
15 mm
UPD44325362BF5-E50-FQ1-A
QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;
200 MHz
36
1048576 words
1M
1MX36
.32 Amp
590 mA
UPD44324182BF5-E40-FQ1
DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;
PIPELINED ARCHITECTURE
250 MHz
COMMON
DDR SRAM
18
2097152 words
2M
2MX18
.38 Amp
1.4 V
430 mA
UPD44325092BF5-E40-FQ1
QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
.3 Amp
510 mA
UPD44325182BF5-E40-FQ1
QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Access Time: .45 ns;
e0
.31 Amp
610 mA
TIN LEAD
CY62177ESL-55ZXI
Cypress Semiconductor
CY62177ESL-55ZXI by Cypress Semiconductor is a 2MX16 SRAM with 55 ns access time, operating at 3.6V. It features a small outline package, suitable for industrial applications requiring fast and reliable memory access in harsh environments. With 48 terminals and 16-bit memory width, it offers high-density storage in a compact form factor.
55 ns
ALSO OPERATES AT 5V SUPPLY
8
R-PDSO-G48
e3
18.4 mm
33554432 bit
STANDARD SRAM
16
3
48
ASYNCHRONOUS
85 Cel
-40 Cel
2MX16
TSOP1
TSSOP48,.8,20
SMALL OUTLINE, THIN PROFILE
260
2.5/3.3,5
1.2 mm
.000017 Amp
1.5 V
45 mA
3.6 V
2.2 V
INDUSTRIAL
MATTE TIN
GULL WING
.5 mm
DUAL
20
12 mm
UPD44164182BF5-E33Y-EQ3-A
DDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX18;
18874368 bit
1MX18
13 mm
UPD44164185BF5-E33Y-EQ3-A
DDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Width: 18;
UPD44165182BF5-E33-EQ3
QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;
UPD44165182BF5-E50Y-EQ3-A
QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Surface Mount: YES;
UPD44165184BF5-E33-EQ3
QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
UPD44165364BF5-E40-EQ3
QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, LOW PROFILE;
524288 words
512K
512KX36
SMV512K32HFG
Texas Instruments
Texas Instruments' SMV512K32HFG is a 512Kx32 SRAM with 22MHz clock frequency, operating at -55 to 125°C. It features common I/O type, 3-STATE output characteristics, and gold terminal finish. Ideal for military applications requiring fast access times and low standby current consumption.
20 ns
22 MHz
R-CQFP-F76
e4
25.31 mm
16777216 bit
32
76
125 Cel
-55 Cel
512KX32
CERAMIC, METAL-SEALED COFIRED
GQFF
TPAK76,2SQ,25
FLATPACK, GUARD RING
38535V;38534K;883S
2.67 mm
.00033 Amp
635 mA
3 V
MILITARY
GOLD
FLAT
.64 mm
QUAD
20.46 mm
UPD44645182AF5-E40-FQ1-A
e1
75497472 bit
4MX18
630 mA
TIN SILVER COPPER
CY7C1665KV18-450BZXC
CY7C1665KV18-450BZXC by Cypress Semiconductor is a 4MX36 QDR SRAM with 450 MHz clock frequency, 1.8V supply, and 0.45ns access time. Ideal for high-speed applications requiring fast data processing and low power consumption in commercial-grade environments.
450 MHz
150994944 bit
4MX36
1.4 mm
.46 Amp
1290 mA
CY7C1021BN-15VXET
CY7C1021BN-15VXET by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time, operating at 5V. It features a small outline package and is suitable for automotive applications due to AEC-Q100 screening level. With common I/O type and 3-state output characteristics, it offers reliable memory storage in harsh environments.
15 ns
R-PDSO-J44
28.575 mm
1048576 bit
44
65536 words
64K
64KX16
SOJ
SOJ44,.44
SMALL OUTLINE
5
AEC-Q100
3.7592 mm
.015 Amp
4.5 V
130 mA
5.5 V
AUTOMOTIVE
NICKEL PALLADIUM GOLD
J BEND
1.27 mm
10.16 mm
CY7C1021BN-15ZSXET
CY7C1021BN-15ZSXET by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It is designed for automotive applications, featuring a small outline package and thin profile. The memory IC has a max standby current of 0.015A and offers 3-STATE output characteristics.
R-PDSO-G44
18.415 mm
TSOP2
TSOP44,.46,32
1.194 mm
.8 mm
CY7C1041DV33-10BVIT
CY7C1041DV33-10BVIT by Cypress Semiconductor is a 256Kx16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast and reliable parallel memory storage in a compact grid array package.
10 ns
R-PBGA-B48
8 mm
4194304 bit
262144 words
256K
256KX16
VFBGA
BGA48,6X8,30
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
3.3
.01 Amp
2 V
90 mA
.75 mm
6 mm
CY7C1041DV33-10BVJXIT
CY7C1041DV33-10BVJXIT by Cypress is a 256Kx16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast, common I/O asynchronous memory in a compact grid array package.
Tin/Silver/Copper (Sn/Ag/Cu)
CY7C1049D-10VXIT
CY7C1049D-10VXIT by Cypress is a 512Kx8 SRAM with 10ns access time, operating at 5V. It features a small outline package and 3-state output, suitable for industrial applications requiring fast and reliable memory storage. With parallel interface and common I/O type, it offers high performance in a compact form factor.
R-PDSO-J36
23.495 mm
512KX8
SOJ36,.44
Nickel/Palladium/Gold (Ni/Pd/Au)
40
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 175mA supply current. Ideal for industrial applications requiring fast and reliable parallel memory storage in a compact grid array package.
9.5 mm
1MX16
.025 Amp
175 mA
CY7C1061DV33-10ZSXIT
CY7C1061DV33-10ZSXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 175mA max supply current. Ideal for industrial applications requiring high-speed memory operations in a compact thin profile package.
R-PDSO-G54
22.415 mm
54
TSOP54,.46,32
Matte Tin (Sn)
CY7C1069DV33-10ZSXIT
CY7C1069DV33-10ZSXIT by Cypress Semiconductor is a 3.3V SRAM with 2Mx8 organization, operating at -40 to 85°C. It features a fast access time of 10ns, ideal for industrial applications requiring high-speed memory solutions in a compact thin profile package.
2MX8
CY7C1380D-167AXCT
CY7C1380D-167AXCT by Cypress Semiconductor is a 512Kx36 SRAM with synchronous operation and 3-STATE output. It operates at a max clock frequency of 167 MHz, suitable for applications requiring fast access times such as networking equipment and high-performance computing systems. With a low profile flatpack package style and common I/O type, it offers reliable performance in compact designs.
3.4 ns
167 MHz
R-PQFP-G100
20 mm
100
LQFP
QFP100,.63X.87
FLATPACK, LOW PROFILE
2.5/3.3,3.3
1.6 mm
.07 Amp
275 mA
3.135 V
.65 mm
14 mm
CY7C199CNL-15VXIT
CY7C199CNL-15VXIT by Cypress Semiconductor is a 32Kx8 SRAM with 3-STATE output, operating at -40 to 85°C. It has a supply voltage of 4.5-5.5V and max access time of 15ns. Ideal for industrial applications requiring fast, asynchronous memory with common I/O type in small outline package.
R-PDSO-J28
17.907 mm
262144 bit
28
32768 words
32K
32KX8
SOJ28,.34
3.556 mm
.00015 Amp
80 mA
30
7.5 mm
CY7C199D-10ZXIT
CY7C199D-10ZXIT by Cypress Semiconductor is a 32Kx8 SRAM with 10ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.
R-PDSO-G28
11.8 mm
TSSOP28,.53,22
.003 Amp
.55 mm
MT45W2MW16BGB-708AT
Micron Technology
SRAMs; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;
70 ns
R-PBGA-B54
105 Cel
FBGA
BGA54,6X9,30
GRID ARRAY, FINE PITCH
1.8,1.8/3.3
.00011 Amp
Other Memory ICs
35 mA
N02L63W3AT25I
Onsemi
N02L63W3AT25I by Onsemi is a 128Kx16 SRAM with 131072 words, operating at 2.5/3.3V. It features a max access time of 70ns and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in compact electronic devices.
18.41 mm
2097152 bit
131072 words
128K
128KX16
LSSOP
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
2.5/3.3
1.25 mm
.00001 Amp
1.8 V
16 mA
2.3 V
CY7C1061AV33-10ZXCT
CY7C1061AV33-10ZXCT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, operating in asynchronous mode. It features 10ns access time, 70°C max temp, and 275mA supply current. Ideal for applications requiring fast memory access in commercial-grade devices.
.05 Amp
CY7C1061AV33-10ZXIT
CY7C1061AV33-10ZXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 16-bit memory width. Ideal for industrial applications requiring fast and reliable parallel memory operations in a compact package.
IS61WV25616EDBLL-10BLI-TR
Integrated Silicon Solution
IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 3V. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access time of 10ns and low standby current consumption of 0.006A.
APPLICATION SPECIFIC SRAM
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
.006 Amp
2.4 V
IS61WV25616EDBLL-8BLI-TR
IS61WV25616EDBLL-8BLI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with 8 ns access time, operating at 3.6V max voltage. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast, common I/O type memory with low standby current of 0.006 Amp.
8 ns
IS61WV25616EDBLL-8BLI
IS61WV25616EDBLL-8BLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous operation, common I/O type, and 8ns max access time. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
3.63 V
2.97 V
IS61WV25616EDBLL-8TLI-TR
IS61WV25616EDBLL-8TLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. Ideal for industrial applications, it offers fast access time of 8ns and low standby current of 0.006Amp. With a compact design and common I/O type, this CMOS technology-based memory IC is suitable for various parallel data processing tasks.
IS61WV25616EDBLL-8TLI
IS61WV25616EDBLL-8TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous mode, common I/O type, and 8ns access time. Ideal for applications requiring fast and reliable memory storage in compact form factor.
CY7C1347G-133AXCT
CY7C1347G-133AXCT by Cypress Semiconductor is a 128KX36 ZBT SRAM with 133 MHz clock frequency, 4 ns access time, and 3.3V supply voltage. Ideal for high-speed synchronous applications requiring fast memory access and low power consumption in commercial-grade environments.
4 ns
133 MHz
4718592 bit
ZBT SRAM
128KX36
.04 Amp
3.14 V
225 mA
AS6C4008A-55ZIN
Alliance Memory
Alliance Memory's AS6C4008A-55ZIN is a 512Kx8 SRAM with 55ns access time, operating at 3.6V max voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and gull wing terminals, this memory IC offers reliable performance in harsh environments.
R-PDSO-G32
e3/e6
20.95 mm
2.7 V
11.76 mm
23A1024-I/P
Microchip Technology
Microchip Technology's 23A1024-I/P is a CMOS SRAM with 128KX8 organization, operating at 1.8/2V. It features synchronous operation, 20MHz clock frequency, and 131072 words capacity. Ideal for industrial applications requiring reliable memory storage in a compact IN-LINE package style.
20 MHz
COMMON/SEPARATE
R-PDIP-T8
9.271 mm
128KX8
NO
DIP
DIP8,.3
IN-LINE
SERIAL
1.8/2
TS 16949
5.334 mm
.000004 Amp
10 mA
THROUGH-HOLE
2.54 mm
7.62 mm
23LCV512-I/P
23LCV512-I/P by Microchip Technology is a 64KX8 SRAM with 20 MHz clock frequency, operating at -40 to 85 °C. It features a serial interface, 3-STATE output, and common I/O type. Ideal for industrial applications requiring high-speed synchronous memory in a compact IN-LINE package.
524288 bit
64KX8
2.5 V
IS61WV6416EEBLL-10TLI
IS61WV6416EEBLL-10TLI by Integrated Silicon Solution is a 64Kx16 SRAM with 10ns access time, operating at 3.3V. It features a small outline package, suitable for industrial temperature grades. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
.004 Amp
25 mA
AS7C316096A-10TINTR
Alliance Memory's AS7C316096A-10TINTR is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, common I/O type, and 3-state output characteristics.
3/3.3
160 mA
AS7C316096A-10TIN
Alliance Memory's AS7C316096A-10TIN is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, 48 terminals, and common I/O type. With a memory density of 16Mbit, this CMOS technology-based chip offers reliable performance in various electronic devices.
AS6C3216-55TIN
Alliance Memory's AS6C3216-55TIN is a 2MX16 SRAM with 55 ns access time, operating at 3V. Ideal for industrial applications, it offers a memory density of 33554432 bits and features a small outline package with thin profile. With common I/O type and asynchronous operation, this CMOS technology-based SRAM is suitable for various parallel memory applications.
.002 Amp
1.2 V
AS7C316098A-10TIN
Alliance Memory's AS7C316098A-10TIN is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and offers 3-state output capability. With a max supply voltage of 3.6V, this CMOS technology memory chip supports parallel operation with common I/O type.
IS61LPS25618EC-200TQLI
IS61LPS25618EC-200TQLI by Integrated Silicon Solution is a 256KX18 CACHE SRAM with 3-STATE output, operating at up to 200 MHz. It features a low profile FLATPACK package and operates in industrial temperature range. Ideal for applications requiring fast access time and high memory density.
3.1 ns
CACHE SRAM
256KX18
.085 Amp
220 mA
3.465 V
10
IS61VPS204836B-250B3LI
IS61VPS204836B-250B3LI by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 250 MHz clock frequency, 2.5V supply voltage, and 2.6 ns access time. It is ideal for industrial applications requiring fast and synchronous memory operations in a compact GRID ARRAY package with thin profile design.
2.6 ns
2MX36
TBGA
GRID ARRAY, THIN PROFILE
2.5
2.38 V
2.625 V
2.375 V
UPD46184182BF1-E40-EQ1
DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Access Time: .45 ns;
NOT SPECIFIED
UPD46184184BF1-E40-EQ1-A
DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;
e6
400 mA
TIN BISMUTH
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