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AS7C31025B-12JIN

Alliance Memory

AS7C31025B-12JIN by Alliance Memory

Alliance Memory's AS7C31025B-12JIN is a 128Kx8 SRAM with a max access time of 12ns. It operates asynchronously at a nominal voltage of 3.3V and is suitable for industrial applications.

Median Price

$6.850

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 59 parts In-Stock

1+ parts

$6.850

100+ parts

$6.030

1k+ parts

$5.530

10k+ parts

$5.460

59

$6.850

$6.030

$5.530

$5.460

Distributors (In-Stock)

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Nova Conductors

Japan . 76 parts In-Stock

1+ parts

$3.140

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76

$3.140

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VNN

France . 5,698 parts In-Stock

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5,698

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Vyrian

USA . 425 parts In-Stock

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425

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Bristol Electronics

USA . 64 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$3.077

100+ parts

-

1k+ parts

$2.954

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500

$3.077

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$2.954

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AZTECH Wire

Italy . 619 parts In-Stock

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$18.260

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QUARKTWIN TECHNOLOGY LTD

USA . 27,191 parts In-Stock

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Perfect Parts

USA . 24 parts In-Stock

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Overview

Experience the unparalleled quality and reliability of Alliance Memory with the AS7C31025B-12JIN. As a leading manufacturer in the industry, Alliance Memory delivers cutting-edge SRAM technology that is trusted by professionals worldwide. This versatile product finds applications in various industries, providing seamless performance and exceptional value to customers. With its compact size and high memory density, the AS7C31025B-12JIN offers a vast array of benefits and advantages, ensuring smooth operations and enhanced efficiency. Trust Alliance Memory for all your memory needs and unlock the true potential of your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and offers protection for the internal components of the SRAM, ensuring reliability in various environments.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation of the SRAM onto circuit boards, minimizing assembly time and simplifying the manufacturing process.

No. of Functions: 1

With a single function, this SRAM simplifies integration into circuit designs, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular package shape offers versatility in terms of fitment and space utilization, allowing the SRAM to be easily incorporated into various electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode enables independent and simultaneous read and write operations, providing flexibility and efficiency in accessing and storing data.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V ensures compatibility with common power sources, making it widely accessible and easy to incorporate into existing systems.

No. of Terminals: 32

With 32 terminals, this SRAM facilitates straightforward connections to other circuit components, enhancing integration capabilities and simplifying circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style facilitates space-saving installation of the SRAM, making it suitable for compact devices or crowded circuit boards.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this SRAM can withstand higher temperature environments, ensuring reliable performance in demanding conditions.

Organization: 128KX8

The organization of 128KX8 indicates that the SRAM has a capacity of 128 kilobits, arranged in an 8-bit configuration, allowing for efficient storage and retrieval of data.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40°C enables this SRAM to function reliably in cold environments, making it suitable for a wide range of applications.

Terminal Position: DUAL

The dual terminal position allows for convenient placement and connection of the SRAM, ensuring easy integration within electronic circuits.

Maximum Seated Height: 3.7084 mm

With a maximum seated height of 3.7084mm, this SRAM is compact and low-profile, making it suitable for slim devices or applications with strict height limitations.

Width: 10.16 mm

The width of 10.16mm ensures easy integration into circuit designs, providing flexibility in the layout and application of the SRAM.

Minimum Supply Voltage (Vsup): 3 V

The minimum supply voltage of 3V ensures compatibility with lower power sources, adding versatility to potential applications.

Length: 20.955 mm

The length of 20.955mm allows for flexible placement and integration of the SRAM within electronic devices or circuit boards.

Temperature Grade: INDUSTRIAL

A temperature grade labeled as "INDUSTRIAL" suggests that this SRAM is designed to operate reliably in industrial settings, making it a suitable choice for rugged applications.

Technology: CMOS

The use of CMOS technology allows the SRAM to operate at low power consumption while delivering fast and efficient performance, making it an energy-efficient option.

Parallel or Serial: PARALLEL

The parallel interface of this SRAM facilitates high-speed data transfer and simultaneous access to memory locations, offering enhanced performance for applications requiring quick access to large datasets.

Terminal Form: J BEND

The J bend terminal form enables efficient and secure connection between the SRAM and other circuit components, ensuring reliable transmission of signals.

No. of Words: 131072 words

With a capacity of 131,072 words, this SRAM can store and retrieve a significant amount of data, accommodating the needs of memory-intensive applications.

Memory Width: 8

The 8-bit memory width allows for efficient utilization of the data bus, ensuring seamless integration into existing circuit designs or systems.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27mm provides sufficient space for easy and accurate soldering or connection, enhancing the reliability and ease of use of the SRAM.

No. of Words Code: 128K

The "128K" words code indicates that this SRAM has a capacity of 128 kilobits, providing ample storage for various data-intensive applications.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, this SRAM can withstand moderate moisture exposure during handling and assembly, ensuring its reliability and longevity.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V ensures compatibility with a wide range of power sources, offering flexibility in system integration.

Memory Density: 1048576 bit

With a memory density of 1,048,576 bits, this SRAM can efficiently store large amounts of data, making it suitable for high-performance applications.

Memory IC Type: STANDARD SRAM

Being a standard SRAM, this product offers reliable and widely supported memory functionality, making it a practical and dependable choice.

Maximum Access Time: 12 ns

With a maximum access time of 12 nanoseconds, this SRAM provides fast and responsive data access, ensuring efficient operations in time-sensitive applications.

Technical Specifications

SRAM AS7C31025B-12JIN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

12 ns

JESD-30 Code:

R-PDSO-J32

JESD-609 Code:

e3/e6

Length:

20.955 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Maximum Seated Height:

3.7084 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

AS7C31025B-12JIN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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