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IDT70V631S12PRFI8

Integrated Device Technology

IDT70V631S12PRFI8 by Integrated Device Technology

IDT70V631S12PRFI8 by Integrated Device Technology is a 256Kx18 MULTI-PORT SRAM with 3.3V nominal voltage, operating in SYNCHRONOUS mode. It features a low profile FLATPACK package and offers fast access time of 12 ns. Ideal for industrial applications requiring high-speed memory solutions.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,181 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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AZTECH Wire

Italy . 560 parts In-Stock

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$19.244

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560

$19.244

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Ampacity Inc.

Singapore . 311 parts In-Stock

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$25.000

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Continental Prestige Electronics

USA . 3,545 parts In-Stock

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Argo Parts USA

USA . 2,790 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Overview

Unlock the full potential of your next project with the IDT70V631S12PRFI8 by Integrated Device Technology. As a leader in SRAM technology, IDT delivers unparalleled quality and reliability. Ideal for a variety of applications, this multi-port SRAM provides seamless operation in industrial settings, offering a memory density of 4718592 bits and a maximum access time of just 12 ns. With a nominal supply voltage of 3.3V, 256Kx18 organization, and 3-state output characteristics, this device ensures optimal performance and efficiency. Elevate your designs with the IDT70V631S12PRFI8 and experience enhanced functionality like never before.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides a durable and cost-effective housing for the SRAM, making it suitable for various applications.

Surface Mount:

YES - This feature allows for easy and convenient installation of the SRAM on circuit boards, saving time and effort during assembly.

Package Shape:

RECTANGULAR - The rectangular shape of the package offers a compact design, optimizing space on the circuit board for efficient layout.

Operating Mode:

SYNCHRONOUS - The synchronous operation ensures reliable and synchronized data transfers, making it ideal for high-performance systems.

Input/Output Type:

COMMON - Common input/output type simplifies connectivity and integration with other components in the system, enhancing compatibility.

Nominal Supply Voltage / Vsup (V):

3.3 - The 3.3V supply voltage ensures stable and consistent power delivery, supporting reliable performance of the SRAM.

Power Supplies (V):

2.5/3.3,3.3 - Multiple power supply options provide flexibility for different system requirements, allowing for versatile applications.

No. of Terminals:

128 - The large number of terminals enables efficient data transfer and connectivity with other components, enhancing overall system functionality.

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH - The flatpack, low profile, and fine pitch package styles offer space-saving solutions and high-density integration for optimized PCB layout.

Maximum Operating Temperature:

85 °C - With a maximum operating temperature of 85°C, the SRAM can withstand high-temperature environments, ensuring reliable operation in various conditions.

Technical Specifications

SRAM IDT70V631S12PRFI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

12 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PQFP-G128

JESD-609 Code:

e0

Length:

20 mm

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

18

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

128

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX18

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP128,.63X.87,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

2.5/3.3,3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.015 Amp

Minimum Standby Voltage:

3.15 V

Sub-Category:

SRAMs

Maximum Supply Current:

515 mA

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn85Pb15)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

IDT70V631S12PRFI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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