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IS61WV25616EDBLL-8TLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-8TLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-8TLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. Ideal for industrial applications, it offers fast access time of 8ns and low standby current of 0.006Amp. With a compact design and common I/O type, this CMOS technology-based memory IC is suitable for various parallel data processing tasks.

Median Price

$4.100

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 400 parts In-Stock

1+ parts

$4.100

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$4.100

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Vyrian

USA . 2,611 parts In-Stock

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2,611

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 5,415 parts In-Stock

1+ parts

$4.100

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$4.018

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$4.100

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$4.018

Argo Parts USA

USA . 4,203 parts In-Stock

1+ parts

$4.100

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$4.100

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Netroflash

USA . 500 parts In-Stock

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$4.100

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$4.018

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$4.100

$4.018

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AZTECH Wire

Italy . 654 parts In-Stock

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$11.894

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654

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Overview

Unlock the power of high-quality SRAM technology with the IS61WV25616EDBLL-8TLI-TR by Integrated Silicon Solution. This versatile memory IC offers unparalleled reliability and performance in a compact package, making it ideal for industrial applications where speed and efficiency are crucial. With a wide supply voltage range and low standby current, this product delivers exceptional value to customers looking for robust memory solutions. Trust in ISS's expertise and experience in producing cutting-edge semiconductor products to elevate your projects to new heights of success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for reliable performance.

Nominal Supply Voltage / Vsup (V): 3

Optimal supply voltage for efficient operation.

Operating Mode: ASYNCHRONOUS

Allows for independent functioning without synchronized clock signal.

Maximum Operating Temperature: 85 °C

Suitable for industrial applications with high temperature requirements.

Technology: CMOS

Advanced technology ensuring low power consumption and high speed performance.

Memory IC Type: APPLICATION SPECIFIC SRAM

Designed specifically for a particular application, providing optimized performance.

Maximum Access Time: 8 ns

Fast access time for quick data retrieval.

Technical Specifications

SRAM IS61WV25616EDBLL-8TLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

8 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.41 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.4 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

IS61WV25616EDBLL-8TLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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