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IDT71V3576S150PFGI8

Renesas Electronics

IDT71V3576S150PFGI8 by Renesas Electronics

The Renesas Electronics IDT71V3576S150PFGI8 is a 128Kx36 SRAM with synchronous operation at 150 MHz. It features a 3-STATE output and operates at an industrial temperature range of -40 to 85°C. Ideal for applications requiring fast access times and high memory density.

Median Price

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< 1k

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Vyrian

USA . 543 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Semicontronic

India . 761 parts In-Stock

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$5.000

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$4.875

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$4.850

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761

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AZTECH Wire

Italy . 559 parts In-Stock

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$15.378

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Ampacity Inc.

Singapore . 462 parts In-Stock

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$19.000

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Argo Parts USA

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Continental Prestige Electronics

USA . 2,327 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the Renesas Electronics IDT71V3576S150PFGI8, a top-of-the-line SRAM memory chip designed for industrial applications. Renowned for its cutting-edge technology and superior quality, Renesas Electronics delivers a product that guarantees seamless operation and optimal efficiency. Ideal for high-speed data processing and storage, this memory chip offers customers a competitive edge by providing lightning-fast access times and a wide memory width of 36 bits. Invest in the IDT71V3576S150PFGI8 today and elevate your projects to new heights of success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and transportation.

Surface Mount: YES

Allows for easy installation on circuit boards without the need for additional hardware.

Operating Mode: SYNCHRONOUS

Allows for precise synchronization of data transfer, reducing errors and improving overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage level for efficient and stable operation.

Maximum Clock Frequency (fCLK): 150 MHz

High clock frequency for fast data processing and retrieval.

Technology: CMOS

CMOS technology ensures low power consumption and high reliability.

Maximum Access Time: 3.8 ns

Quick access time ensures fast data retrieval and processing.

Technical Specifications

SRAM IDT71V3576S150PFGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

3.8 ns

Maximum Clock Frequency (fCLK):

150 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PQFP-G100

JESD-609 Code:

e3

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

100

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Equivalence Code:

QFP100,.63X.87

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Standby Current:

.035 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

260 mA

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

IDT71V3576S150PFGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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