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IS61VPS204836B-250B3LI

Integrated Silicon Solution

IS61VPS204836B-250B3LI by Integrated Silicon Solution

IS61VPS204836B-250B3LI by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 250 MHz clock frequency, 2.5V supply voltage, and 2.6 ns access time. It is ideal for industrial applications requiring fast and synchronous memory operations in a compact GRID ARRAY package with thin profile design.

Median Price

$122.130

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 86 parts In-Stock

1+ parts

$122.130

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86

$122.130

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Vyrian

USA . 1,964 parts In-Stock

1+ parts

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1,964

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 906 parts In-Stock

1+ parts

$2.346

100+ parts

-

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906

$2.346

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AZTECH Wire

Italy . 267 parts In-Stock

1+ parts

$9.307

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267

$9.307

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$119.687

100+ parts

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1k+ parts

$114.900

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2,000

$119.687

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$114.900

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Continental Prestige Electronics

USA . 742 parts In-Stock

1+ parts

$122.130

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10k+ parts

$119.687

742

$122.130

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$119.687

Corohmni

South Africa . 986 parts In-Stock

1+ parts

$122.130

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986

$122.130

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Advanced Electronics

New Zealand . 68 parts In-Stock

1+ parts

$124.573

100+ parts

$124.573

1k+ parts

$124.573

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68

$124.573

$124.573

$124.573

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Argo Parts USA

USA . 204 parts In-Stock

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204

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Overview

Discover the cutting-edge technology and reliability of the IS61VPS204836B-250B3LI by Integrated Silicon Solution, a leading manufacturer in the semiconductor industry. This CACHE SRAM memory module offers unparalleled performance and efficiency for industrial applications, thanks to its 2MX36 organization and 250 MHz clock frequency. With a 2.5V nominal supply voltage and 3-STATE output characteristics, this product provides seamless operation and optimal data storage capabilities. Upgrade your systems with this high-quality SRAM solution and experience enhanced functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability for the product, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Surface mount technology allows for easy integration onto PCBs, saving space and making the product more compact.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures reliable and consistent performance in data transmission and processing.

Nominal Supply Voltage / Vsup (V): 2.5

Stable supply voltage ensures proper functioning of the product and prevents damage from voltage fluctuations.

Maximum Clock Frequency (fCLK): 250 MHz

High clock frequency allows for fast data processing, making the product suitable for high-speed applications.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures the product can operate reliably in harsh industrial environments.

Memory IC Type: CACHE SRAM

Cache SRAM type memory provides fast access times, making the product ideal for applications requiring quick data retrieval.

Technical Specifications

SRAM IS61VPS204836B-250B3LI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

2.6 ns

Maximum Clock Frequency (fCLK):

250 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B165

JESD-609 Code:

e1

Length:

15 mm

Memory Density:

75497472 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

165

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA165,11X15,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Minimum Standby Voltage:

2.38 V

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

2.625 V

Minimum Supply Voltage (Vsup):

2.375 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

13 mm

Trade Compliance

IS61VPS204836B-250B3LI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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