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AS7C1024B-12TJIN

Alliance Memory

AS7C1024B-12TJIN by Alliance Memory

Alliance Memory's AS7C1024B-12TJIN is a 128Kx8 SRAM with 12ns access time, operating at 5V. Ideal for industrial applications, it features asynchronous operation, 3-STATE output, and common I/O type in a small outline package.

Median Price

$2.240

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Avnet

USA . 601 parts In-Stock

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Nova Conductors

Japan . 39 parts In-Stock

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$2.240

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VNN

France . 2,920 parts In-Stock

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Vyrian

USA . 646 parts In-Stock

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Kruse Electronics AG

Switzerland . 628 parts In-Stock

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Kruse

Germany . 628 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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$2.240

100+ parts

$2.128

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$2.022

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$1.994

300

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$2.022

$1.994

AZTECH Wire

Italy . 725 parts In-Stock

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$17.079

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Overview

Experience the unmatched quality and reliability of Alliance Memory's AS7C1024B-12TJIN SRAM memory. Perfect for a wide range of industrial applications, this memory module offers fast access times and low power consumption, ensuring optimal performance for your projects. With a compact design and advanced CMOS technology, this memory provides seamless operation in demanding environments. Trust Alliance Memory to deliver superior products that meet your needs for high-performance memory solutions. Elevate your designs with the AS7C1024B-12TJIN SRAM memory from Alliance Memory.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the SRAM, ensuring reliable performance over time.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and reducing costs.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common and stable voltage, making it compatible with a wide range of systems.

Operating Mode: ASYNCHRONOUS

Enables flexible and independent operation without the need for synchronization signals, simplifying system design.

Memory Density: 1048576 bit

Offers a high memory density, allowing for storage of large amounts of data in a compact form factor.

Maximum Access Time: 12 ns

Provides fast read and write access times, ensuring quick data retrieval and processing.

Technical Specifications

SRAM AS7C1024B-12TJIN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

12 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-J32

Length:

20.995 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ32,.34

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

245

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.683 mm

Maximum Standby Current:

.01 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

7.62 mm

Trade Compliance

AS7C1024B-12TJIN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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