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AS7C38096A-10TIN

Alliance Memory

AS7C38096A-10TIN by Alliance Memory

Alliance Memory's AS7C38096A-10TIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it offers a memory density of 8388608 bits and operates in parallel mode with a package size of 18.415mm x 10.16mm x 1.2mm.

Median Price

$25.950

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 238 parts In-Stock

1+ parts

$25.950

100+ parts

$22.150

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$21.410

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238

$25.950

$22.150

$21.410

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Nova Conductors

Japan . 15 parts In-Stock

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$11.490

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Vyrian

USA . 6,178 parts In-Stock

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VNN

France . 4,835 parts In-Stock

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Kruse Electronics AG

Switzerland . 3,555 parts In-Stock

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ARCO, INC.

USA . 3,500 parts In-Stock

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Kruse

Germany . 716 parts In-Stock

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Cyclops Electronics Ltd

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,894 parts In-Stock

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$4.143

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AZTECH Wire

Italy . 432 parts In-Stock

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$7.859

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Continental Prestige Electronics

USA . 3,117 parts In-Stock

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$11.490

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$11.260

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Netroflash

USA . 100 parts In-Stock

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$11.490

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Component Stockers USA

USA . 1,401 parts In-Stock

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$13.990

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$11.060

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Authorized Procurement Solutions

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Argo Parts USA

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Overview

Experience the superior quality and reliability of Alliance Memory with the AS7C38096A-10TIN SRAM chip. Ideal for industrial applications, this memory device offers fast access times and a wide operating temperature range. With a compact design and advanced CMOS technology, this product provides high performance in a small package. Trust Alliance Memory to deliver top-notch products that meet your needs and exceed your expectations. Upgrade your systems with the AS7C38096A-10TIN for improved efficiency and seamless operation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product durable and lightweight, ideal for a variety of applications.

Surface Mount: YES

The surface mount feature facilitates easy and flexible installation on circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V nominal supply voltage ensures compatibility with a wide range of systems and devices, offering reliable performance.

No. of Terminals: 44

Having 44 terminals allows for efficient connectivity and communication within the system, enhancing overall functionality.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode enables independent and simultaneous access to memory cells, improving overall speed and efficiency.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this product can withstand high temperature environments, ensuring reliable performance in various conditions.

Memory IC Type: STANDARD SRAM

Being a standard SRAM memory IC type, this product offers proven reliability and performance, making it a dependable choice for memory storage requirements.

Technical Specifications

SRAM AS7C38096A-10TIN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

10 ns

JESD-30 Code:

R-PDSO-G44

Length:

18.415 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

10.16 mm

Trade Compliance

AS7C38096A-10TIN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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