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AS7C1024B-12JIN

Alliance Memory

AS7C1024B-12JIN by Alliance Memory

Alliance Memory's AS7C1024B-12JIN is a 128KX8 SRAM with a max access time of 12 ns. It operates asynchronously and has a common input/output type. This memory IC is commonly used in industrial applications requiring fast and reliable data storage.

Median Price

$3.410

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 80 parts In-Stock

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$3.410

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$2.980

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$2.810

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80

$3.410

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Nova Conductors

Japan . 150 parts In-Stock

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$2.770

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$2.770

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Kruse Electronics AG

Switzerland . 3,888 parts In-Stock

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ARCO, INC.

USA . 3,800 parts In-Stock

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Kruse

Germany . 936 parts In-Stock

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VNN

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Vyrian

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AZTECH Wire

Italy . 523 parts In-Stock

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$9.617

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Eastek

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GreenTree Electronics

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Overview

Discover the AS7C1024B-12JIN by Alliance Memory, a high-quality SRAM that offers unmatched performance and reliability. As a leading manufacturer in the industry, Alliance Memory is known for delivering exceptional products that meet the demands of various applications. Whether you're working on industrial automation, telecommunications, or consumer electronics, this product offers valuable benefits such as efficient power consumption, seamless integration, and fast access times. With its compact package design and wide operating temperature range, the AS7C1024B-12JIN provides the perfect solution for your memory needs. Upgrade your projects with confidence and experience the advantages that Alliance Memory brings to the table.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY. This material provides durability and protection for the SRAM, making it a reliable choice for long-term usage.

Surface Mount:

YES. This feature allows for easy installation and integration into various electronic devices, making it convenient for manufacturers.

No. of Functions:

1. With a single function, this SRAM simplifies the design and implementation process, making it suitable for simple applications.

Package Shape:

RECTANGULAR. The rectangular shape offers versatility and compatibility with different circuit boards, ensuring seamless integration.

Operating Mode:

ASYNCHRONOUS. The asynchronous operation enables flexible timing and independent read/write access, making it adaptable to a wide range of applications.

Input/Output Type:

COMMON. The common input/output type simplifies the interface connection, promoting compatibility and ease of use.

Nominal Supply Voltage / Vsup (V):

5. The SRAM operates at a stable supply voltage of 5V, ensuring reliable performance and compatibility with standard electronic devices.

Power Supplies (V):

5. With a consistent power supply of 5V, this SRAM maintains stable operation and reduces the risk of voltage-related issues.

No. of Terminals:

32. The 32 terminals allow for efficient connection and signal transfer, supporting the smooth functioning of the SRAM in a compact form factor.

Package Style (Meter):

SMALL OUTLINE. The small outline package style offers space-saving benefits, making it ideal for applications with limited board area.

Maximum Operating Temperature:

85 °C. The high maximum operating temperature ensures reliability and suitability for industrial or demanding environments.

Organization:

128KX8. The 128Kx8 organization provides a high memory capacity (128 kilobits) with a byte-wide parallel data interface (8 bits), making it suitable for data-intensive applications.

Output Characteristics:

3-STATE. The 3-STATE output characteristics enable multiple devices to share a common bus, optimizing system resources and promoting efficient communication.

Minimum Standby Voltage:

4.5 V. The low minimum standby voltage allows for power-saving operation when the SRAM is not actively in use, contributing to energy efficiency.

Minimum Operating Temperature:

40 °C. The low minimum operating temperature ensures reliable performance in extreme cold environments, making it suitable for various applications.

Terminal Position:

DUAL. The dual terminal position provides flexibility in PCB layout and facilitates easier integration with other components, improving overall system design.

Maximum Seated Height:

3.7084 mm. The product's compact maximum seated height facilitates space-efficient installation and reduces the overall size of electronic devices.

Width:

10.16 mm. The compact width of the SRAM supports space-saving designs, allowing for integration into various electronic applications.

Minimum Supply Voltage (Vsup):

4.5 V. The low minimum supply voltage ensures compatibility with low-power devices while maintaining reliable operation.

Length:

20.995 mm. The product's length offers compatibility with standard board sizes and facilitates straightforward integration into electronic systems.

Temperature Grade:

INDUSTRIAL. The industrial temperature grade ensures reliable operation in harsh and demanding environments, enhancing the product's suitability for industrial applications.

Technology:

CMOS. Utilizing complementary metal-oxide-semiconductor (CMOS) technology, this SRAM delivers low power consumption and high-speed performance, making it an efficient choice.

Parallel or Serial:

PARALLEL. The parallel data transmission enables high-speed and simultaneous transfer, making it suitable for applications that require fast access to large amounts of data.

Terminal Form:

J BEND. The J bend terminal form simplifies the soldering and connection process, enhancing ease of installation and reducing assembly time.

Maximum Supply Current:

100 mA. The SRAM's maximum supply current of 100 mA ensures stable and reliable performance, meeting the power requirements of various applications.

No. of Words:

131072 words. With a large number of words (131,072) stored in its memory, this SRAM can handle substantial data storage requirements.

Memory Width:

8. The SRAM's 8-bit memory width facilitates efficient data processing and compatibility with diverse electronic systems.

Terminal Pitch:

1.27 mm. The 1.27 mm terminal pitch provides compatibility with standard sockets and facilitates easy connection and PCB layout.

No. of Words Code:

128K. The 128K word code signifies the high memory capacity of the SRAM, offering ample space for storing and accessing data.

Moisture Sensitivity Level (MSL):

3. The moisture sensitivity level of 3 indicates good resistance to moisture during handling and storage, ensuring product reliability.

Maximum Supply Voltage (Vsup):

5.5 V. The high maximum supply voltage ensures compatibility with devices requiring higher voltage levels, expanding the range of compatible applications.

Memory Density:

1048576 bit. This SRAM features a large memory density of 1,048,576 bits, providing ample storage capacity for extensive data requirements.

Memory IC Type:

STANDARD SRAM. Being a standard SRAM, this product offers reliable and well-tested memory capabilities, providing a robust solution for various applications.

Maximum Standby Current:

0.01 Amp. The low maximum standby current of 0.01 Amp reduces power consumption during idle periods, contributing to energy efficiency.

Maximum Access Time:

12 ns. The fast maximum access time of 12 ns ensures rapid data access and retrieval, making it suitable for applications requiring quick data processing.

Technical Specifications

SRAM AS7C1024B-12JIN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

12 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-J32

Length:

20.995 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ32,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.7084 mm

Maximum Standby Current:

.01 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

AS7C1024B-12JIN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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