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AS7C316096A-10TIN

Alliance Memory

AS7C316096A-10TIN by Alliance Memory

Alliance Memory's AS7C316096A-10TIN is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, 48 terminals, and common I/O type. With a memory density of 16Mbit, this CMOS technology-based chip offers reliable performance in various electronic devices.

Median Price

$41.080

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 128 parts In-Stock

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$40.920

100+ parts

$34.878

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$33.486

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128

$40.920

$34.878

$33.486

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Mouser Electronics

USA . 56 parts In-Stock

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$41.240

100+ parts

$35.070

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Nova Conductors

Japan . 17 parts In-Stock

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$18.910

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Vyrian

USA . 8,254 parts In-Stock

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VNN

France . 648 parts In-Stock

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648

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Kruse

Germany . 519 parts In-Stock

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Kruse Electronics AG

Switzerland . 183 parts In-Stock

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ARCO, INC.

USA . 100 parts In-Stock

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AZTECH Wire

Italy . 777 parts In-Stock

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$5.095

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QUARKTWIN TECHNOLOGY LTD

USA . 18,026 parts In-Stock

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Authorized Procurement Solutions

USA . 238 parts In-Stock

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Robosynatics

Brazil . 150 parts In-Stock

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Lucentia Tech

USA . 150 parts In-Stock

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$4.213

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$3.901

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$3.901

150

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$4.213

$3.901

$3.901

Overview

Unlock unparalleled speed and reliability with the AS7C316096A-10TIN by Alliance Memory. As a leading manufacturer in the SRAM category, Alliance Memory delivers top-of-the-line products for a wide range of applications. With a focus on quality and performance, this memory chip offers customers exceptional value, benefits, and advantages. Experience seamless operation and increased efficiency with the AS7C316096A-10TIN, setting new standards in memory technology. Elevate your systems with Alliance Memory's cutting-edge solutions today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and protection for the internal components of the SRAM, ensuring a longer lifespan.

Surface Mount: YES

Surface mount design makes it easy to integrate this SRAM into a variety of electronic devices, saving space and simplifying assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in timing and data transfer, making this SRAM suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 3

Operating at a 3V supply voltage ensures compatibility with many electronic systems while providing efficient power consumption.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this SRAM energy-efficient and reliable for data storage.

Maximum Access Time: 10 ns

With a fast access time of 10 ns, this SRAM can quickly retrieve data, making it ideal for high-speed applications where performance is critical.

Technical Specifications

SRAM AS7C316096A-10TIN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.04 Amp

Minimum Standby Voltage:

1.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

160 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

12 mm

Trade Compliance

AS7C316096A-10TIN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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