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AS7C1024B-12JCN

Alliance Memory

AS7C1024B-12JCN by Alliance Memory

Alliance Memory's AS7C1024B-12JCN is a 128Kx8 SRAM with a max access time of 12ns. It operates asynchronously at a nominal voltage of 5V and has a small outline package style, making it suitable for various memory-intensive applications.

Median Price

$5.645

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 36 parts In-Stock

1+ parts

$4.480

100+ parts

$4.070

1k+ parts

$3.580

10k+ parts

$3.450

36

$4.480

$4.070

$3.580

$3.450

DigiKey

USA . 12 parts In-Stock

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$6.810

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12

$6.810

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Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$2.618

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870

$2.618

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Kruse

Germany . 16,498 parts In-Stock

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Kruse Electronics AG

Switzerland . 8,350 parts In-Stock

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ARCO, INC.

USA . 8,300 parts In-Stock

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8,300

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VNN

France . 3,742 parts In-Stock

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Vyrian

USA . 67 parts In-Stock

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Component Sense

UK . 42 parts In-Stock

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AZTECH Wire

Italy . 251 parts In-Stock

1+ parts

$18.098

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$18.098

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QUARKTWIN TECHNOLOGY LTD

USA . 20,547 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Perfect Parts

USA . 28 parts In-Stock

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Overview

Discover the AS7C1024B-12JCN by Alliance Memory, a high-quality SRAM that offers unmatched performance and reliability. With Alliance Memory's reputation for excellence in memory solutions, you can trust that this product is built to last. Ideal for a variety of applications, this SRAM provides exceptional value and benefits to customers. Its compact package shape and surface mount capability make it easy to integrate into any design. Experience the advantages of the AS7C1024B-12JCN and elevate your projects to new heights of efficiency and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Compatible with a standard voltage level widely used in electronic systems, making it versatile and easy to integrate.

No. of Terminals: 32

Offers sufficient connectivity options for interfacing with other devices and components in a system.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures, making it suitable for use in various environments without performance degradation.

Memory Density: 1048576 bit

Provides a large storage capacity for data, enabling the product to handle a significant amount of information efficiently.

Technical Specifications

SRAM AS7C1024B-12JCN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

12 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-J32

Length:

20.995 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ32,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.7084 mm

Maximum Standby Current:

.01 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

AS7C1024B-12JCN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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