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IS61WV25616EDBLL-8BLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-8BLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-8BLI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with 8 ns access time, operating at 3.6V max voltage. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast, common I/O type memory with low standby current of 0.006 Amp.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,918 parts In-Stock

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Nova Conductors

Japan . 31 parts In-Stock

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31

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 346 parts In-Stock

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$7.635

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346

$7.635

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Continental Prestige Electronics

USA . 5,964 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Argo Parts USA

USA . 900 parts In-Stock

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900

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Overview

Unlock the power of cutting-edge technology with the IS61WV25616EDBLL-8BLI-TR by Integrated Silicon Solution. This high-quality SRAM memory chip offers unparalleled performance and reliability, making it the perfect choice for a wide range of applications. With its sleek design and advanced features, this product provides exceptional value and benefits to customers looking for top-of-the-line memory solutions. Experience seamless operation and enhanced efficiency with the IS61WV25616EDBLL-8BLI-TR - the ultimate choice for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability to the product while keeping it lightweight and cost-effective.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 3

Optimal voltage rating for stable and efficient operation of the SRAM.

Maximum Operating Temperature: 85 °C

Ensures reliability in a wide range of environments, making it suitable for industrial applications.

Memory Density: 4194304 bit

Offers high storage capacity, making it suitable for applications requiring large amounts of data to be processed.

Maximum Access Time: 8 ns

Provides fast data access speeds, improving overall performance of the product.

Technical Specifications

SRAM IS61WV25616EDBLL-8BLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

8 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e3

Length:

8 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

48

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.4 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

IS61WV25616EDBLL-8BLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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